INA6006AC1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) 0.95 2.8 1.90 ・Small package for easy mounting. ① 0.95 FEATURE ② 1.5 0.65 0.4 0.65 It is designed with high voltage. UNIT：mm 2.8 INA6006AC1 is a silicon PNP transistor. ③ ・Complementary ： INC6006AC1 0.13 0～0.1 High voltage switching. 0.8 1.1 APPLICATION Terminal Connector ①：Base ②：Emitter ③：Collector JEITA:SC-59 JEDEC: Similar to TO-236 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT -160 V -5 V VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage -150 V I Peak collector current -200 mA Collector current -100 mA CM I C 200 PC Collector dissipation(Ta=25℃) Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ 500（*） MARKING Type Name AHE mW *Mounted on glass epoxy board(46mm×19mm×1mm) ELECTRICAL CHARACTERISTICS （Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS MIN LIMITS TYP MAX UNIT V(BR)CBO C to B break down voltage I C=-100μA，I E=0mA -160 - - V V(BR)EBO E to B break down voltage I E=-10μA，I C=0mA -5 - - V C to E break down voltage I C=-1mA，RBE=∞ Collector cut off current VCB=-120V，I E =0mA V(BR)CEO ICBO IEBO -150 - - V - - -100 nA Emitter cut off current VEB=-3V，I C=0mA - - -100 nA ｈＦＥ1 DC forward current gain1 VCE=-5V，I C=-1mA 45 - - - ｈＦＥ2 DC forward current gain2 VCE=-5V，I C=-10mA 90 - 270 - ｈＦＥ3 DC forward current gain3 VCE=-5V，I C=-50mA 45 - - - VCE(sat)1 C to E saturation voltage1 I C=-10mA，I B=-1mA - - -0.2 V VCE(sat)2 C to E saturation voltage2 I C=-50mA，I B=-5mA - - -0.5 V VBE(sat)1 B to E saturation voltage1 I C=-10mA，I B=-1mA - - -1.0 V VBE(sat)2 B to E saturation voltage2 I C=-50mA，I B=-5mA - - -1.0 V B to E on voltage VCE=-5V，I C=-10mA - - -0.77 V Gain bandwidth product VCE=-10V，I E=10mA 100 - 300 MHz Collector output capacitance VCB=-10V，I E=0mA，f=1MHz - 2.8 6 pF VBE(on) fT Cob ISAHAYA ELECTRONICS CORPORATION INA6006AC1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICIAL CHARACTERISTICS 300 1000 85℃ 250 DC forward current gain hFE COLLECTOR DISSIPATION Pc (mW) DC forward current gain VS. Collector current COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE 200 150 100 100 -40℃ 50 10 -0.01 0 0 50 100 -0.1 150 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （V) -100 VCE=-5V 85℃ -1 25℃ -40℃ -0.1 -0.01 -0 -0.2 -0.4 -0.6 -0.8 -10 -100 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT COMMON EMITTER TRANSFER -10 -1 Collector current IC(mA) AMBIENT TEMPERATURE Ta (℃) Collector current IC(mA) VCE=-5V 25℃ -1 -1 IC/IB=10 85℃ 25℃ -0.1 -40℃ -0.01 -0.01 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) BASE TO EMITTER VOLTAGE VBE (V) COMMON EMITTER OUTPUT -70 IC/IB=10 COLLECTOR CURRENT IC (mA) BASE TO EMITTERSATURATION VOLTAGE VBE(sat) （V) -10 BASE TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRE -40℃ -1 25℃ 85℃ Ta=25℃ -60 IB=300uA -50 IB=250uA -40 IB=200uA -30 IB=150uA -20 IB=100uA IB=50uA -10 IB=0 -0.1 -0.01 -0 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 -0 -5 -10 -15 COLLECTOR EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION -20 INA6006AC1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE Cob (pF) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT GAIN BAND WIDTH PRODUCT ｆT (MHｚ) 1000 Ta=25℃ VCE=-10V 100 10 1 0.1 1 10 100 100 Ta=25℃ f=1MHz 10 1 -0.1 -1 EMITTER CURRENT IE (ｍA) COLLECTOR INPUT CAPACITANCE Cib (pF) COLLECTOR INPUT CAPACITANCE VS. BASE TO EMITTER VOLTA 100 Ta=25℃ f=1MHz 10 1 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE VCB (V) -10 EMITTER TO BASE VOLTAGE VEB (V) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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