HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) IXFK 38N80Q2 IXFN 38N80Q2 IXFX 38N80Q2 Q2-Class = = = 800 V 38 A Ω 220 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±30 ±40 V V G ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 38 150 38 A A A TO-264 AA (IXFK) EAR EAS TC = 25°C TC = 25°C 75 4.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD Maximum Ratings TC = 25°C 735 °C °C °C TL 1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300 °C VISOL 50/60Hz, RMS t =1 min IISOL < 1mA t = 1s SOT-227B V~ V~ Md Mounting torque Terminal torque TO-264 SOT-227B FC Mounting force PLUS-247 Weight 2500 3000 0.9/8 Nm/lb.in. 1.5/13 Nm/ib.in. 22...130/5...30 PLUS247 TO-264 SOT-227B G Test Conditions VDSS VGS = 0 V, ID = 3mA 800 VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C TJ = 125°C g 10 30 D * Either Source terminal can be used as main or Kelvin source terminal G = Gate S = Source g g Features z z V z 4.5 V z ±200 nA 50 2 µA mA 220 mΩ S* S* z D = Drain TAB = Drain Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier miniBLOC package version with Aluminum Nitrate isolation Advantages z z z © 2004 IXYS All rights reserved D (TAB) S G N/lb Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS(th) D miniBLOC, SOT-227 B (IXFN) E153432 z Symbol D (TAB) D W -55 ... +150 150 -55 ... +150 TJ TJM Tstg PLUS 247TM (IXFX) Easy to mount Space savings High power density DS99150A(09/04) IXFK 38N80Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 25 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 37 S 8340 pF 890 pF 175 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 ns td(off) RG = 1.0 Ω (External), 60 ns 12 ns 190 nC 44 nC 88 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.17 TO-264 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 38 A Repetitive; pulse width limited by TJM 150 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns t rr QRM IRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1 10 IXFN 38N80Q2 IXFX 38N80Q2 PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline µC A SOT-227B miniBLOC Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXFK 38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 40 VGS = 10V 7V 35 8V 7V 70 6V I D - Amperes I D - Amperes VGS = 10V 80 30 25 20 5.5V 15 10 60 6V 50 40 30 5.5V 20 5V 5 5V 10 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 15 18 V D S - Volts 21 24 27 30 3.1 VGS = 10V 7V 6V VGS = 10V 2.8 R D S ( o n ) - Normalized 35 30 I D - Amperes 12 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 40 5.5V 25 20 5V 15 10 5 2.5 2.2 1.9 I D = 38A 1.6 I D = 19A 1.3 1 0.7 0.4 0 0 2 4 6 8 10 12 V D S - Volts 14 16 18 -50 20 25 50 75 100 125 150 45 VGS = 10V 2.6 0 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.8 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 40 TJ = 125ºC 2.4 35 2.2 I D - Amperes R D S ( o n ) - Normalized IXFN 38N80Q2 IXFX 38N80Q2 2 1.8 1.6 1.4 TJ = 25ºC 30 25 20 15 10 1.2 5 1 0.8 0 0 10 20 30 40 50 I D - Amperes © 2004 IXYS All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 38N80Q2 Fig. 8. Transconductance Fig. 7. Input Adm ittance 50 70 45 60 TJ = -40ºC 25ºC 125ºC 50 35 g f s - Siemens I D - Amperes 40 30 25 20 TJ = 125ºC 25ºC -40ºC 15 10 40 30 20 10 5 0 0 3.5 4 4.5 V 5 GS 5.5 6 0 20 30 40 50 60 I D - Amperes Fig. 10. Gate Charge 10 120 9 100 VG S - Volts 80 60 TJ = 125ºC 40 10 - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage I S - Amperes IXFN 38N80Q2 IXFX 38N80Q2 VDS = 400V 8 I D = 19A 7 I G = 10mA 6 5 4 3 TJ = 25ºC 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 1.3 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 TJ = 150ºC C iss TC = 25ºC 25µs I D - Amperes Capacitance - picoFarads 20 C oss 1000 100 R DS(on) Limit 100µs 1ms 10ms 10 DC C rss f = 1MHz 100 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFK 38N80Q2 IXFN 38N80Q2 IXFX 38N80Q2 F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.18 0.16 R( t h ) J C - ºC / W 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000