Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 60 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 150 A (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 500 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE(sat) g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) 10 6 5.0 V 300 5 µA mA VCE = 0 V, VGE = ±20 V ±100 nA IC = 50 A, VGE = 15 V Note 1 1.8 © 2003 IXYS All rights reserved 3.0 TJ = 125°C V = 600 V = 75 A < 1.8 V = 100 ns TO-264 AA (IXGK) G (TAB) C E PLUS247 (IXGX) (TAB) G = Gate E = Emitter C = Collector Tab = Collector Features • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw DS99114(11/03) IXGK 60N60B2D1 IXGX 60N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 58 S 3900 340 pF pF Cres 100 pF Qg Qge 170 25 nC nC 57 nC gfs Cies Coes IC = 50 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Dim. Inductive load, TJ = 25°°C 28 ns 30 ns IC = 50 A, VGE = 15 V 160 270 ns VCE = 400 V, RG = Roff = 3.3 Ω 100 170 ns Eoff 1.0 2.5 mJ td(on) tri Eon td(off) tfi Eoff 28 36 1.5 310 240 2.8 ns ns mJ ns ns mJ 0.15 0.25 K/W K/W Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω RthJC RthCK Reverse Diode (FRED) Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V t rr TO-264 AA Outline TJ = 150°C RthJC 35 2.1 1.4 V V 8.3 A ns 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGK 60N60B2D1 IXGX 60N60B2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 350 100 VGE = 15V 13V 11V 90 80 9V 300 11V 250 60 I C - Amperes 70 I C - Amperes VGE = 15V 13V 7V 50 40 30 9V 200 150 7V 100 20 10 50 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C VGE = 15V 13V 11V 90 I C - Amperes 80 4 5 6 V C E - Volts 7 8 V GE = 15V 1.3 7V 60 50 40 30 20 I C = 100A 1.2 1.1 I C = 50A 1.0 0.9 0.8 0.7 5V 10 3 1.4 9V 70 2 Fig. 4. Dependence of V CE(sat) on Tem perature V C E (sat)- Normalized 100 1 0 I C = 25A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 0 V CE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 300 3.7 TJ = 25ºC 3.4 250 I C = 100A 50A 25A 2.8 2.5 I C - Amperes VC E - Volts 3.1 2.2 200 150 100 1.9 TJ = 125ºC -40ºC 50 TJ = 25ºC 1.6 0 1.3 5 6 7 8 9 10 11 12 V G E - Volts © 2003 IXYS All rights reserved 13 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGK 60N60B2D1 IXGX 60N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 100 10 90 9 TJ = -40ºC 25ºC 125ºC g f s - Siemens 70 8 E off - milliJoules 80 TJ = 125ºC VGE = 15V VCE = 400V 60 50 40 30 I C = 100A 7 6 5 4 20 3 10 2 0 I C = 50A I C = 25A 1 0 50 100 150 200 250 300 0 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 10 15 20 25 30 R G - Ohms 35 40 45 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature 7 7 R G = 3.3Ω VGE = 15V VCE = 400V 6 5 4 R G = 3.3Ω VGE = 15V VCE = 400V 6 E off - milliJoules E off - MilliJoules 5 TJ = 125ºC 3 2 1 TJ = 25ºC 5 I C = 100A 4 3 I C = 50A 2 1 I C = 25A 0 0 20 30 40 50 60 70 80 90 100 25 35 I C - Amperes 55 65 75 85 400 Switching Time - nanosecond td(off) tfi - - - - - - 1000 TJ = 125ºC VGE = 15V VCE = 400V 900 800 700 600 I C = 25A 500 I C = 50A 400 I C = 100A 300 105 115 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 1200 1100 95 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Switching Time - nanosecond 45 200 td(off) tfi - - - - - - 350 R G = 3.3Ω VGE = 15V VCE = 400V 300 TJ = 125ºC 250 200 150 TJ = 25ºC 100 50 0 5 10 15 20 25 30 35 40 45 50 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 20 30 40 50 60 70 I C - Amperes 80 90 100 IXGK 60N60B2D1 IXGX 60N60B2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) tfi - - - - - - 300 I C = 25A 50A 100A R G = 3.3Ω VGE = 15V VCE = 400V 250 200 150 I C = 100A 50A 25A 100 VCE = 300V I C = 50A I G = 10mA 12 VG E - Volts Switching Time - nanosecond 350 9 6 3 50 0 25 35 45 55 65 75 85 95 105 115 125 0 20 TJ - Degrees Centigrade 40 60 80 100 120 140 160 180 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance 0.275 0.25 R (th) J C - (ºC/W) 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXGK 60N60B2D1 IXGX 60N60B2D1 4000 160 A 140 IF nC 120 3000 TVJ= 25°C 100 Qr 2000 TVJ= 100°C VR = 300V A 60 IF=120A IF= 60A IF= 30A TVJ=100°C 80 80 TVJ= 100°C VR = 300V IRM IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 1000 40 20 20 0 0 1 2 0 100 V A/µs 1000 -diF/dt VF Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 2.0 140 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 120 1.0 110 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 19. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs 1.2 VFR tfr IF=120A IF= 60A IF= 30A IRM 0 10 0.8 5 0.4 tfr 100 0.5 0.0 Qr 0 40 90 80 120 °C 160 80 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ Fig. 21. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 0 TVJ= 100°C IF = 60A DSEP 2x61-06A 0.0001 0.001 0.01 0.1 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. s t 1 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399