IXBV22N300S - IXYS Corporation

Advance Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Symbol
IXBV22N300S
Test Conditions
VCES = 3000V
IC110 = 22A
VCE(sat)  2.7V
PLUS220SMDHV
Maximum Ratings
VCES
TJ
= 25°C to 150°C
3000
V
VCGR
TJ
= 25°C to 150°C, RGE = 1M
3000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
G
E
C (Tab)
IC25
TC
= 25°C
60
A
IC110
TC
= 110°C
22
A
ICM
TC
= 25°C, 1ms
190
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 15
Clamped Inductive Load
ICM = 180
VCES  1500
A
V
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 52, VCE = 1500V, Non-Repetitive
10
μs
PC
TC
290
W
-55 ... +150
°C

TJM
150
°C

Tstg
-55 ... +150
°C

300
260
°C
°C
4
g
= 25°C
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Weight
G = Gate
E = Emitter
Features


IC
= 250μA, VGE = 0V
3000
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC
= 22A, VGE = 15V, Note 1
2.2
TJ = 125°C
© 2014 IXYS CORPORATION, All Rights Reserved

V
TJ = 125°C
2.7
Low Gate Drive Requirement
High Power Density
Applications
Characteristic Values
Min.
Typ.
Max.
BV CES
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages

Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
C
= Collector
Tab = Collector
5.0
V
25
1
μA
mA
±100
nA
2.7
V




Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
V
DS100612(5/14)
1
IXBV22N300S
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfS
13
IC = 22A, VCE = 10V, Note 1
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
C res
Qg
Qge
IC = 22A, VGE = 15V, VCE = 1500V
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 22A, VGE = 15V
VCE = 960V, RG = 15
Resistive Switching Times, TJ = 125°C
IC = 22A, VGE = 15V
VCE = 960V, RG = 15
PLUS220SMDHV (IXBV_S) Outline
22
S
2200
pF
85
pF
30
pF
110
nC
13
nC
45
nC
46
ns
360
ns
205
ns
1820
ns
43
ns
700
ns
220
ns
1650
ns
RthJC
1 - Gate
2,4 - Collector
3 - Emitter
0.43 °C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
VF
IF = 22A, VGE = 0V, Note 1
trr
IF = 11A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
Note:
2.7
VR = 100V, VGE = 0V
V
1.4
μs
30
A
21
μC
1. Pulse test, t  300μs, duty cycle, d  2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBV22N300S
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
44
VGE = 25V
15V
11V
40
36
32
15V
200
13V
9V
28
I C - Amperes
I C - Amperes
VGE = 25V
21V
19V
17V
250
24
20
7V
16
150
11V
100
12
9V
8
50
4
5V
7V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
44
1.8
VGE = 25V
19V
15V
13V
11V
I C - Amperes
32
30
VGE = 15V
1.6
9V
VCE(sat) - Normalized
36
25
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
20
VCE - Volts
VCE - Volts
28
24
7V
20
16
12
8
I C = 44A
1.4
1.2
I C = 22A
1.0
I C = 11A
0.8
4
5V
0
0.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
70
TJ = 25ºC
60
5
I C - Amperes
VCE - Volts
50
4
I C = 44A
3
22A
40
30
20
TJ =125ºC
25ºC
2
10
11A
- 40ºC
0
1
6
7
8
9
10
11
12
13
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
14
15
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
8.0
8.5
9.0
IXBV22N300S
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
32
TJ = - 40ºC
28
VCE = 1500V
14
24
I C = 22A
I G = 10mA
12
20
VGE - Volts
g f s - Siemens
25ºC
125ºC
16
12
10
8
6
8
4
4
2
0
0
10
20
30
40
50
60
0
70
0
10
20
30
I C - Amperes
50
60
70
80
90
100
110
QG - NanoCoulombs
Fig. 10. Capacitance
Fig. 9. Forward Voltage Drop of Intrinsic Diode
70
10,000
f = 1 MHz
TJ = 25ºC
125ºC
Capacitance - PicoFarads
J
60
50
I F - Amperes
40
40
30
VGE = 0V
20
Cies
1,000
Coes
100
VGE = 15V
10
Cres
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
10
5.5
0
5
10
15
VF - Volts
20
25
30
35
40
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
200
180
160
0.1
Z(th)JC - ºC / W
I C - Amperes
140
120
100
80
60
0.01
TJ = 125ºC
40
RG = 15Ω
dv / dt < 10V / ns
20
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXBV22N300S
Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC
Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC
1000
1000
VCE(sat) Limit
VCE(sat) Limit
100
10
I C - Amperes
I C - Amperes
100
25µs
100µs
1
10
25µs
100µs
1
1ms
1ms
10ms
0.1
TJ = 150ºC
0.1
TC = 25ºC
DC
Single Pulse
TJ = 150ºC
10ms
TC = 75ºC
100ms
Single Pulse
DC
0.01
100ms
0.01
1
10
100
1,000
VCE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
10,000
1
10
100
1,000
10,000
VCE - Volts
IXYS REF: B_22N300(5P) 03-10-14-A