Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE(sat) 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V G E C (Tab) IC25 TC = 25°C 60 A IC110 TC = 110°C 22 A ICM TC = 25°C, 1ms 190 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load ICM = 180 VCES 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC 290 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 4 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Weight G = Gate E = Emitter Features IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 22A, VGE = 15V, Note 1 2.2 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved V TJ = 125°C 2.7 Low Gate Drive Requirement High Power Density Applications Characteristic Values Min. Typ. Max. BV CES High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C = Collector Tab = Collector 5.0 V 25 1 μA mA ±100 nA 2.7 V Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100612(5/14) 1 IXBV22N300S Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 13 IC = 22A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz C res Qg Qge IC = 22A, VGE = 15V, VCE = 1500V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 22A, VGE = 15V VCE = 960V, RG = 15 Resistive Switching Times, TJ = 125°C IC = 22A, VGE = 15V VCE = 960V, RG = 15 PLUS220SMDHV (IXBV_S) Outline 22 S 2200 pF 85 pF 30 pF 110 nC 13 nC 45 nC 46 ns 360 ns 205 ns 1820 ns 43 ns 700 ns 220 ns 1650 ns RthJC 1 - Gate 2,4 - Collector 3 - Emitter 0.43 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 22A, VGE = 0V, Note 1 trr IF = 11A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Note: 2.7 VR = 100V, VGE = 0V V 1.4 μs 30 A 21 μC 1. Pulse test, t 300μs, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBV22N300S Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 44 VGE = 25V 15V 11V 40 36 32 15V 200 13V 9V 28 I C - Amperes I C - Amperes VGE = 25V 21V 19V 17V 250 24 20 7V 16 150 11V 100 12 9V 8 50 4 5V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 44 1.8 VGE = 25V 19V 15V 13V 11V I C - Amperes 32 30 VGE = 15V 1.6 9V VCE(sat) - Normalized 36 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 40 20 VCE - Volts VCE - Volts 28 24 7V 20 16 12 8 I C = 44A 1.4 1.2 I C = 22A 1.0 I C = 11A 0.8 4 5V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 70 TJ = 25ºC 60 5 I C - Amperes VCE - Volts 50 4 I C = 44A 3 22A 40 30 20 TJ =125ºC 25ºC 2 10 11A - 40ºC 0 1 6 7 8 9 10 11 12 13 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBV22N300S Fig. 8. Gate Charge Fig. 7. Transconductance 16 32 TJ = - 40ºC 28 VCE = 1500V 14 24 I C = 22A I G = 10mA 12 20 VGE - Volts g f s - Siemens 25ºC 125ºC 16 12 10 8 6 8 4 4 2 0 0 10 20 30 40 50 60 0 70 0 10 20 30 I C - Amperes 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 70 10,000 f = 1 MHz TJ = 25ºC 125ºC Capacitance - PicoFarads J 60 50 I F - Amperes 40 40 30 VGE = 0V 20 Cies 1,000 Coes 100 VGE = 15V 10 Cres 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 10 5.5 0 5 10 15 VF - Volts 20 25 30 35 40 VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 200 180 160 0.1 Z(th)JC - ºC / W I C - Amperes 140 120 100 80 60 0.01 TJ = 125ºC 40 RG = 15Ω dv / dt < 10V / ns 20 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBV22N300S Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 10 I C - Amperes I C - Amperes 100 25µs 100µs 1 10 25µs 100µs 1 1ms 1ms 10ms 0.1 TJ = 150ºC 0.1 TC = 25ºC DC Single Pulse TJ = 150ºC 10ms TC = 75ºC 100ms Single Pulse DC 0.01 100ms 0.01 1 10 100 1,000 VCE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 10,000 1 10 100 1,000 10,000 VCE - Volts IXYS REF: B_22N300(5P) 03-10-14-A