PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P = 500 V = 16 A ≤ 400 mΩ Ω VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 16 48 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 16 25 750 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 TO-3P (TO-220, TO-3P) VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V TO-220 (IXTP) G TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % V ±10 nA 5 100 μA μA D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z © 2006 IXYS All rights reserved (TAB) G z 400 mΩ D S TO-3P (IXTQ) z 5.5 S (TAB) g g g Characteristic Values Min. Typ. Max. BVDSS RDS(on) G 1.13/10 Nm/lb.in. 4 3 5.5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) TO-263 (IXTA) Easy to mount Space savings High power density DS99323E(03/06) IXTA 16N50P IXTP 16N50P IXTQ 16N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 9 16 S 2250 pF 240 pF Crss 12 pF td(on) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 28 ns td(off) RG = 10 Ω (External) 70 ns 25 ns 43 nC 15 nC 12 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.42 °C/W RthJC RthCS RthCS TO-263 (IXTA) Outline (TO-220) (TO-3P) Source-Drain Diode °C/W °C/W 0.25 0.21 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 16 A ISM Repetitive 48 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 16 A -di/dt = 100 A/μs 400 TO-220 (IXTP) Outline ns TO-3P Outline Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 16N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 20 20 V GS = 10V 8V 7V 18 16 16 14 I D - Amperes I D - Amperes V GS = 10V 8V 7V 18 14 12 10 8 12 10 6V 8 6 6 6V 4 4 2 2 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 6 8 Fig. 3. R DS(on) Normalized to ID = 8A v s. Junction Temperature 12 14 16 18 20 Fig. 4. R DS(on) Normalized to ID = 8A v s. Drain Current 3.1 2.8 V GS = 10V 2.8 V GS = 10V 2.6 2.4 R DS(on) - Normalized 2.5 R DS(on) - Normalized 10 V DS - Volts V DS - Volts 2.2 I D = 16A 1.9 1.6 I D = 8A 1.3 TJ = 125ºC 2.2 2 1.8 1.6 1.4 TJ = 25ºC 1 1.2 0.7 1 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 I D - Amperes T J - Degrees Centigrade Fig. 5. Maximum Drain Current v s. Case Temperature Fig. 6. Input Admittance 18 20 16 18 16 14 14 12 I D - Amperes I D - Amperes IXTP 16N50P IXTQ 16N50P 10 8 6 TJ = 125ºC 25ºC - 40ºC 12 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 T J - Degrees Centigrade © 2006 IXYS All rights reserved 100 125 150 4 4.5 5 5.5 V GS - Volts 6 6.5 7 IXTA 16N50P IXTP 16N50P IXTQ 16N50P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 70 26 24 60 22 20 50 TJ = - 40ºC 25ºC 125ºC 16 14 I S - Amperes g f s - Siemens 18 12 10 40 30 8 TJ = 125ºC 20 6 4 TJ = 25ºC 10 2 0 0 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1 1.1 1.2 35 40 V SD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 V DS = 250V 9 f = 1 MHz 8 Capacitance - PicoFarads I D = 8A I G = 10mA V GS - Volts C iss 1,000 7 6 5 4 3 C oss 100 10 2 C rss 1 1 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 V DS - Volts Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Forward-Bias Safe Operating Area 1.00 100 R (th)JC - ºC / W I D - Amperes RDS(on) Limit 25µs 10 100µs 1ms 0.10 10m TJ = 150ºC DC TC = 25ºC 1 10 100 1000 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10