SEMICONDUCTOR KDV302E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance C E 1 A High Capacitance Ratio B CATHODE MARK FEATURES 2 MAXIMUM RATING (Ta=25 ) D F CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 32 V Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range DIM A B C D E F 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. CATHODE ESC Marking Type Name V5 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL IR Reverse Current Capacitance Capacitance Ratio Series Resistance TEST CONDITION VR=32V MIN. TYP. MAX. UNIT - - 10 nA C1V VR=1V, f=1MHz 56.0 - 62.0 pF C2V VR=2V, f=1MHz - 46.0 - pF C25V VR=25V, f=1MHz - 2.85 - pF C28V VR=28V, f=1MHz 2.45 - 2.80 pF C1V/C28V - 21.6 22.4 - - C1V/C2V - 1.25 - - - C25V/C28V - 1.07 1.08 - - - - 1.15 rs VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=1~28V) 2008. 5. 8 Revision No : 0 1/2 KDV302E rS - V R 1.2 100 Ta=25 C f=1MHz SERIES RESISTANCE rS (Ω) TOTAL CAPACITANCE CT (pF) CT - V R 10 1 Ta=25 C f=470MHz 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (pA) IR - V R 100 Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2008. 5. 8 Revision No : 0 2/2