DP500P Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500P • Switching Application Ordering Information Type NO. Marking DP500P P5□ Package Code SOT-223 : monthly code Outline Dimensions unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-7003-003 1 DP500P Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VC B O -15 V Collector-Emitter voltage VC E O -12 V Emitter-Base voltage VE B O -5 V Collector current IC -1 A Collector dissipation PC 1.1 W Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics (Ta=25° C) Characteristic Symbol Collector-Base breakdown voltage BVCBO Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Min. Typ. Max. Unit IC =-50µA, IE=0 -15 - - V BVCEO IC =-1mA, IB=0 -12 - - V BVEBO IE=-50µA, IC =0 -5 - - V Collector cut-off current ICBO VCB=-12V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC =0 - - -0.1 µA h FE1 VCE=-2V, IC =-500mA 160 - 320 - h FE2 VCE=-2V, IC =-3A 40 - - - DC current gain Test Condition Collector-Emitter on voltage VCE(sat1) IC =-3A, IB=-150mA - - -0.5 V Base-Emitter on voltage VBE(sat) IC =-3A, IB=-150mA - - -1.2 V fT VCB=-5V, IC =-500mA - 150 - MHz VCB=-10V, IE=0, f=1MHz - - 50 pF Transition frequency Collector output capacitance C ob KST-7003-003 2 DP500P Electrical Characteristic Curves Fig. 2 Ic - VB E Fig. 1 Pc - Ta Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-7003-003 3