AGILENT ATF

2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
Description
• High Output Power:
18.0␣ dBm Typical P 1 dB at 12␣ GHz
The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
• High Gain:
9.0 dB Typical GSS at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
7.0
GSS
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA
f = 12.0 GHz
dB
NFO
GA
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA
Gain @ NFO: VDS = 3 V, IDS = 10 mA
f = 12.0 GHz
f = 12.0 GHz
dB
dB
P1 dB
Power Output @ 1 dB Gain Compression:
VDS = 5 V, IDS = 30 mA
f = 12.0 GHz dBm
gm
Transconductance: VDS = 3 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
Typ. Max.
9.0
2.2
6.0
15.0
18.0
mmho
15
35
mA
30
50
90
V
-3.5
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-67
5965-8704E
ATF-26836 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Absolute
Maximum[1]
+7
-4
-8
IDSS
275
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
θjc = 350°C/W; TCH = 150°C
1␣ µm Spot Size[5]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-26836-TR1
ATF-26836-STR
1000
10
7"
strip
ATF-26836 Typical Performance, TA = 25°C
25
25
20
20
MSG
15
GAIN (dB)
GAIN (dB)
MSG
10
5
0
2.0
|S21|2
4.0
15
10
MAG
|S21|2
5
6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.
0
2.0
4.0
6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.
5-68
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE >79°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 10 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S11
Mag.
.94
.90
.84
.75
.64
.52
.49
.52
.56
.61
.67
.69
.72
.72
.72
Ang.
-38
-55
-72
-92
-117
-155
163
126
100
78
58
45
35
22
13
dB
8.2
7.8
7.6
8.0
8.1
8.3
7.9
7.2
6.4
5.6
4.7
3.9
3.0
2.5
2.0
S21
Mag.
2.57
2.45
2.41
2.50
2.55
2.60
2.47
2.30
2.10
1.91
1.71
1.57
1.42
1.33
1.26
Ang.
138
120
102
82
61
37
14
-7
-28
-47
-66
-83
-98
-115
-128
dB
-27.1
-24.9
-22.9
-20.6
-19.3
-18.1
-17.5
-16.9
-16.8
-17.1
-17.1
-17.3
-17.2
-17.2
-17.4
S12
Mag.
.044
.057
.072
.093
.109
.124
.133
.143
.144
.140
.139
.137
.138
.138
.135
S22
Ang.
60
51
44
30
15
5
-12
-21
-32
-41
-49
-61
-66
-77
-85
Mag.
.74
.71
.71
.66
.60
.51
.41
.30
.24
.18
.15
.17
.19
.23
.27
Ang.
-26
-35
-44
-53
-64
-78
-92
-106
-125
-154
168
134
107
89
71
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 30 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
S11
Mag.
.94
.86
.78
.68
.57
.43
.37
.40
.47
.55
.61
.71
.71
.65
.58
Ang.
-44
-63
-81
-97
-118
-151
165
122
96
75
53
33
10
-10
-30
dB
9.0
8.5
8.0
7.9
8.1
8.5
8.5
8.0
7.7
7.5
7.4
7.4
6.7
5.7
4.2
S21
Mag.
2.82
2.65
2.51
2.49
2.53
2.65
2.66
2.52
2.42
2.37
2.35
2.34
2.17
1.93
1.62
Ang.
130
110
89
71
51
28
3
-20
-42
-66
-88
-116
-143
-170
166
A model for this device is available in the DEVICE MODELS section.
5-69
dB
-30.2
-28.4
-26.9
-25.5
-24.4
-22.4
-20.6
-18.0
-16.4
-15.1
-13.8
-13.2
-13.5
-14.0
-14.9
S12
Mag.
.031
.038
.045
.053
.060
.076
.093
.126
.152
.176
.205
.220
.212
.200
.180
S22
Ang.
65
56
47
41
39
38
30
15
3
-4
-19
-39
-56
-72
-93
Mag.
.80
.80
.79
.78
.76
.73
.69
.64
.66
.63
.64
.71
.78
.85
.98
Ang.
-31
-43
-52
-58
-67
-80
-99
-119
-140
-166
168
132
104
79
61
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
268
DRAIN
3
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-70