AGILENT ATF-13100-GP3

2–18 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13100
Features
• Low Noise Figure:
1.1 dB Typical at 12 GHz
• High Associated Gain:
9.5 dB Typical at 12 GHz
• High Output Power:
17.5 dBm Typical P1 dB at 12 GHz
Description
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applications in the 2-18␣ GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Chip Outline
D
S
The recommended mounting
procedure is to die attach at a
stage temperature of 300°C using
a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
“Chip Use” in the APPLICATIONS
section.
S
G
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
P1 dB
Parameters and Test Conditions[1]
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
Gain @ NFO; VDS = 2.5 V, IDS = 20 mA
G1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
IDSS
Saturated Drain Current; VDS = 2.5 V, VGS = 0 V
VP
Pinchoff Voltage: VDS = 2.5 V, IDS = 1 mA
Units
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
dB
dB
dB
dB
dB
dB
Min.
9.0
Typ. Max.
0.8
1.1
1.5
12.0
9.5
8.0
f = 12.0 GHz dBm
17.5
f = 12.0 GHz
8.5
dB
1.2
mmho
30
55
mA
40
50
90
V
-3.0
-1.5
-0.8
Note:
1. RF performance is determined by assembling and testing 10 samples per wafer.
5-33
5965-8694E
ATF-13100 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 4 mW/°C for
TMOUNTING SURFACE > 119°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
θjc = 250°C/W; TCH = 150°C
1 µm Spot Size[4]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-13100-GP3
50
ATF-13100 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
4.0
6.0
8.0
12.0
16.0
0.4
0.7
0.8
1.1
1.5
0.60
0.32
0.25
0.23
0.32
30
68
102
-165
-112
0.32
0.21
0.15
0.09
0.21
ATF-13100 Typical Performance, TA = 25°C
12
20
10
GA
1.5
15
GA
0.5
0
2.0
10
NFO
5
4.0
0
6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
4.0
NFO (dB)
1.0
GA (dB)
NFO (dB)
8
6
3.0
NFO
2.0
1.0
0
5
10
15
20
25
30
35
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
5-34
GA (dB)
2.0
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S11
Mag.
.96
.92
.85
.79
.73
.68
.63
.62
.59
.59
.57
.60
.64
.67
.73
.77
.80
Ang.
-27
-41
-58
-76
-95
-113
-132
-151
-167
173
155
136
116
98
83
72
63
dB
13.4
13.4
13.1
12.9
12.4
12.0
11.4
10.9
10.3
9.7
9.0
8.6
7.9
7.1
5.8
4.6
3.5
S21
Mag.
4.68
4.65
4.54
4.40
4.19
3.97
3.71
3.51
3.27
3.07
2.83
2.69
2.47
2.26
1.96
1.70
1.50
Ang.
153
140
126
113
100
87
75
63
53
40
30
19
7
-6
-16
-26
-35
A model for this device is available in the DEVICE MODELS section.
ATF-13100 Chip Dimensions
356 µm
14 mil
50 µm
1.97 mil
44 µm
1.73 mil
D
118 µm
4.65 mil
254 µm
10 mil
S
S
92 µm
3.62 mil
G
50 µm
1.97 mil
Note: Die thickness is 4.5 mil, and backside metallization is
200 Å Ti and 2000 Å Au.
5-35
dB
-26.9
-23.6
-21.4
-19.8
-18.7
-18.0
-17.5
-17.1
-16.8
-16.5
-16.5
-16.4
-16.4
-16.4
-16.9
-17.0
-17.4
S12
Mag.
.045
.066
.085
.102
.116
.126
.134
.140
.144
.149
.150
.151
.151
.152
.143
.141
.135
S22
Ang.
75
67
59
50
42
34
25
18
11
2
-9
-16
-25
-34
-40
-45
-48
Mag.
.55
.52
.49
.44
.38
.30
.24
.18
.13
.08
.02
.08
.15
.23
.31
.36
.40
Ang.
-16
-24
-33
-41
-48
-54
-64
-75
-84
-104
160
106
103
100
90
82
72