AGILENT ATF

0.5– 6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
Features
• Low Noise Figure:
0.9 dB Typical at 4␣ GHz
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power:
23.0␣ dBm Typical P 1 dB at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applications in the 0.5-6 GHz frequency
range.
70 mil Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
P1 dB
Parameters and Test Conditions
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
G1 dB
Power Output @ 1 dB Gain Compression:
VDS =5 V, IDS = 80 mA
1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA
gm
Transconductance: VDS =3 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
5965-8718E
5-46
Units
Min.
Typ. Max.
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
dB
dB
dB
f = 4.0 GHz
dBm
23.0
f = 4.0 GHz
dB
13.0
12.0
0.6
0.9
1.2
16.0
13.0
10.0
1.1
mmho
70
120
mA
80
120
200
V
-3.0
-1.5
-0.8
ATF-21170 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Absolute
Maximum[1]
+7
-4
-8
IDSS
600
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4 mW/°C for
TCASE > 25°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
θjc = 250°C/W; TCH = 150°C
1␣ µm Spot Size[4]
Thermal Resistance:
Liquid Crystal Measurement:
18
ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA
NFO
dB
12
Ang
RN/50
2.0
Mag
0.5
1.0
2.0
4.0
8.0
0.4
0.5
0.6
0.9
1.2
.93
.85
.70
.59
.54
17
35
70
148
-177
.90
.70
.46
.14
.09
1.5
9
NFO (dB)
Freq.
GHz
GA (dB)
Γopt
15
GA
6
1.0
NFO
0.5
0
1.0
2.0
4.0
6.0 8.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
ATF-21170 Typical Performance, TA = 25°C
16
10
NFO (dB)
1.5
30
25
20
MSG
MSG
20
15
MAG
10
|S21|2
5
0
10
20
30
40
50
60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
0
0.5
MAG
|S21|2
5
0.5
0
15
10
NFO
1.0
GAIN (dB)
12
GAIN (dB)
GA
GA (dB)
14
25
1.0
2.0
4.0 6.0 8.0 10.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
5-47
0
0.5
1.0
2.0
4.0 6.0 8.0 10.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Mag.
.96
.91
.82
.74
.70
.65
.64
.65
.66
.66
.67
S11
Ang.
-31
-55
-95
-123
-147
-170
167
146
126
107
87
dB
15.5
14.2
12.1
10.2
8.8
7.3
6.3
5.4
4.5
3.4
2.2
S21
Mag.
5.93
5.14
4.05
3.23
2.74
2.33
2.07
1.86
1.67
1.48
1.29
Ang.
157
137
106
82
61
41
22
4
-13
-30
-47
dB
-29.4
-24.3
-20.4
-19.5
-18.7
-18.2
-17.7
-17.5
-17.0
-16.6
-16.2
S12
Mag.
.034
.061
.096
.106
.116
.123
.131
.134
.141
.148
.155
S22
Ang.
72
56
36
21
9
-1
-10
-17
-28
-39
-50
Mag.
.46
.42
.39
.35
.33
.30
.29
.26
.26
.26
.25
Ang.
-23
-42
-70
-91
-109
-127
-145
-167
164
140
114
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 80 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Mag.
.95
.89
.78
.69
.64
.60
.61
.61
.63
.64
.64
S11
Ang.
-43
-64
-106
-133
-160
175
154
136
120
102
86
dB
18.3
17.4
14.6
12.4
10.7
9.1
7.9
6.9
6.2
5.3
4.5
S21
Mag.
8.24
7.28
5.36
4.18
3.42
2.85
2.47
2.22
2.05
1.85
1.68
Ang.
149
133
101
79
56
37
18
2
-14
-32
-48
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
3
1
2
SOURCE
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
5-48
dB
-32.4
-29.9
-25.2
-23.4
-22.7
-21.7
-20.4
-19.3
-17.9
-16.6
-15.3
S12
Mag.
.024
.032
.055
.068
.073
.082
.095
.108
.127
.148
.172
S22
Ang.
67
59
44
34
31
24
19
12
7
0
-13
Mag.
.49
.46
.40
.38
.36
.35
.33
.31
.27
.27
.29
Ang.
-17
-26
-45
-60
-81
-100
-115
-132
-152
-179
165