0.5– 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4␣ GHz • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz • High Output Power: 23.0␣ dBm Typical P 1 dB at 4␣ GHz • Hermetic Gold-Ceramic Microstrip Package Description The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. 70 mil Package This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25°C Symbol NFO GA P1 dB Parameters and Test Conditions Optimum Noise Figure: VDS = 3 V, IDS = 20 mA Gain @ NFO: VDS = 3 V, IDS = 20 mA G1 dB Power Output @ 1 dB Gain Compression: VDS =5 V, IDS = 80 mA 1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA gm Transconductance: VDS =3 V, VGS = 0 V IDSS Saturated Drain Current: VDS = 3 V, VGS = 0 V VP Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 5965-8718E 5-46 Units Min. Typ. Max. f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz dB dB dB dB dB dB f = 4.0 GHz dBm 23.0 f = 4.0 GHz dB 13.0 12.0 0.6 0.9 1.2 16.0 13.0 10.0 1.1 mmho 70 120 mA 80 120 200 V -3.0 -1.5 -0.8 ATF-21170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Absolute Maximum[1] +7 -4 -8 IDSS 600 175 -65 to +175 Units V V V mA mW °C °C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 4 mW/°C for TCASE > 25°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. θjc = 250°C/W; TCH = 150°C 1␣ µm Spot Size[4] Thermal Resistance: Liquid Crystal Measurement: 18 ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA NFO dB 12 Ang RN/50 2.0 Mag 0.5 1.0 2.0 4.0 8.0 0.4 0.5 0.6 0.9 1.2 .93 .85 .70 .59 .54 17 35 70 148 -177 .90 .70 .46 .14 .09 1.5 9 NFO (dB) Freq. GHz GA (dB) Γopt 15 GA 6 1.0 NFO 0.5 0 1.0 2.0 4.0 6.0 8.0 FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 3V, IDS = 20 mA, TA = 25°C. ATF-21170 Typical Performance, TA = 25°C 16 10 NFO (dB) 1.5 30 25 20 MSG MSG 20 15 MAG 10 |S21|2 5 0 10 20 30 40 50 60 IDS (mA) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 3V, f = 4.0 GHz. 0 0.5 MAG |S21|2 5 0.5 0 15 10 NFO 1.0 GAIN (dB) 12 GAIN (dB) GA GA (dB) 14 25 1.0 2.0 4.0 6.0 8.0 10.0 FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. 5-47 0 0.5 1.0 2.0 4.0 6.0 8.0 10.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 80 mA. Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 3 V, IDS␣ =␣ 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Mag. .96 .91 .82 .74 .70 .65 .64 .65 .66 .66 .67 S11 Ang. -31 -55 -95 -123 -147 -170 167 146 126 107 87 dB 15.5 14.2 12.1 10.2 8.8 7.3 6.3 5.4 4.5 3.4 2.2 S21 Mag. 5.93 5.14 4.05 3.23 2.74 2.33 2.07 1.86 1.67 1.48 1.29 Ang. 157 137 106 82 61 41 22 4 -13 -30 -47 dB -29.4 -24.3 -20.4 -19.5 -18.7 -18.2 -17.7 -17.5 -17.0 -16.6 -16.2 S12 Mag. .034 .061 .096 .106 .116 .123 .131 .134 .141 .148 .155 S22 Ang. 72 56 36 21 9 -1 -10 -17 -28 -39 -50 Mag. .46 .42 .39 .35 .33 .30 .29 .26 .26 .26 .25 Ang. -23 -42 -70 -91 -109 -127 -145 -167 164 140 114 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 5 V, IDS␣ =␣ 80 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Mag. .95 .89 .78 .69 .64 .60 .61 .61 .63 .64 .64 S11 Ang. -43 -64 -106 -133 -160 175 154 136 120 102 86 dB 18.3 17.4 14.6 12.4 10.7 9.1 7.9 6.9 6.2 5.3 4.5 S21 Mag. 8.24 7.28 5.36 4.18 3.42 2.85 2.47 2.22 2.05 1.85 1.68 Ang. 149 133 101 79 56 37 18 2 -14 -32 -48 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions .040 1.02 SOURCE 4 .020 .508 GATE DRAIN 3 1 2 SOURCE .004 ± .002 .10 ± .05 .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 5-48 dB -32.4 -29.9 -25.2 -23.4 -22.7 -21.7 -20.4 -19.3 -17.9 -16.6 -15.3 S12 Mag. .024 .032 .055 .068 .073 .082 .095 .108 .127 .148 .172 S22 Ang. 67 59 44 34 31 24 19 12 7 0 -13 Mag. .49 .46 .40 .38 .36 .35 .33 .31 .27 .27 .29 Ang. -17 -26 -45 -60 -81 -100 -115 -132 -152 -179 165