QID4515002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram DimensionsInches Millimeters DimensionsInches Millimeters A 5.51 140.0 L B 2.87 73.0 M 0.38 9.75 C 1.89 48.0 N 0.20 5.0 0.69±0.01 17.5±0.25 D 4.88±0.01124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 0.16 4.0 F 1.18 30.0 R 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V G 09/12 Rev. 9 S M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features: Low VCE(sat) Creepage and Clearance meet IEC 60077-1 High Isolation Voltage Rugged SWSOA and RRSOA Compact Industry Standard Package Applications: Traction Medium Voltage Drives High Voltage Power Supplies 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolQID4515002Units Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C) Tj -40 to 150 °C Tstg -40 to 125 °C VCES 4500Volts Collector-Emitter Voltage (VGE = 0V, Tj = -50°C) VCES 4400Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20Volts Collector Current, DC (TC = 82°C) Peak Collector Current (Pulse) IC 150Amperes ICM 300*Amperes Diode Forward Current** IF 150Amperes Diode Forward Surge Current** (Pulse) IFM 300*Amperes I2t for Diode (t = 10ms) I2t Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC Mounting Torque, M6 Terminal Screws — 44 in-lb Mounting Torque, M6 Mounting Screws — 44 in-lb — 900 Grams Module Weight (Typical) 10kA2sec 1500Watts Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0kVolts Partial Discharge Qpd 10pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc 10µs (VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICESVCE = VCES, VGE = 0V — — 1.8 mA Gate Leakage Current IGESVGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th)IC = 13.3mA, VCE = 10V 5.8 6.3 6.8 Volts Collector-Emitter Saturation Voltage VCE(sat)IC = 150A, VGE = 15V, Tj = 25°C — 3.8 — Volts IC = 150A, VGE = 15V, Tj = 125°C — 4.6 5.5 Volts Total Gate Charge QGVCC = 2800V, IC = 150A, VGE = 15V — 1.5 — µC Emitter-Collector Voltage** VECIE = 150A, VGE = 0V, Tj = 25°C — 2.8 — Volts IE = 150A, VGE = 0V, Tj = 125°C — 3.2 3.8 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 09/12 Rev. 9 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies —19—nF Output Capacitance CoesVGE = 0V, VCE = 10V, f = 100kHz — Reverse Transfer Capacitance Cres —0.55— nF Resistive Turn-on Delay Time td(on)VCC = 2800V, IC = 133A, Load Rise Time Switching Turn-off Delay Time Times Fall Time trVGE = ±15V, RG(on) = 24.3Ω, td(off)RG(off) = 90Ω, LS = 150nH tf Inductive Load 1.22 — nF — 1.00 — µs — 0.30 — µs — 3.6 — µs —0.36— µs Turn-on Switching Energy EonTj = 125°C, IC = 133A, VGE = ±15V, — 0.55 — J/P Turn-off Switching Energy EoffRG(on) = 24.3Ω, RG(off) = 90Ω, — 0.34 — J/P trrVCC = 2800V, IE = 133A, — 0.7 — µs Diode Reverse Recovery Charge** QrrVGE = ±15V, RG(on) = 24.3Ω, — 111* — µC Diode Reverse Recovery Energy ErecLS = 150nH, Inductive Load — 172 — mJ/P Stray Inductance (C1-E2) LSCE —60—nH Lead Resistance Terminal-Chip RCE —0.8—mΩ VCC = 2800V, LS = 150nH , Inductive Load Diode Reverse Recovery Time** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*** Rth(j-c) Q Per IGBT — — 0.083 °K/W Thermal Resistance, Junction to Case*** Rth(j-c) D Per FWDi — — 0.157 °K/W Contact Thermal Resistance, Case to Fin Rth(c-f) Comparative Tracking Index Per Module, —0.018—°K/W Thermal Grease Applied, λgrease = 1W/mK CTI 600 — — Clearance Distance in Air (Terminal to Base) da(t-b) 35.0— — mm Creepage Distance Along Surface ds(t-b) 64 — —mm da(t-t) 19 — —mm ds(t-t) 54 — —mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC measurement point is just under the chips. 09/12 Rev. 9 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 275 220 15 13 VGE = 16V 11 165 10 110 55 0 2 4 6 220 165 110 55 0 8 0 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) SWITCHING ENERGIES, Eon, Eoff, Erec, (J/PULSE) Tj = 25°C Tj = 125°C 1.76 1 2 3 1.32 1.10 0.88 0.66 4 0 Cies 11.1 Coes 1.11 Cres VGE = 0V Tj = 25°C f = 100 kHz 100 101 4 8 12 16 GATE CHARGE VS. VGE 20 0.11 10-1 5 10 5 0 -5 -10 -15 102 VCE = 2800V IC = 133A Tj = 25°C 15 0 0.55 1.10 1.65 2.20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (μC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.32 0.44 0.22 0 55 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) VCC = 2800V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω Ls = 150nH Tj = 125°C Inductive Load Eon Eoff Erec 1.54 110 GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 110 55 110 165 220 COLLECTOR CURRENT, IC, (AMPERES) 4 CAPACITANCE, Cies, Coes, Cres, (nF) 165 SWITCHING ENERGIES, Eon, Erec, (J/PULSE) EMITTER CURRENT, IE, (AMPERES) 220 0 165 0 8 111.0 55 220 CAPACITANCE VS. VCE (TYPICAL) 275 0 6 VCE = VGE Tj = 25°C Tj = 150°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 4 275 1.32 VCC = 2800V VGE = ±15V IC = 133A Ls = 150nH Tj = 125°C Inductive Load Eon Erec 1.10 0.88 0.66 SWITCHING ENERGIES, Eoff,, (J/PULSE) 0 275 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 275 TRANSFER CHARACTERISTICS (TYPICAL) 0.44 0.22 0 0 9 18 27 36 GATE RESISTANCE, RG, (Ω) 45 VCC = 2800V VGE = ±15V IC = 133A Ls = 150nH Tj = 125°C Inductive Load Eoff 1.10 0.88 0.66 0.44 0.22 0 0 45 90 135 180 GATE RESISTANCE, RG, (Ω) 09/12 Rev. 9 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515002 Dual IGBTMOD™ HVIGBT Module 150 Amperes/4500 Volts FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 td(off) td(on) 100 tf tr 10-1 Ls = 150nH Tj = 125°C Inductive Load 10-2 11.0 110 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) VCC ≤ 3300V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω Tj = 125°C 0 1000 2000 3000 4000 5000 COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) 09/12 Rev. 9 Tj = 125°C Inductive Load 1.1 1110 110 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 750 11.0 trr SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 1000 0 100 EMITTER CURRENT, IC, (AMPERES) 1250 250 110.0 COLLECTOR CURRENT, IC, (AMPERES) 1500 500 Irr 101 10-1 11.0 1110 1100.0 VCC = 2800V VGE = ±15V RG(on) = 24.3Ω Ls = 100 nH VCC ≤ 3200V di/dt < 660A/µs Tj = 125°C 250 188 125 63 0 0 1000 2000 3000 4000 312 250 188 125 VCC ≤ 3200V VGE = ±15V RG(off) = 90Ω Tj = 125°C 63 0 0 1000 2000 3000 4000 5000 COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS) 375 312 375 COLLECTOR CURRENT, IC, (AMPERES) VCC = 2800V VGE = ±15V RG(on) = 24.3Ω RG(off) = 90Ω REVERSE BIAS SAFE OPERATING AREA (RBSOA) REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIMES, (ns) 102 5000 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 1.2 1.0 0.8 0.6 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.083K/W (IGBT) Rth(j-c) = 0.157K/W (FWDi) 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 5