RT8223N High Efficiency, Main Power Supply Controller for Notebook Computer General Description Features The RT8223N is a dual step-down, switch-mode power supply controller generating logic-supply voltages in battery-powered systems. It includes two Pulse Width Modulation (PWM) controllers adjustable from 2V to 5.5V, and also features fixed 5V/3.3V linear regulators. Each linear regulator provides up to 100mA output current with automatic linear regulator bootstrapping to the PWM outputs. The RT8223N includes on-board power up sequencing, a power good output, internal soft-start, and soft-discharge output that prevents negative voltage during shutdown. z The constant on-time PWM scheme can operate without sense resistors and provide 100ns load transient response while maintaining nearly constant switching frequency. To eliminate noise in audio applications, an ultrasonic mode is included, which maintains the switching frequency above 25kHz. Moreover, the diode-emulation mode maximizes efficiency for light load applications. The RT8223N is available in a WQFN-24L 4x4 package. z z z z z z z z z z z z z Applications z z Ordering Information RT8223N Constant On-time Control with 100ns Load Step Response Wide Input Voltage Range : 6V to 25V Dual Adjustable Outputs from 2V to 5.5V Fixed 3.3V and 5V LDO Output : 100mA 2V Reference Voltage Frequency Selectable via TONSEL Setting 4700ppm/°°C RDS(ON) Current Sensing Programmable Current Limit Combined with Enable Control Selectable PWM, DEM, or Ultrasonic Mode Internal Soft-Start and Soft-Discharge High Efficiency up to 97% 5mW Quiescent Power Dissipation Thermal Shutdown RoHS Compliant and Halogen Free Notebook and Sub-Notebook Computers 3-Cell and 4-Cell Li+ Battery-Powered Devices Marking Information RT8223NGQW Package Type QW : WQFN-24L 4x4 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) Z : ECO (Ecological Element with Halogen Free and Pb free) Note : 11= : Product Code 11=YM DNN RT8223NZQW 11 : Product Code Richtek products are : ` RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. ` YMDNN : Date Code 11 YM DNN YMDNN : Date Code Suitable for use in SnPb or Pb-free soldering processes. DS8223N-03 April 2011 www.richtek.com 1 RT8223N Pin Configurations VOUT1 PGOOD BOOT1 UGATE1 PHASE1 LGATE1 (TOP VIEW) 24 23 22 21 20 19 ENTRIP1 FB1 REF TONSEL FB2 ENTRIP2 1 18 2 17 3 16 GND 4 15 25 5 6 14 13 8 9 10 11 12 VOUT2 VREG3 BOOT2 UGATE2 PHASE2 LGATE2 7 ENC VREG5 VIN GND SKIPSEL EN WQFN-24L 4x4 Typical Application Circuit C1 10µF C10 0.1µF R4 0 Q1 BSC119 N03S C3 220µF R5 C4 0 C2 0.1µF L1 6.8µH VOUT1 5V VIN 6V to 25V R8 3.9 RT8223N 16 VIN BOOT2 22 BOOT1 LGATE2 12 C19 0.1µF R13 10k 19 LGATE1 C15 0.22µF 2 FB1 3 REF Frequency Control 4 TONSEL PWM/DEM/Ultrasonic 14 SKIPSEL 13 EN ON OFF ON OFF www.richtek.com 2 VOUT2 7 5 FB2 ENTRIP1 1 ENTRIP2 VREF 2V Q2 BSC119 N03S 0 C11 0.1µF 18 ENC GND 6 C13 10µF C12 10µF L2 4.7µH Q4 BSC119 N03S GND 15 20 PHASE1 R12 15k R10 0 RBOOT2 PHASE2 11 24 VOUT1 C18 9 21 UGATE1 RBOOT1 Q3 BSC119 N03S UGATE2 10 VOUT2 3.3V C17 220µF R11 C14 R14 6.5k RILIM1 150k R15 10k RILIM2 150k C21 C20 0.1µF 25 (Exposed Pad) VREG5 17 PGOOD 23 VREG3 8 C9 4.7µF 5V Always On R6 100k PGOOD Indicator C16 4.7µF 3.3V Always On DS8223N-03 April 2011 RT8223N Functional Pin Description Pin No. Pin Name Pin Function Channel 1 Enable and Current Limit Setting Input. Connect a resistor to GND to set the threshold for channel 1 synchronous RDS(ON) sense. The GND − PHASE1 current limit threshold is 1/10th the voltage seen at ENTRIP1 over a 0.515V to 3V range. There is an internal 10μA current source from VREG5 to ENTRIP1. Leave ENTRIP1 floating or short ENTRIP1 to GND to shut down channel 1. SMPS1 Feedback Input. Connect FB1 to a resistive voltage divider from VOUT1 to GND to adjust output from 2V to 5.5V. 1 ENTRIP1 2 FB1 3 REF 2V Reference Output. Bypass to GND with a minimum 0.22μF capacitor. REF can source up to 100μA for external loads. Loading REF degrades FBx and output accuracy according to the REF load-regulation error. 4 TONSEL Frequency Selectable Input for VOUT1/VOUT2 respectively. 300kHz/375kHz : Connect to VREG5 or VREG3 250kHz/313kHz : Connect to REF 200kHz/250kHz : Connect to GND 5 FB2 6 ENTRIP2 7 VOUT2 8 VREG3 9 BOOT2 10 UGATE2 11 PHASE2 12 LGATE2 13 EN 14 SKIPSEL 16 VIN 17 VREG5 18 ENC 19 LGATE1 20 PHASE1 SMPS2 Feedback Input. Connect FB2 to a resistive voltage divider from VOUT2 to GND to adjust output voltage from 2V to 5.5V. Channel 2 Enable and Current Limit Setting Input. Connect a resistor to GND to set the threshold for channel 2 synchronous RDS(ON) sense. The GND − PHASE2 current limit threshold is 1/10th the voltage seen at ENTRIP2 over a 0.515V to 3V range. There is an internal 10μA current source from VREG5 to ENTRIP2. Leave ENTRIP2 floating or short ENTRIP2 to GND to shut down channel 2. Bypass Pin for SMPS2. Connect to the SMPS2 output to bypass efficient power for VREG3 pin. VOUT2 is also for the SMPS2 output soft-discharge. 3.3V Linear Regulator Output. Boost Flying Capacitor Connection for SMPS2. Connect to an external capacitor according to the typical application circuits. Upper Gate Driver Output for SMPS2. UGATE2 swings between PHASE2 and BOOT2. Switch Node for SMPS2. PHASE2 is the internal lower supply rail for the UGATE2 high side gate driver. PHASE2 is also the current-sense input for the SMPS2. Lower Gate Driver Output for SMPS2. LGATE2 swings between GND and VREG5. Master Enable Input. The REF/VREG5/VREG3 are enabled if it is within logic high level and disabled if it is less than the logic low level. Operation Mode Selectable Input. Connect to VREG5 or VREG3 : Ultrasonic Mode Connect to REF : PWM Mode Connect to GND : DEM Mode Supply Input for 5V/3.3V LDO and Feed Forward On-Time circuitry. 5V Linear Regulator Output. VREG5 is also the supply voltage for the lower gate driver and analog supply voltage for the device. SMPS Enable Input. Pull up to VREG3 or VREG5 to turn on both switch channels. Short to GND to shutdown them. Lower Gate Driver Output for SMPS1. LGATE1 swings between GND and VREG5. Switch Node for SMPS1. PHASE1 is the internal lower supply rail for the UGATE1 high side gate driver. PHASE1 is also the current-sense input for the SMPS1. To be continued DS8223N-03 April 2011 www.richtek.com 3 RT8223N Pin No. Pin Name Pin Function Upper Gate Driver Output for SMPS1. UGATE1 swings between PHASE1 and BOOT1. 21 UGATE1 22 BOOT1 Boost Flying Capacitor Connection for SMPS1. Connect to an external capacitor according to the typical application circuits. 23 PGOOD Power Good Output for Channel 1 and Channel 2. (Logical AND). 24 VOUT1 15,25 GND (Exposed Pad) Bypass Pin for SMPS1. Connect to the SMPS1 output to bypass efficient power for VREG5 pin. VOUT1 is also for the SMPS1 output soft-discharge. Ground for SMPS Controller. The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. Function Block Diagram TONSEL SKIPSEL BOOT1 BOOT2 UGATE1 UGATE2 PHASE1 VREG5 PHASE2 VREG5 LGATE1 VREG5 SMPS1 PWM Buck Controller SMPS2 PWM Buck Controller VREG5 LGATE2 10µA 10µA FB1 VOUT2 FB2 ENTRIP2 ENTRIP1 EN ENC Power-On Sequence Clear Fault Latch SW5 Threshold PGOOD SW3 Threshold GND VOUT1 Thermal Shutdown VREG3 VREG5 VREG5 REF VREG3 VIN REF www.richtek.com 4 DS8223N-03 April 2011 RT8223N Absolute Maximum Ratings (Note 1) VIN, EN to GND ------------------------------------------------------------------------------------------------PHASEx to GND DC -----------------------------------------------------------------------------------------------------------------< 20ns -----------------------------------------------------------------------------------------------------------z BOOTx to PHASEx -------------------------------------------------------------------------------------------z ENTRIPx, SKIPSEL, TONSEL, PGOOD to GND ------------------------------------------------------z VREG5, VREG3, FBx , VOUTx, ENC, REF to GND -------------------------------------------------z UGATEx to PHASEx DC -----------------------------------------------------------------------------------------------------------------< 20ns -----------------------------------------------------------------------------------------------------------z LGATEx to GND DC -----------------------------------------------------------------------------------------------------------------< 20ns -----------------------------------------------------------------------------------------------------------z Power Dissipation, PD @ TA = 25°C WQFN-24L 4x4 ------------------------------------------------------------------------------------------------z Package Thermal Resistance (Note 2) WQFN-24L 4x4, θJA -------------------------------------------------------------------------------------------WQFN-24L 4x4, θJC ------------------------------------------------------------------------------------------z Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------------z Junction Temperature -----------------------------------------------------------------------------------------z Storage Temperature Range --------------------------------------------------------------------------------z ESD Susceptibility (Note 3) HBM (Human Body Mode) ----------------------------------------------------------------------------------MM (Machine Mode) ------------------------------------------------------------------------------------------z −0.3V to 30V z Recommended Operating Conditions z z z −0.3V to 30V −8V to 38V −0.3V to 6V −0.3V to 6V −0.3V to 6V −0.3V to (VREG5 + 0.3V) −5V to 7.5V −0.3V to (VREG5 + 0.3V) −2.5V to 7.5V 1.923W 52°C/W 7°C/W 260°C 150°C −65°C to 150°C 2kV 200V (Note 4) Supply Voltage, VIN -------------------------------------------------------------------------------------------- 6V to 25V Junction Temperature Range --------------------------------------------------------------------------------- −40°C to 125°C Ambient Temperature Range --------------------------------------------------------------------------------- −40°C to 85°C DS8223N-03 April 2011 www.richtek.com 5 RT8223N Electrical Characteristics (VIN = 12V, VEN = VENC = 5V, VENTRIP1 = VENTRIP2 = 2V, No Load, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -- 200 -- μA -- 20 40 μA -- 5 7 mW 1.975 2 2.025 -- 2 -- Ultrasonic Mode -- 2.032 -- SMPS1, SMPS2 2 -- 5.5 V VOUTx = 0.5V, VENTRIPx = 0V 10 45 -- mA VOUT1 = 5.05V (200kHz) 1895 2105 2315 VOUT2 = 3.33V (250kHz) 999 1110 1221 VOUT1 = 5.05V (250kHz) 1473 1684 1895 VOUT2 = 3.33V (313kHz) 777 888 999 VOUT1 = 5.05V (300kHz) 1227 1403 1579 VOUT2 = 3.33V (375kHz) 647 740 833 VFBx = 1.9V 200 300 400 ns SKIPSEL = VREG5 or VREG3 22 33 -- kHz -- 2 -- ms 9.4 10 10.6 μA -- 4700 -- ppm/°C VENTRIPx = IENTRIPx x RENTRIPx 0.515 -- 3 V GND − PHASEx, VENTRIPx = 2V 180 200 220 mV -- 3 -- mV Input Supply VIN Standby Current IVIN_SBY VIN Shutdown Supply IVIN_SHDN Current Quiescent Power Consumption PVIN +PPVCC VIN = 6V to 25V, ENTRIPx = GND VIN = 6V to 25V, ENTRIPx = EN = GND Both SMPS On, VFBx = 2.1V, SKIPSEL = GND, VOUT1 = 5V, VOUT2 = 3.3V (Note 5) SMPS Output and FB Voltage DEM Mode FBx Voltage VFBx Output Voltage Adjust VOUTx Range VOUTx Discharge Current On-Time PWM Mode (Note 6) TONSEL = GND On-Time Pulse Width tON TONSEL = REF TONSEL = VREG5 Minimum Off-Time Ultrasonic Mode Frequency Soft-Start tOFF Soft-Start Time tSSx Internal Soft-Start IENTRIPx VENTRIPx = 0.9V V ns Current Sense ENTRIPx Source Current ENTRIPx Current Temperature Coefficient ENTRIPx Adjustment Range Current Limit Threshold Zero-Current Threshold TCIENTRIPx In Comparison with 25°C GND − PHASEx in DEM (Note 6) To be continued www.richtek.com 6 DS8223N-03 April 2011 RT8223N Parameter Symbol Test Conditions Min Typ Max 4.8 5 5.2 4.75 5 5.25 4.75 5 5.25 3.2 3.33 3.46 3.13 3.33 3.5 3.13 3.33 3.5 Unit Internal Regulator and Reference VOUT1 = GND, I VREG5 < 100mA VREG5 Output Voltage VVREG5 VOUT1 = GND, 6.5V < VIN < 25V, IVREG5 < 100mA VOUT1 = GND, 5.5V < VIN < 25V, IVREG5 < 50mA VOUT2 = GND, I VREG3 < 100mA VREG3 Output Voltage VVREG3 VOUT2 = GND, 6.5V < VIN < 25V, IVREG3 < 100mA VOUT2 = GND, 5.5V < VIN < 25V, IVREG3 < 50mA V V VREG5 Output Current IVREG5 VVREG5 = 4.5V, VOUT1 = GND 100 175 250 mA VREG3 Output Current IVREG3 VVREG3 = 3V, VOUT2 = GND 100 175 250 mA VREG5 Switch-over Threshold to VOUT1 VSW5 VOUT1 Rising Edge 4.6 4.75 4.9 VOUT1 Falling Edge 4.3 4.4 4.5 VREG3 Switch-over Threshold to VOUT2 VSW3 VOUT2 Rising Edge 2.975 3.125 3.25 VOUT2 Falling Edge 2.775 2.875 2.975 -- 1.5 3 Ω VREGx Switch-over Equivalent Resistance REF Output Voltage V V RSWx VREGx to VOUTx, 10mA VREF No External Load 1.98 2 2.02 V REF Load Regulation 0 < ILOAD < 100μA -- 10 -- mV REF Sink Current REF in Regulation 5 -- -- μA Rising Edge -- 4.2 4.45 Falling Edge 3.7 3.9 4.1 SMPSx off -- 2.5 -- PGOOD Detect, FBx falling Edge Hysteresis, Rising Edge with SS Delay Time 82 85 88 -- 6 -- UVLO VREG5 Under Voltage Lockout Threshold VREG3 Under Voltage Lockout Threshold Power Good PGOOD Threshold V V % PGOOD Propagation Delay PGOOD Leakage Current Falling Edge, 50mV Overdrive -- 10 -- μs High State, Forced to 5.5V -- -- 1 μA PGOOD Output Low Voltage ISINK = 4mA -- -- 0.3 V 109 112 116 % FBx = 2.35V -- 5 -- μs UVP Detect, FBx Falling Edge 49 52 56 % Fault Detection Over Voltage Protection Trip Threshold Over Voltage Protection Propagation Delay Under Voltage Protection Trip Threshold VFB_OVP VFB_UVP OVP Detect, FBx Rising Edge To be continued DS8223N-03 April 2011 www.richtek.com 7 RT8223N Parameter UVP Shutdown Blanking Time Symbol Test Conditions Min Typ Max Unit t SHDN_UVP From ENTRIPx Enable -- 5 -- ms TSHDN -- 150 -- °C -- 10 -- °C Low Level (DEM Mode) -- -- 0.8 REF Level (PWM Mode) 1.8 -- 2.3 High Level (Ultrasonic Mode) 2.7 -- -- -0.515 4.5 -0.25 ---0.4 0.35 0.25 3 -0.515 -- Thermal Shutdown Thermal Shutdown Thermal Shutdown Hysteresis Logic Input SKIPSEL Input Voltage ENTRIPx Input Voltage VENTRIPx ENTRIPx Low Level Threshold EN Threshold Voltage V V Logic-High VIH 2.4 -- -- Logic-Low VIL -- -- 0.4 Floating, Default Enable 2.4 3.3 4.2 V VEN = 0.2V, Source 1.5 3 5 -- 3 8 μA EN Voltage VEN EN Current I EN ENC Threshold Voltage Low Level (SMPS Off) On Level (SMPS On) High Level (SMPS Off) Rising Edge Falling Edge V VEN = 5V, Sink Logic-High VIH_ENC 2 -- -- Logic-Low VIL_ENC -- -- 0.6 VOUT1 / VOUT2 = 200kHz/250kHz -- -- 0.8 VOUT1 / VOUT2 = 250kHz/313kHz 1.8 -- 2.3 VOUT1 / VOUT2 = 300kHz/375kHz 2.7 -- -- VTONSEL, VSKIPSEL = 0V or 5V −1 -- 1 VENC = 0V or 5V −1 -- 1 VREG5 to BOOTx, 10mA -- 40 80 -- 4 8 TONSEL Setting Voltage Input Leakage Current V V V μA Internal BOOT Switch Internal Boost Switch On-Resistance Power MOSFET Drivers UGATEx On-Resistance LGATEx On-Resistance Dead Time www.richtek.com 8 UGATEx, High State, BOOTx to PHASEx Forced to 5V UGATEx, Low State, BOOTx to PHASEx Forced to 5V LGATEx, High State -- 1.5 4 -- 4 8 LGATEx, Low State -- 1.5 4 LGATEx Rising -- 30 -- UGATEx Rising -- 40 -- Ω Ω Ω ns DS8223N-03 April 2011 RT8223N Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. θJA is measured in natural convection at TA = 25°C on a high effective thermal conductivity four-layer test board of JEDEC 51-7 thermal measurement standard. The measurement case position of θJC is on the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. PVIN + PVREG5 Note 6. Guaranteed by Design. DS8223N-03 April 2011 www.richtek.com 9 RT8223N Typical Operating Characteristics VOUT1 Efficiency vs. Load Current VOUT1 Efficiency vs. Load Current 100 90 100 90 DEM Mode DEM Mode 80 70 Efficiency (%) 1 Efficiency (%) 1 80 Ultrasonic Mode 60 50 PWM Mode 40 30 20 70 Ultrasonic Mode 60 50 PWM Mode 40 30 VIN = 12V TONSEL = GND, EN = FLOATING, 20 VIN = 8V, TONSEL = GND, EN = FLOATING, VENTRIP1 = 1.5V, VENTRIP2 = 5V 10 0 0.001 0.01 0.1 1 10 0 0.001 10 VENTRIP1 = 1.5V, VENTRIP2 = 5V 0.01 90 DEM Mode 80 Efficiency (%) 1 Efficiency (%) 1 10 100 80 70 Ultrasonic Mode 60 50 PWM Mode 40 30 VIN = 20V 20 0.01 70 60 Ultrasonic Mode 50 PWM Mode 40 30 0.1 1 VIN = 8V TONSEL = GND, EN = FLOATING, VENTRIP1 = 5V, VENTRIP2 = 1.5V 10 VENTRIP1 = 1.5V, VENTRIP2 = 5V 0 0.001 DEM Mode 20 TONSEL = GND, EN = FLOATING, 10 0 0.001 10 0.01 VOUT2 Efficiency vs. Load Current 100 90 90 80 Efficiency (%) 1 DEM Mode 70 Ultrasonic Mode 60 50 PWM Mode 40 30 VIN = 12V 20 0 0.001 0.01 0.1 Load Current (A) www.richtek.com 10 10 DEM Mode 70 60 Ultrasonic Mode 50 40 PWM Mode 30 VIN = 20V TONSEL = GND,EN = FLOATING, VENTRIP1 = 5V, VENTRIP2 = 1.5V 20 TONSEL = GND, EN = FLOATING, VENTRIP1 = 5V, VENTRIP2 = 1.5V 10 1 VOUT2 Efficiency vs. Load Current 100 80 0.1 Load Current (A) Load Current (A) Efficiency (%) 1 1 VOUT2 Efficiency vs. Load Current VOUT1 Efficiency vs. Load Current 100 90 0.1 Load Current (A) Load Current (A) 1 10 10 0 0.001 0.01 0.1 1 10 Load Current (A) DS8223N-03 April 2011 RT8223N VOUT1 Switching Frequency vs. Load Current VOUT1 Switching Frequency vs. Load Current 220 PWM Mode 200 Switching Frequency (kHz) 1 Switching Frequency (kHz) 1 220 180 160 140 VIN = 8V TONSEL = GND, EN = FLOATING, VENTRIP1 = 1.5V, VENTRIP2 = 5V 120 100 80 60 Ultrasonic Mode 40 20 0.01 0.1 1 10 Switching Frequency (kHz)1 Switching Frequency (kHz) 1 PWM Mode 180 160 VIN = 20V TONSEL = GND, EN = FLOATING, VENTRIP1 = 1.5V, VENTRIP2 = 5V 100 80 60 40 Ultrasonic Mode 20 0 0.001 DEM Mode 0.01 0.1 1 10 Load Current (A) 100 80 60 40 Ultrasonic Mode DEM Mode 0.01 0.1 1 10 280 260 PWM Mode 240 220 200 VIN = 8V 180 TONSEL = GND, EN = FLOATING, 160 VENTRIP1 = 5V, VENTRIP2 = 1.5V 140 120 100 80 60 Ultrasonic Mode 40 20 DEM Mode 0 0.001 0.01 0.1 1 10 Load Current (A) VOUT2 Switching Frequency vs. Load Current VOUT2 Switching Frequency vs. Load Current 280 PWM Mode 260 240 220 200 VIN = 12V 180 TONSEL = GND, EN = FLOATING, 160 VENTRIP1 = 5V, VENTRIP2 = 1.5V 140 120 100 80 60 Ultrasonic Mode 40 20 DEM Mode 0 0.001 0.01 0.1 1 280 PWM Mode 260 240 220 200 VIN = 20V 180 TONSEL = GND, EN = FLOATING, 160 VENTRIP1 = 5V, VENTRIP2 = 1.5V 140 120 100 80 60 Ultrasonic Mode 40 20 DEM Mode 0 0.001 0.01 0.1 1 Load Current (A) DS8223N-03 April 2011 Switching Frequency (kHz)1 Switching Frequency (kHz)1 120 VOUT2 Switching Frequency vs. Load Current 220 120 140 VIN = 12V TONSEL = GND, EN = FLOATING, VENTRIP1 = 1.5V, VENTRIP2 = 5V Load Current (A) VOUT1 Switching Frequency vs. Load Current 140 160 0 0.001 Load Current (A) 200 180 20 DEM Mode 0 0.001 PWM Mode 200 10 10 Load Current (A) www.richtek.com 11 RT8223N VOUT2 Output Voltage vs. Load Current 3.446 VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = 1.5V, VENTRIP2 = 5V VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = 5V, VENTRIP2 = 1.5V 3.440 3.434 Output Voltage (V) 1 Output Voltage (V) 1 VOUT1 Output Voltage vs. Load Current 5.090 5.084 5.078 5.072 5.066 5.060 5.054 5.048 5.042 5.036 5.030 5.024 5.018 5.012 5.006 5.000 0.001 Ultrasonic Mode PWM Mode 3.428 3.422 Ultrasonic Mode 3.416 3.410 PWM Mode 3.404 3.398 3.392 DEM Mode DEM Mode 3.386 0.01 0.1 1 3.380 0.001 10 0.01 Load Current (A) 3.358 VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = VENTRIP2 = 5V Output Voltage (V) 1 Output Voltage (V) 1 10 4.994 4.988 4.982 VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = VENTRIP2 = 5V 3.354 5.000 4.976 3.350 3.346 3.342 3.338 3.334 3.330 4.970 0 20 40 60 80 0 100 10 Reference Voltage vs. Output Current 100.0 VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = VENTRIP2 = 5V Battery Current (mA) 1 2.0064 2.0056 2.0048 2.0040 2.0032 2.0024 2.0016 2.0000 10 20 30 40 50 60 70 Output Current (µA) www.richtek.com 12 50 60 70 80 90 100 No Load 10.0 Ultrasonic Mode 1.0 DEM Mode 0.1 0 40 PWM Mode 2.0008 -10 30 Battery Current vs. Input Voltage 2.0080 2.0072 20 Output Current (mA) Output Current (mA) Reference Voltage (V) 1 1 VREG3 Output Voltage vs. Output Current VREG5 Output Voltage vs. Output Current 5.006 0.1 Load Current (A) TONSEL = GND, EN = FLOATING, VENTRIP1 = VENTRIP2 = 0.91V 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Voltage (V) DS8223N-03 April 2011 RT8223N Shutdown Input Current vs. Input Voltage Standby Input Current vs. Input Voltage 249 248 247 246 245 244 243 242 No Load, EN = FLOATING, VENTRIP1 = VENTRIP2 = 5V 241 240 Shutdown Input Current (µA)1 Standby Input Current (µA)1 250 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 No Load, EN = GND, VENTRIP1 = VENTRIP2 = 5V 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Input Voltage (V) Input Voltage (V) Reference Voltage vs. Temperature VREG5, VREG3 and REF Start Up 2.011 Reference Voltage (V) 1 2.008 VREG5 (5V/Div) VREG3 (2V/Div) 2.005 2.002 1.999 1.996 REF (2V/Div) 1.993 1.990 VIN = 12V, VENTRIP1 = VENTRIP2 = 5V, EN = FLOATING, TONSEL = GND 1.987 EN (2V/Div) No Load, VIN = 12V, TONSEL = GND, EN = FLOATING, VENTRIP1 = VENTRIP2 = 5V 1.984 -50 -25 0 25 50 75 100 Time (400μs/Div) 125 Temperature (°C) Power On From ENC Power Off From ENC No Load No Load VOUT1 (5V/Div) VOUT2 (2V/Div) VOUT1 (5V/Div) VOUT2 (2V/Div) PGOOD (5V/Div) PGOOD (5V/Div) ENC (5V/Div) VIN = 12V, TONSEL = GND, SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V, VENC = 5V Time (1ms/Div) DS8223N-03 April 2011 ENC (5V/Div) VIN = 12V, TONSEL = GND, SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V, VENC = 5V Time (4ms/Div) www.richtek.com 13 RT8223N Power On from ENTRIP1 Power Off from ENTRIP1 No Load No Load VOUT1 (2V/Div) VOUT1 (2V/Div) PGOOD (5V/Div) PGOOD (5V/Div) VIN = 12V, TONSEL = GND, ENTRIP1 (5V/Div) SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V ENTRIP1 (5V/Div) VIN = 12V, TONSEL = GND, SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V Time (1ms/Div) Time (2ms/Div) Power On from ENTRIP2 Power Off from ENTRIP2 No Load No Load VOUT2 (2V/Div) VOUT2 (2V/Div) PGOOD (5V/Div) PGOOD (5V/Div) VIN = 12V, TONSEL = GND, ENTRIP2 (5V/Div) SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V ENTRIP2 (5V/Div) Time (1ms/Div) VOUT1 PWM Mode Load Transient Response Time (2ms/Div) VOUT2 PWM Mode Load Transient Response VOUT1_AC (50mV/Div) VOUT2_AC (50mV/Div) Inductor Current (5A/Div) Inductor Current (5A/Div) UGATE1 (20V/Div) UGATE2 (20V/Div) VIN = 12V, TONSEL = GND, LGATE1 (5V/Div) EN = FLOATING, SKIPSEL = REF, IOUT1 = 0A to 6A Time (20μs/Div) www.richtek.com 14 VIN = 12V, TONSEL = GND, SKIPSEL = REF, EN = FLOATING, VENTRIP1 = VENTRIP2 = 1.5V VIN = 12V, TONSEL = GND, LGATE2 (5V/Div) EN = FLOATING, SKIPSEL = REF, IOUT2 = 0A to 6A Time (20μs/Div) DS8223N-03 April 2011 RT8223N OVP UVP No Load, VIN = 12V, TONSEL = GND, EN = FLOATING, SKIPSEL = GND VOUT1 (5V/Div) VOUT1 (2V/Div) VOUT2 (2V/Div) PGOOD (5V/Div) UGATE1 (20V/Div) PGOOD (5V/Div) LGATE1 (5V/Div) Time (4ms/Div) DS8223N-03 April 2011 VIN = 12V, TONSEL = GND, EN = FLOATING, SKIPSEL = REF Time (100μs/Div) www.richtek.com 15 RT8223N Application Information The RT8223N is a dual, Mach ResponseTM DRVTM dual ramp valley mode synchronous buck controller. The controller is designed for low voltage power supplies for notebook computers. Richtek's Mach Response TM technology is specifically designed for providing 100ns “instant-on” response to load steps while maintaining a relatively constant operating frequency and inductor operating point over a wide range of input voltages. The topology circumvents the poor load-transient timing problems of fixed-frequency current mode PWMs while avoiding the problems caused by widely varying switching frequencies in conventional constant on-time and constant off-time PWM schemes. The DRV TM mode PWM modulator is specifically designed to have better noise immunity for such a dual output application. The RT8223N includes 5V (VREG5) and 3.3V (VREG3) linear regulators. VREG5 linear regulator can step down the battery voltage to supply both internal circuitry and gate drivers. The synchronous-switch gate drivers are directly powered from VREG5. When VOUT1 voltage is above 4.75V, an automatic circuit will switch the power of the device from VREG5 linear regulator to VOUT1. PWM Operation The Mach ResponseTM DRVTM mode controller relies on the output filter capacitor's effective series resistance (ESR) to act as a current sense resistor, so the output ripple voltage provides the PWM ramp signal. Refer to the RT8223N's function block diagram, the synchronous high side MOSFET will be turned on at the beginning of each cycle. After the internal one-shot timer expires, the MOSFET will be turned off. The pulse width of this one shot is determined by the converter's input voltage and the output voltage to keep the frequency fairly constant over the input voltage range. Another one shot sets a minimum off-time (300ns typ.). The on-time one shot will be triggered if the error comparator is high, the low side switch current is below the current limit threshold, and the minimum off-time one shot has timed out. www.richtek.com 16 PWM Frequency and On-Time Control The Mach ResponseTM control architecture runs with pseudo constant frequency by feed-forwarding the input and output voltage into the on-time one-shot timer. The high side switch on-time is inversely proportional to the input voltage as measured by VIN, and proportional to the output voltage. There are two benefits of a constant switching frequency. First, the frequency can be selected to avoid noise-sensitive regions such as the 455kHz IF band. Second, the inductor ripple current operating point remains relatively constant, resulting in easy design methodology and predictable output voltage ripple. Frequency for the 3V SMPS is set at 1.25 times higher than the frequency for 5V SMPS. This is done to prevent audio-frequency “Beating” between the two sides, which switch asynchronously for each side. The frequencies are set by the TONSEL pin connection as shown in Table 1. The on-time is given by : tON = K × (VOUT / VIN ) where “K”is set by the TONSEL pin connection (Table 1). The on-time guaranteed in the Electrical Characteristics table is influenced by switching delays in the external high side power MOSFET. Two external factors that influence switching frequency accuracy are resistive drops in the two conduction loops (including inductor and PC board resistance) and the dead time effect. These effects are the largest contributors to the change in frequency with changing load current. The dead-time effect increases the effective on-time by reducing the switching frequency . It occurs only in PWM mode (SKIPSEL= REF) when the inductor current reverses at light or negative load currents. With reversed inductor current, the inductor's EMF causes PHASEx to go high earlier than normal, thus extending the on-time by a period equal to the low-tohigh dead time. For loads above the critical conduction point, the actual switching frequency is : f = (VOUT + VDROP1) / (tON × (VIN + VDROP1 − VDROP2 )) where VDROP1 is the sum of the parasitic voltage drops in the inductor discharge path,which includes the synchronous rectifier, inductor, and PC board resistances. VDROP2 is the sum of the resistances in the charging path, and tON is the on-time. DS8223N-03 April 2011 RT8223N Table 1. TONSEL Connection and Switching Frequency TONSEL SMPS 1 K-Factor (μs) SMPS 1 Frequency (kHz) SMPS 2 K-Factor (μs) SMPS 2 Frequency (kHz) Approximate K-Factor Error (%) GND 5 200 4 250 ±10 REF 4 250 3.19 313 ±10 VREG5 or VREG3 3.33 300 2.67 375 ±10 Operation Mode Selection (SKIPSEL) The RT8223N supports three operation modes : DiodeEmulation Mode, Ultrasonic Mode, and Forced-CCM Mode. User can set operation mode via the SKIPSEL pin. Diode-Emulation Mode (SKIPSEL=GND) In Diode-Emulation Mode, the RT8223N automatically reduces switching frequency at light-load conditions to maintain high efficiency. This reduction of frequency is achieved smoothly. As the output current decreases from heavy-load condition, the inductor current is also reduced and eventually comes to the point when its valley touches zero current, which is the boundary between continuous conduction and discontinuous conduction modes. By emulating the behavior of diodes, the low side MOSFET allows only partial negative current when the inductor freewheeling current becomes negative. As the load current is further decreased, it takes longer and longer to discharge the output capacitor to the level that requires the next “ON” cycle. The on-time is kept the same as that in the heavy-load condition. In reverse, when the output current increases from light load to heavy-load, the switching frequency increases to the preset value as the inductor current reaches the continuous conduction. The transition load point to the light-load operation is shown as follows (Figure 1) : IL Slope = (VIN -VOUT) / L IL, PEAK ILoad = IL, PEAK / 2 0 ILOAD (SKIP) ≈ (VIN − VOUT ) × tON 2L where tON is the On-time. The switching waveforms may appear noisy and asynchronous when light loading causes Diode-Emulation Mode operation. However this is normal and results in high efficiency. Trade-offs in PFM noise vs. light load efficiency is made by varying the inductor value. Generally, low inductor values produce a broader efficiency vs. load curve, while higher values result in higher full-load efficiency (assuming that the coil resistance remains fixed) and less output voltage ripple. Penalties for using higher inductor values include larger physical size and degraded load transient response (especially at low input-voltage levels). Ultrasonic Mode (SKIPSEL = VREG5 or VREG3) The RT8223N activates an unique Diode-Emulation Mode with a minimum switching frequency of 25kHz, called the Ultrasonic Mode. The Ultrasonic Mode avoids audiofrequency modulation that would otherwise be present when a lightly loaded controller automatically skips pulses. In Ultrasonic Mode, the high side switch gate driver signal is OR with an internal oscillator (>25kHz). Once the internal oscillator is triggered, the controller enters constant off-time control. When output voltage reaches the setting peak threshold, the controller turns on the low side MOSFET until the controller detects that the inductor current dropped has below the zero-crossing threshold. The internal timer provides a constant off-time control and it is effective to regulate the output voltage under light load conditions. t TON Figure 1. Boundary Condition of CCM/DEM DS8223N-03 April 2011 www.richtek.com 17 RT8223N Forced CCM Mode (SKIPSEL = REF) The low noise, Forced CCM mode (SKIPSEL = REF) disables the zero-crossing comparator, which controls the low side switch on-time. This causes the low side gatedriver waveform to become the complement of the high side gate-driver waveform. This in turn causes the inductor current to reverse at light loads as the PWM loop to maintain a duty ratio of VOUT/VIN. The benefit of Forced CCM Mode is to keep the switching frequency fairly constant, but it comes at a cost. The no load battery current can be from 10mA to 40mA, depending on the external MOSFETs. sensing algorithm. If the magnitude of the current sense signal at PHASEx is above the current-limit threshold, the PWM is not allowed to initiate a new cycle (Figure 2). The actual peak current is greater than the current-limit threshold by an amount equal to the inductor ripple current. Therefore, the exact current-limit characteristic and maximum load capability are functions of the sense resistance, inductor value, and battery and output voltage. IL IL, PEAK ILOAD ILIM Reference and linear Regulators (REF, VREGx) The 2V reference (REF) is accurate within ±1% over the entire operating temperature range, making REF useful as a precision system reference. Bypass REF to GND with a minimum 0.22μF ceramic capacitor. REF can supply up to 100μA for external loads. Loading REF reduces the VOUTx output voltage slightly because of the reference load-regulation error. The RT8223N includes 5V (VREG5) and 3.3V (VREG3) linear regulators. The VREG5 regulator supplies a total of 100mA for internal and external loads, including the MOSFET gate driver and PWM controller. The VREG3 regulator supplies up to 100mA for external loads. Bypass VREG5 and VREG3 with a minimum 4.7μF ceramic capacitor. When the 5V main output voltage is above the VREG5 switch over threshold (4.75V), an internal 1.5Ω P-Channel MOSFET switch connects VOUT1 to VREG5, while simultaneously shutting down the VREG5 linear regulator. Similarly, when the 3.3V main output voltage is above the VREG3 switch over threshold (3.125V), an internal 1.5Ω P-Channel MOSFET switch connects VOUT2 to VREG3, while simultaneously shutting down the VREG3 linear regulator. It can decrease the power dissipation from the same battery, because the converted efficiency of SMPS is better than the converted efficiency of the linear regulator. t 0 Figure 2. “Valley” Current-Limit The RT8223N uses the on-resistance of the synchronous rectifier as the current-sense element and supports temperature compensated MOSFET RDS(ON) sensing. The RILIMX resistor between the ENTRIPX pin and GND sets the current-limit threshold. The resistor RILIMX is connected to a current source from ENTRIPx, which is 10μA typically at room temperature. The current source has a 4700ppm/ °C temperature slope to compensate the temperature dependency of the RDS(ON). When the voltage drop across the sense resistor or low side MOSFET equals 1/10 the voltage across the RILIMX resistor, positive current limit will be activated. The high side MOSFET will not be turned on until the voltage drop across the MOSFET falls below 1/10 the voltage across the RILIMX resistor. Choose a current limit resistor by following equations VILIMx = (RILIMx x10μA)/10 = IILIMx x RDS(ON) RILIMx = (IILIMx x RDS(ON)) x 10/10μA Carefully observe the PC board layout guidelines to ensure that noise and DC errors do not corrupt the current-sense signal at PHASEx and GND. Mount or place the IC close to the low side MOSFET. MOSFET Gate Driver (UGATEx, LGATEx) Current-Limit Setting (ENTRIPx) The RT8223N has a cycle-by-cycle current-limit control. The current-limit circuit employs an unique “valley” current www.richtek.com 18 The high side driver is designed to drive high-current, low RDS(ON) N-MOSFET(s). When configured as a floating driver, a 5V bias voltage is delivered from the VREG5 supply. DS8223N-03 April 2011 RT8223N The average drive current is calculated by the gate charge at V GS = 5V times the switching frequency. The instantaneous drive current is supplied by the flying capacitor between the BOOTx and PHASEx pins. A dead time to prevent shoot through is internally generated between high side MOSFET off to the low side MOSFET on, and the low side MOSFET off to the high side MOSFET on. UVLO Protection The low side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). The internal pull-down transist or that drives LGATEX low is robust, with a 1.5Ω typical onresistance. A 5V bias voltage is delivered from the VREG5 supply. The instantaneous drive current is supplied by an input capacitor connected between VREG5 and GND. PGOOD is an open-drain type output and requires a pullup resistor. PGOOD is actively held low in soft-start, standby, and shutdown. It is released when both output voltages are above 91% of the nominal regulation point. The PGOOD goes low if either output turns off or is 15% below its nominal regulator point. For high current applications, some combinations of high and low side MOSFETs might be encountered that will cause excessive gate-drain coupling, which can lead to efficiency killing, EMI-producing shoot-through currents. This can be remedied by adding a resistor in series with BOOTx, which increases the turn-on time of the high side MOSFET without degrading the turn-off time (Figure 3). Output Over Voltage Protection (OVP) VIN BOOTx RBOOT UGATEx PHASEx Figure 3. Increasing the UGATEx Rise Time Soft-Start The RT8223N provides an internal soft-start function to prevent large inrush current and output voltage overshoot when the converter starts up. The soft-start (SS) automatically begins once the chip is enabled. During softstart, it clamps the ramping of internal reference voltage which is compared with FBx signal. The typical softstart duration is 2 ms. A unique PWM duty limit control that prevents output over voltage during soft-start period is designed specifically for FBx floating. DS8223N-03 April 2011 The RT8223N features VREG5 under voltage lockout protection (UVLO). When the VREG5 voltage is lower than 3.9V (typ.) and the VREG3 voltage is lower than 2.5V (typ.), both switch power supplies are shut off. This is non-latch protection. Power Good Output (PGOOD) The output voltage can be continuously monitored for over voltage. If the output voltage exceeds 12% of its set voltage threshold, the over voltage protection is triggered and the LGATEx low side gate drivers are forced high. This activates the low side MOSFET switch, which rapidly discharges the output capacitor and pulls the input voltage downward. The RT8223N is latched once OVP is triggered and can only be released by toggling EN, ENTRIPx or cycling VIN. There is a 5μs delay built into the over voltage protection circuit to prevent false alarm. Note that the LGATEx latching high causes the output voltage to dip slightly negative when energy has been previously stored in the LC tank circuit. For loads that cannot tolerate a negative voltage, place a power Schottky diode across the output to act as a reverse polarity clamp. If the over-voltage condition is caused by a short in the high side switch, completely turning on the low side MOSFET can create an electrical short between the battery and GND, which will blow the fuse and disconnect the battery from the output. Output Under Voltage Protection (UVP) The output voltage can be continuously monitored for under voltage protection. If the output is less than 52% of its set voltage threshold, under voltage protection will be triggered, and then both UGATEx and LGATEx gate drivers will be forced low. The UVP will be ignored for at least 5ms (typ.) after start-up or a rising edge on ENTRIPx. Toggle www.richtek.com 19 RT8223N ENTRIPx or cycle VIN to reset the UVP fault latch and restart the controller. Thermal Protection The RT8223N features thermal shutdown protection to prevent overheat damage to the device. Thermal shutdown occurs when the die temperature exceeds +150°C. All internal circuitry is inactive during thermal shutdown. The RT8223N triggers thermal shutdown if VREGx is not supplied from VOUTx, while the input voltage on VIN and the drawing current from VREGx are too high. Even if VREGx is supplied from VOUTx, large power dissipation on automatic switches caused by overloading VREGx, may also result in thermal shutdown. Discharge Mode (Soft-Discharge) When ENTRIPx is low and a transition to standby or shutdown mode occurs, or the output under voltage fault latch is set, the output discharge mode will be triggered. During discharge mode, the output capacitors' residual charge will be discharged to GND through an internal switch. Shutdown Mode The RT8223N SMPS1, SMPS2, VREG3 and VREG5 have independent enabling controls. Drive EN, ENTRIP1 and ENTRIP2 below the precise input falling-edge trip level to place the RT8223N in its low power shutdown state. The RT8223N consumes only 20μA of input current while in shutdown. When shutdown mode is activated, the reference turns off. The accurate 0.4V falling-edge threshold on the EN pin can be used to detect a specific analog voltage level as well as to shutdown the device. Once in shutdown, the 2.4V rising-edge threshold activates, providing sufficient hysteresis for most applications. Power Up Sequencing and On/Off Controls (ENC) ENTRIP1 and ENTRIP2 control the SMPS power up sequencing. When the RT8223N is in single channel mode, ENTRIP1 or ENTRIP2 enables the respective output when ENTRIPx voltage descends below 3V. Furthermore, the RT8223N can also be in dual channel mode. In this mode, outputs are enabled when ENC voltage rises above 2V. Table 2. Operation Mode Truth Table MODE Power UP Condition VREGx < UVLO threshold EN = high, VOUT1 or VOUT2 enabled Over Voltage Either output > 111% of the nominal Protection level. Under Either output < 52% of the nominal Voltage level after 3ms time-out expires and Protection output is enabled Either SMPS output is still high in Discharge either standby mode or shutdown mode ENTRIPX<startup threshold, EN Standby =high. RUN Comment Transitions to discharge mode after a VIN POR and after REF becomes valid. VREG5, VREG3, and REF remain active. Normal Operation. LGATEx is forced high. VREG3, VREG5 and REF active. Exited by VIN POR or by toggling EN, ENTRIPx, ENC Both UGATEx and LGATEx are forced low and enter discharge mode. VREG3, VREG5 and REF are active. Exited by VIN POR or by toggling EN, ENTRIPx, ENC During discharge mode, there is one path to discharge the outputs capacitor residual charge. That is output capacitor discharge to GND through an internal switch. VREG3, VREG5 and REF are active. Shutdown EN =low All circuitry off. Thermal Shutdown TJ > +150°C All circuitry off. Exit by VIN POR or by toggling EN, ENTRIPx, ENC www.richtek.com 20 DS8223N-03 April 2011 RT8223N Table 3. Power Up Sequencing EN (V) ENC (V) ENTRIP1 ENTRIP2 REF Low Low X X Off Off Off Off Off Low X X On On On Off Off Off Off On On On Off Off “>2.4V” => High VREG5 VREG3 SMPS1 SMPS2 “>2.4V” “>2V” => High => High “>2.4V” => High “>2V” => High Off On On On On Off On “>2.4V” => High “>2V” => High On Off On On On On Off “>2.4V” => High “>2V” => High On On On On On On On Output Voltage Setting (FBx) Connect a resistor voltage-divider at the FBx pin between VOUTx and GND to adjust the respective output voltage between 2V and 5.5V (Figure 4). Referring to Figure 4 as an example, choose R2 to be approximately 10kΩ, and solve for R1 using the equation : ⎛ ⎛ R1 ⎞ ⎞ VOUTX = VFBX × ⎜ 1 + ⎜ ⎟⎟ ⎝ ⎝ R2 ⎠ ⎠ where VFBX is 2V. where LIR is the ratio of the peak to peak ripple current to the average inductor current. Find a low-loss inductor having the lowest possible DC resistance that fits in the allotted dimensions. Ferrite cores are often the best choice, although powdered iron is inexpensive and can work well at 200kHz. The core must be large enough not to saturate at the peak inductor current (IPEAK) : IPEAK = ILOAD(MAX) + ⎡⎣(LIR/2) × ILOAD(MAX) ⎤⎦ VIN VOUTx UGATEx PHASEx The calculation above shall serve as a general reference. To further improve the transient response, the output inductance can be reduced even further. This needs to be considered along with the selection of the output capacitor. LGATEx VOUTx FBx R1 Output Capacitor Selection R2 Figure 4. Setting VOUTX with a Resistor Voltage Divider Output Inductor Selection The switching frequency (on-time) and operating point (% ripple or LIR) determine the inductor value as shown in the following equation : t × ( VIN − VOUTx ) L = ON LIR × ILOAD(MAX) DS8223N-03 April 2011 The capacitor value and ESR determine the amount of output voltage ripple and load transient response. Thus, the capacitor value must be greater than the largest value calculated from below equations : V (ΔILOAD )2 × L × (K × OUTx + tOFF(MIN) ) VIN VSAG = ⎡ ⎛ V − VOUTx ⎞ ⎤ 2 × COUT × VOUTx × ⎢K × ⎜ IN ⎟ ⎥ − tOFF(MIN) VIN ⎠⎦ ⎣ ⎝ VSOAR = (ΔILOAD )2 × L 2 × COUT × VOUTx www.richtek.com 21 RT8223N Maximum Power Dissipation (W)1 ⎛ ⎞ 1 VP−P = LIR × ILOAD(MAX) × ⎜ ESR + ⎟ 8 C f × × OUT ⎝ ⎠ where VSAG and VSOAR are the allowable amount of undershoot voltage the and overshoot voltage in load transient, Vp-p is the output ripple voltage, tOFF(MIN) is the minimum off-time, and K is a factor listed in Table 1. Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. For recommended operating condition specifications of the RT8223N, the maximum junction temperature is 125°C and TA is the ambient temperature. The junction to ambient thermal resistance, θJA, is layout dependent. For WQFN24L 4x4 packages, the thermal resistance, θJA, is 52°C/ W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25°C can be calculated by the following formula : www.richtek.com 22 Four-Layer PCB 1.8 1.5 1.2 0.9 0.6 0.3 0.0 0 25 50 75 100 125 Ambient Temperature (°C) Figure 5. Derating Curve for the RT8223N Package Layout Considerations Layout is very important in high frequency switching converter designs, the PCB could radiate excessive noise and contribute to the converter instability with improper layout. Certain points must be considered before starting a layout using the RT8223N. ` Place the filter capacitor close to the IC, within 12mm (0.5 inch) if possible. ` Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching nodes. ` Connections from the drivers to the respective gate of the high side or the low side MOSFET should be as short as possible to reduce stray inductance. Use 0.65mm (25mils) or wider trace. ` All sensitive analog traces and components such as VOUTx, FBx, GND, ENTRIPx, PGOOD, and TONSEL should be placed away from high voltage switching nodes such as PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. ` Place the ground terminal of VIN capacitor(s), VOUTx capacitor(s), and source of low side MOSFETs as close as possible. The PCB trace defined as PHASEX node, which connects to source of high side MOSFET, drain of low side MOSFET and high voltage side of the inductor, should be as short and wide as possible. PD(MAX) = (125°C − 25°C) / (52°C/W) = 1.923W for WQFN-24L 4x4 package The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θJA. For the RT8223N package, the derating curve in Figure 5 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. 2.1 DS8223N-03 April 2011 RT8223N Outline Dimension D2 D SEE DETAIL A L 1 E E2 e b 1 1 2 2 A A3 DETAIL A Pin #1 ID and Tie Bar Mark Options A1 Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.180 0.300 0.007 0.012 D 3.950 4.050 0.156 0.159 D2 2.300 2.750 0.091 0.108 E 3.950 4.050 0.156 0.159 E2 2.300 2.750 0.091 0.108 e L 0.500 0.350 0.020 0.450 0.014 0.018 W-Type 24L QFN 4x4 Package Richtek Technology Corporation Richtek Technology Corporation Headquarter Taipei Office (Marketing) 5F, No. 20, Taiyuen Street, Chupei City 5F, No. 95, Minchiuan Road, Hsintien City Hsinchu, Taiwan, R.O.C. Taipei County, Taiwan, R.O.C. Tel: (8863)5526789 Fax: (8863)5526611 Tel: (8862)86672399 Fax: (8862)86672377 Email: [email protected] Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek. DS8223N-03 April 2011 www.richtek.com 23