S T F 8220 S amHop Microelectronics C orp. Oct.23 2006 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V P IN 1 ID R DS (ON) 7A S1 S1 S1 G1 S uper high dense cell design for low R DS (ON ). ( mW ) Max 20 @ V G S = 4.0V 28 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S2 S2 S2 G2 D1/D2 Bottom Drain Contact S1 4 5 S2 S1 3 6 S2 S1 2 7 S2 G1 1 8 G2 Q1 DF N 2X3 (B ottom view) Q2 Bottom Drain Contact ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 12 V ID 7 A IDM 30 A Drain-S ource Diode Forward C urrent a IS 1.7 A Maximum P ower Dissipation a PD 1.56 W Drain C urrent-C ontinuous @ T J =25 C -P ulsed b Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 80 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T F 8220 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 12V,V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.8 1.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.0V, ID = 7A 17.5 20 m ohm V GS =2.5V, ID = 4A 21 28 m ohm V DS = 5V, ID =4A 12 S 670 PF 188 PF 140 PF 15 ns 32 ns 50 ns OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b gFS Forward Transconductance 0.5 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =10V, V GS = 0V f =1.0MH Z CRSS c tD(ON) tr tD(OFF) V DD = 10V, ID = 1A, V GE N = 4.0V, R GE N= 6 ohm Fall Time tf 30 ns Total Gate Charge Qg 10 nC Gate-S ource Charge Q gs 1.4 nC Gate-Drain Charge Q gd 4.2 nC V DS =10V, ID = 4A, V GS =4.0V 2 S T F 8220 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.8 V GS = 0 V, Is = 1.7A VSD 1.2 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 V G S =4V V G S =2.5V 12 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 V G S =2V 12 V G S =1.5V 8 4 0 0 9 6 -55 C 3 T j=125 C 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.5 2.0 2.5 3.0 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON) , On-R es is tance Normalized 60 50 R DS (on) (m W) 1.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 30 V G S =2.5V 20 V G S =4V 10 0 0.5 25 C 1.6 1.4 V G S =4V I D =6A 1.2 V G S =2.5V I D =4A 1.0 0.8 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 20.0 I D =4A 15.0 Is , S ource-drain current (A) 50 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T F 8220 40 125 C 30 75 C 20 25 C 10 0 0 2 4 6 8 10.0 5.0 75 C 125 C 1.0 0 10 V G S , G ate-S ource Voltage (V ) 0.3 0.6 25 C 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T F 8220 5 V G S , G ate to S ource V oltage (V ) 900 C is s C , C apacitance (pF ) 750 6 600 C os s 450 300 C rs s 150 V DS =10V I D =4A 4 3 2 1 0 0 2 4 6 8 10 12 0 2 V DS , Drain-to S ource Voltage (V ) 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 80 600 100 60 T D (o ff) Tr Tf T D (on) 10 V DS =10V ,ID=1A 1 10 I D , Drain C urrent (A) S witching T ime (ns ) 6 4 R 6 10 (O N) L im it 10 10 1 DC 0.1 VGS= 4 V 1 DS 0.03 R g, G ate R es is tance ( W) s 1s V G S =4V S ingle P ulse T A =25 C 0.1 60 100 300 600 0m ms 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 1 D = 0.5 0.2 0.1 0.1 R JA (t ) = ( r t) * R JA RJA =80 °C/W 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * R JA (t) Duty Cycle , D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 13. Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 100 1000 STF8220 PACKAGE OUTLINE DIMENSIONS DFN E L D Θ H F C B A A1 D E H L B C F 0.80 0.00 2.95 1.95 0.30 1.45 1.65 0.195 0.18 0.22 1.00 0.025 3.05 2.05 0.45 1.55 1.75 0.211 0.28 0.32 6 0.031 0.00 0.116 0.077 0.014 0.057 0.065 0.0076 0.007 0.008 0.039 0.001 0.120 0.081 0.018 0.061 0.069 0.008 0.011 0.126 S T F 8220 DFN Tape and Reel Data 7