2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE IC 2SC4518 2SC4518A VEB=7V 100max µA IC=10mA 550min V VCE=4V, IC=1.8A 10 to 25 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V 1.35±0.15 1.35±0.15 IB1 (A) –5 10 1.8 0 70 600mA mA 400 mA Collector Current I C (A) 4 250 mA 3 150 mA 2 I B =50mA 1 0 0 1 2 3 0.7max –0.9 0.5max 4max 1.0 V B E (sat) 0.5 0.5 1 5 0 10 1 5 1 tf 0.5 t on 0.1 0.2 0.5 1.0 1.2 5 1 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 35 nk Collector Curr ent I C ( A) si 1000 at 500 Collector-Emitter Voltage V C E (V) 10 Without Heatsink 0.05 0.03 50 20 he 0.1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ite Without Heatsink Natural Cooling 0.5 fin 0.5 1 In 1 30 ith M aximum Power Dissip ation P C (W) s W Collecto r Curr ent I C (A) 1 5 100 0.8 10 5 50 0.6 4 20 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 114 t s tg V C C 250V I C :I B 1 :I B 2 =1:0.15:–0.5 Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) Transient Thermal Resistance –55˚C 0.05 0.03 10 2 10 7 5 t on• t s t g • t f (µ s) 25˚C Swi tchi ng T im e DC Cur rent Gain h F E 125˚C 0.1 3 V C E (sat) 0.1 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 4 1 (V C E =4V) 0.1 (V CE =4V) 5 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 I C – V BE Temperature Characteristics (Typical) I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 B C E 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 ton (µs) IB2 (A) 0.27 I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 Collector Current I C (A) 139 250 VBB2 (V) VBB1 (V) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j - a (˚C /W) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 10.1±0.2 IB Tstg External Dimensions FM20(TO220F) Unit 0.8±0.2 1000 Ratings Symbol Unit ±0.2 900 (Ta=25°C) 8.4±0.2 VCBO ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SC4518 2SC4518A 13.0min ■Absolute maximum ratings (Ta=25°C) 2SC4518 100 500 Collector-Emitter Voltage V C E (V) 2SC4518A 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150