SAVANTIC TIP107

SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP100/101/102
APPLICATIONS
·For industrial use
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP105
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
TIP106
Open emitter
Emitter-base voltage
IC
-80
TIP107
-100
TIP105
-60
TIP106
UNIT
-60
Open base
TIP107
VEBO
VALUE
-80
V
V
-100
Open collector
-5
V
Collector current-DC
-8
A
ICM
Collector current-peak
-15
A
IB
Base current-DC
-1
A
PC
Collector power dissipation
TC=25
80
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
W
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP105/106/107
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP105
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP106
MIN
TYP.
MAX
UNIT
-60
IC=-30mA, IB=0
TIP107
V
-80
-100
VCE(sat)-1
Collector-emitter saturation voltage
IC=-3A ,IB=-6mA
-2.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-8A ,IB=-80mA
-2.5
V
Base-emitter on voltage
IC=-8A ; VCE=-4V
-2.8
V
-50
µA
-50
µA
-2
mA
VBE
ICBO
ICEO
Collector cut-off current
Collector cut-off current
TIP105
VCB=-60V, IE=0
TIP106
VCB=-80V, IE=0
TIP107
VCB=-100V, IE=0
TIP105
VCE=-30V, IB=0
TIP106
VCE=-40V, IB=0
TIP107
VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-3A ; VCE=-4V
1000
hFE-2
DC current gain
IC=-8A ; VCE=-4V
200
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
2
20000
300
pF
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
TIP105/106/107