SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP105 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP106 Open emitter Emitter-base voltage IC -80 TIP107 -100 TIP105 -60 TIP106 UNIT -60 Open base TIP107 VEBO VALUE -80 V V -100 Open collector -5 V Collector current-DC -8 A ICM Collector current-peak -15 A IB Base current-DC -1 A PC Collector power dissipation TC=25 80 Ta=25 2 Tj Junction temperature 150 Tstg Storage temperature -65~150 W SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP105 VCEO(SUS) Collector-emitter sustaining voltage TIP106 MIN TYP. MAX UNIT -60 IC=-30mA, IB=0 TIP107 V -80 -100 VCE(sat)-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA -2.5 V Base-emitter on voltage IC=-8A ; VCE=-4V -2.8 V -50 µA -50 µA -2 mA VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP105 VCB=-60V, IE=0 TIP106 VCB=-80V, IE=0 TIP107 VCB=-100V, IE=0 TIP105 VCE=-30V, IB=0 TIP106 VCE=-40V, IB=0 TIP107 VCE=-50V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-4V 1000 hFE-2 DC current gain IC=-8A ; VCE=-4V 200 COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 2 20000 300 pF SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 TIP105/106/107