SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP110/111/112 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP115/116/117 APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP110 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP111 Open emitter Emitter-base voltage IC 80 TIP112 100 TIP110 60 TIP111 UNIT 60 Open base TIP112 VEBO VALUE 80 V V 100 Open collector 5 V Collector current-DC 2 A ICM Collector current-Pulse 4 A IB Base current-DC 50 mA PC Collector power dissipation TC=25 50 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP110/111/112 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP110 VCEO(SUS) Collector-emitter sustaining voltage TIP111 VBE ICBO ICEO TYP. MAX UNIT 60 IC=30mA, IB=0 V 80 100 TIP112 VCE(sat) MIN Collector-emitter saturation voltage IC=2A ,IB=8mA 2.5 V Base-emitter on voltage IC=2A ; VCE=4V 2.8 V 1 mA 2 mA 2 mA 100 pF Collector cut-off current Collector cut-off current TIP110 VCB=60V, IE=0 TIP111 VCB=80V, IE=0 TIP112 VCB=100V, IE=0 TIP110 VCE=30V, IB=0 TIP111 VCE=40V, IB=0 TIP112 VCE=50V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 1000 hFE-2 DC current gain IC=2A ; VCE=4V 500 COB Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 TIP110/111/112 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 4 TIP110/111/112