AO6810 30V Dual N-Channel MOSFET General Description The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS 30V ID (at VGS=10V) 3.5A RDS(ON) (at VGS=10V) < 50mΩ RDS(ON) (at VGS = 4.5V) < 70mΩ D1 D2 Top View G1 1 S2 2 6 5 D1 S1 G2 3 4 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.15 W 0.73 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±20 3 IDM TA=25°C Power Dissipation B Units V 3.5 ID TA=70°C Maximum 30 RθJA RθJL -55 to 150 Typ 78 106 64 °C Max 110 150 80 Units °C/W °C/W °C/W www.freescale.net.cn AO6810 30V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=55°C 5 VGS=10V, ID=3.5A TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.5 V 40 50 61 77 52 70 A 12 170 VGS=0V, VDS=15V, f=1MHz µA 2 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 1.5 A 210 35 pF pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.5A 1.7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=3.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs 2.5 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=4.2Ω, RGEN=3Ω 0.55 nC 1 nC 4.5 ns 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO6810 30V Dual N-Channel MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V VDS=5V 7V 12 4V 4.5V 8 6 9 ID(A) ID (A) 3.5V 6 4 3 125°C 25°C 2 VGS=3V 0 0 0 1 2 3 4 0.5 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 70 60 RDS(ON) (mΩ Ω) 1 VGS=4.5V 50 40 VGS=10V 30 VGS=10V ID=3.5A 1.6 1.4 1.2 VGS=4.5V ID=2A 17 5 2 10 1 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=3.5A 1.0E+01 40 1.0E+00 125°C 80 IS (A) RDS(ON) (mΩ Ω) 100 1.0E-01 125°C 1.0E-02 60 25°C 25°C 1.0E-03 40 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6810 30V Dual N-Channel MOSFET N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=15V ID=3.5A 250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 200 150 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C RDS(ON) limited 10µs 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 DC 100 Power (W) ID (Amps) 10.0 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 4/5 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.freescale.net.cn AO6810 30V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn