SHENZHENFREESCALE AO6810

AO6810
30V Dual N-Channel MOSFET
General Description
The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
VDS
30V
ID (at VGS=10V)
3.5A
RDS(ON) (at VGS=10V)
< 50mΩ
RDS(ON) (at VGS = 4.5V)
< 70mΩ
D1
D2
Top View
G1
1
S2
2
6
5
D1
S1
G2
3
4
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Steady-State
Steady-State
A
1.15
W
0.73
TJ, TSTG
Symbol
t ≤ 10s
V
20
PD
TA=70°C
±20
3
IDM
TA=25°C
Power Dissipation B
Units
V
3.5
ID
TA=70°C
Maximum
30
RθJA
RθJL
-55 to 150
Typ
78
106
64
°C
Max
110
150
80
Units
°C/W
°C/W
°C/W
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AO6810
30V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
5
VGS=10V, ID=3.5A
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VDS=5V, ID=3.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2.5
V
40
50
61
77
52
70
A
12
170
VGS=0V, VDS=15V, f=1MHz
µA
2
0.79
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
1.5
A
210
35
pF
pF
23
pF
3.5
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.5A
1.7
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=3.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs
2.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=4.2Ω,
RGEN=3Ω
0.55
nC
1
nC
4.5
ns
1.5
ns
18.5
ns
15.5
ns
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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AO6810
30V Dual N-Channel MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
VDS=5V
7V
12
4V
4.5V
8
6
9
ID(A)
ID (A)
3.5V
6
4
3
125°C
25°C
2
VGS=3V
0
0
0
1
2
3
4
0.5
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
70
60
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
50
40
VGS=10V
30
VGS=10V
ID=3.5A
1.6
1.4
1.2
VGS=4.5V
ID=2A
17
5
2
10
1
0.8
0
2
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
120
ID=3.5A
1.0E+01
40
1.0E+00
125°C
80
IS (A)
RDS(ON) (mΩ
Ω)
100
1.0E-01
125°C
1.0E-02
60
25°C
25°C
1.0E-03
40
1.0E-04
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO6810
30V Dual N-Channel MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
10
VDS=15V
ID=3.5A
250
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
200
150
100
Coss
2
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
100
Power (W)
ID (Amps)
10.0
10
10s
1
0.0
0.01
0.1
1
VDS (Volts)
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
4/5
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
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AO6810
30V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
5/5
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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