AO4448 80V N-Channel MOSFET General Description The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS 80V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V) < 16mΩ RDS(ON) (at VGS = 7V) < 20mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25°C ±25 V 8 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 70 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 10 ID TA=70°C Maximum 80 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4448 80V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 80 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C 50 VDS=0V, VGS= ±25V VGS=10V, ID=10A nA 3.3 4.2 V 13 16 23.5 28.5 20 mΩ 1 V 4 A A Static Drain-Source On-Resistance VGS=7V, ID=8A 15.4 gFS Forward Transconductance VDS=5V, ID=10A 23 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA 100 RDS(ON) TJ=125°C Units V VDS=80V, VGS=0V IDSS Crss Max mΩ S 1335 1670 2005 pF 150 215 280 pF 40 72 100 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.75 1.2 Ω 22 28 34 nC VGS=10V, VDS=40V, ID=10A 8.8 11 13 nC 5 8 11 nC VGS=0V, VDS=40V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 14.5 21 27.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 45.5 65 85 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω 12 ns 9 ns 20 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/6 www.freescale.net.cn AO4448 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 7.5V 10V 60 60 8V 6.5V ID(A) ID (A) VDS=5V 7V 40 6V 20 40 20 125°C 25°C VGS=5.5V 0 0 1 2 3 0 4 2 5 3 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 18 2.2 Normalized On-Resistance VGS=7V 16 RDS(ON) (mΩ ) 4 14 12 10 VGS=10V 2 VGS=10V ID=10A 1.8 1.6 1.4 1.2 VGS=7V ID=8A 1 17 5 2 10 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 ID=10A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 25°C 1.0E-02 15 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4448 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=40V ID=10A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 800 Coss 400 Crss 0 0 0 5 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 0 30 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 100.0 TA=25°C TA=100°C TA=150°C 10.0 TA=125°C 10µs RDS(ON) limited 10.0 ID (Amps) IAR (A) Peak Avalanche Current Ciss 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 10s DC 0.0 1.0 0.01 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) 100 1000 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4448 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 12 120 Irm 3 25 di/dt=800A/µs 10 125ºC 125ºC 20 2 8 25ºC 100 6 125ºC 90 15 trr trr (ns) 110 1.5 1 4 25ºC Qrr 70 5 2 25ºC S 0.5 125ºC 0 0 0 5 10 15 20 25 0 0 30 14 125ºC 80 12 30 10 25 8 Qrr 40 125ºC Irm (A) 25ºC 60 15 30 Is=20A 125ºC 2 40 1.5 25ºC 20 trr 15 1 6 25ºC 4 Irm 25ºC S 0.5 5 125ºC 0 2 0 25 2.5 10 20 20 35 trr (ns) Is=20A 10 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 100 5 S 60 Qrr (nC) 25ºC 10 80 200 400 600 800 1000 di/dt (A/µ µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt 5/6 2.5 S 130 di/dt=800A/µs Irm (A) Qrr (nC) 140 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AO4448 80V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn