SHENZHENFREESCALE AO4886

AO4886
100V Dual N-Channel MOSFET
General Description
The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) .This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
VDS
100V
3.3A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 80mΩ
RDS(ON) (at VGS = 4.5V)
< 91mΩ
D1
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
2.7
A
IDM
17
Avalanche Current C
IAS, IAR
14
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
10
mJ
Pulsed Drain Current
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
2.00
PD
TA=70°C
Junction and Storage Temperature Range
1/6
Maximum
100
3.3
ID
TA=70°C
S2
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.28
RθJA
RθJL
-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4886
100V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Max
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
17
Units
V
VDS=100V, VGS=0V
IDSS
TJ=55°C
5
µA
±100
nA
2.2
2.7
V
63.5
80
122
152
VGS=4.5V, ID=3A
70
91
mΩ
1
V
2.5
A
VGS=10V, ID=3A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=3A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.74
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
mΩ
S
620
778
942
pF
VGS=0V, VDS=50V, f=1MHz
38
55
81
pF
13
24
35
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.45
2.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13
16.3
20
nC
Qg(4.5V) Total Gate Charge
6.4
8.1
10
nC
2.2
2.8
3.4
nC
2.4
4.1
5.8
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=50V, ID=3A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=3A, dI/dt=500A/µs
14
21
28
Qrr
Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs
65
94
123
VGS=10V, VDS=50V, RL=16.7Ω,
RGEN=3Ω
6
ns
2.5
ns
21
ns
2.4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
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AO4886
100V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
4.5V
15
3.5V
ID(A)
ID (A)
15
10
5
10
125°C
5
VGS=3V
25°C
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2.8
90
VGS=4.5V
80
70
VGS=10V
60
Normalized On-Resistance
100
RDS(ON) (mΩ
Ω)
1
2.4
VGS=10V
ID=3A
2
17
5
VGS=4.5V
ID=3A 2
10
1.6
1.2
0.8
50
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
150
1.0E+02
ID=3A
1.0E+01
130
40
90
25°C
70
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
50
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
125°C
125°C
110
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
4
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4886
100V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
1000
VDS=50V
ID=3A
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
800
600
400
200
0
Coss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
100.0
100.0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
RDS(ON)
limited
TA=100°C
10.0
TA=25°C
10.0
TA=125°C
10µs
ID (Amps)
IAR (A) Peak Avalanche Current
Crss
1.0
100µs
1ms
TA=150°C
0.1
TJ(Max)=150°C
TA=25°C
10ms
10s
DC
0.0
1.0
1
0.1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4886
100V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4886
100V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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