SHENZHENFREESCALE AO4832

AO4832
30V Dual N-channel MOSFET
General Description
The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS
30V
10A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 13mΩ
RDS(ON) (at VGS=4.5V)
< 17.5mΩ
D1
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current C
C
Avalanche energy L=0.1mH
TA=25°C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/6
Steady-State
Steady-State
±20
V
A
8
55
IAS, IAR
22
A
EAS, EAR
24
mJ
2
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
Units
V
IDM
PD
TA=70°C
Maximum
30
10
ID
TA=70°C
C
S2
RθJA
RθJL
-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4832
30V Dual N-channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
55
TJ=55°C
5
100
nA
2.5
V
10.8
13
15.5
19
VGS=4.5V, ID=8A
14
17.5
mΩ
43
1
V
2.5
A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
1.9
VGS=10V, ID=10A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
A
mΩ
S
0.75
610
760
910
pF
VGS=0V, VDS=15V, f=1MHz
88
125
160
pF
40
70
100
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.6
2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
14
17
nC
Qg(4.5V) Total Gate Charge
5
6.6
8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=10A
2.4
nC
3
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
5.6
7
8
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
6.4
8
9.6
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
4.4
ns
9
ns
17
ns
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/6
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AO4832
30V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
VDS=5V
6V
80
5V
25
4.5V
20
ID (A)
60
ID(A)
7V
4V
15
40
125°C
10
3.5V
20
25°C
5
VGS=3V
0
0
1
2
3
4
0
0
5
20
2
3
4
5
Normalized On-Resistance
1.6
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
15
10
VGS=10V
VGS=10V
ID=10A
1.4
VGS=4.5V
ID=8A
17
5
2
10
100
150
1.2
1
0.8
5
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
125
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=10A
1.0E+01
25
40
125°C
20
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
15
25°C
1.0E-02
1.0E-03
10
25°C
1.0E-04
1.0E-05
5
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
125°C
1.0E-01
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4832
30V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=10A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
800
600
400
Coss
2
200
0
Crss
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
100
30
1000.0
TA=25°C
IAR (A) Peak Avalanche Current
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
TA=100°C
10
TA=125°C
TA=150°C
ID (Amps)
100.0
RDS(ON)
limited
10.0
10µs
100µs
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
0.0
1
1
0.01
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
VDS (Volts)
10
100
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4832
30V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4832
30V Dual N-channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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