AO4832 30V Dual N-channel MOSFET General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS 30V 10A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 13mΩ RDS(ON) (at VGS=4.5V) < 17.5mΩ D1 D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/6 Steady-State Steady-State ±20 V A 8 55 IAS, IAR 22 A EAS, EAR 24 mJ 2 W 1.3 TJ, TSTG Symbol t ≤ 10s Units V IDM PD TA=70°C Maximum 30 10 ID TA=70°C C S2 RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4832 30V Dual N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 55 TJ=55°C 5 100 nA 2.5 V 10.8 13 15.5 19 VGS=4.5V, ID=8A 14 17.5 mΩ 43 1 V 2.5 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.9 VGS=10V, ID=10A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max VDS=30V, VGS=0V IDSS RDS(ON) Typ A mΩ S 0.75 610 760 910 pF VGS=0V, VDS=15V, f=1MHz 88 125 160 pF 40 70 100 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17 nC Qg(4.5V) Total Gate Charge 5 6.6 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=10A 2.4 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 6.4 8 9.6 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/6 www.freescale.net.cn AO4832 30V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 6V 80 5V 25 4.5V 20 ID (A) 60 ID(A) 7V 4V 15 40 125°C 10 3.5V 20 25°C 5 VGS=3V 0 0 1 2 3 4 0 0 5 20 2 3 4 5 Normalized On-Resistance 1.6 VGS=4.5V RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 15 10 VGS=10V VGS=10V ID=10A 1.4 VGS=4.5V ID=8A 17 5 2 10 100 150 1.2 1 0.8 5 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 125 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=10A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 15 25°C 1.0E-02 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E-01 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4832 30V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=10A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 200 0 Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 100 30 1000.0 TA=25°C IAR (A) Peak Avalanche Current 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TA=100°C 10 TA=125°C TA=150°C ID (Amps) 100.0 RDS(ON) limited 10.0 10µs 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4832 30V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4832 30V Dual N-channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn