AO4854 30V Dual N-Channel MOSFET General Description The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. Features VDS ID (at VGS=10V) 30V 8A RDS(ON) (at VGS=10V) <19mΩ RDS(ON) (at VGS = 4.5V) < 23mΩ RDS(ON) (at VGS = 4V) < 26mΩ SOIC-8 D D Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/6 Steady-State Steady-State ±20 V A 6.5 48 IAS, IAR 19 A EAS, EAR 18 mJ 2 W 1.3 TJ, TSTG Symbol t ≤ 10s Units V IDM PD TA=70°C Maximum 30 8 ID TA=70°C S RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4854 30V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V Typ Max 30 Units V VDS=30V, VGS=0V 1 TJ=55°C 5 µA 10 µA 1.8 2.4 V 15.5 19 21 25 VGS=4.5V, ID=4A 18.5 23 mΩ VGS=4V, ID=4A 20.5 26 mΩ Forward Transconductance VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=8A RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ S 1 V 2.5 A pF 600 740 888 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC 2 2.5 3 nC 2 3 5 nC VGS=10V, VDS=15V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 5 ns 3.5 ns 19 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/6 www.freescale.net.cn AO4854 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V 25 VDS=5V 25 3.5V 20 ID(A) ID (A) 20 15 3V 10 15 125°C 10 5 5 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ ) 2 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 VGS=4V 5 ID=4A 1.2 2 10 VGS=4.5V ID=4A 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8A 35 1.0E+01 30 1.0E+00 25 IS (A) RDS(ON) (mΩ ) 40 125°C 1.0E-02 20 25°C 1.0E-03 15 1.0E-04 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E-01 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4854 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=30A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 Crss 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 100 TA=25°C 100.0 TA=100°C 10 ID (Amps) IAR (A) Peak Avalanche Current 800 100µs 1.0 0.1 TA=125°C TA=150°C RDS(ON) limited 10.0 1ms 10ms TJ(Max)=150°C TA=25°C 10s DC 0.0 1 0.01 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 0.000001 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4854 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4854 30V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn