AO8701, AO8701L P-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode General Description The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -4.2A RDS(ON) < 50mΩ (VGS = 10V) RDS(ON) < 65mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D S S G 1 2 3 4 8 7 6 5 VGS Gate-Source Voltage TA=25°C Continuous Drain CurrentA TA=70°C B A MOSFET TA=25°C A Continuous Forward Current TA=70°C B TA=70°C ±12 -4.2 V -3.5 A -30 IF Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Steady-State Steady-State t ≤ 10s Steady-State Steady-State PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V IFM TA=25°C Schottky -30 VKA Schottky reverse voltage 1/5 ID IDM Maximum Junction-to-Lead S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Pulsed Forward Current K K A A A TSSOP-8 Pulsed Drain Current D 30 3 V 2 A 1.4 40 1.4 1 1 -55 to 150 -55 to 150 °C Typ Max Units 73 90 96 63 125 75 75 90 97 63 125 W °C/W °C/W 75 www.freescale.net.cn AO8701, AO8701L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -0.7 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 VGS=-10V, ID=-4.2A Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 43 50 A 75 mΩ mΩ VGS=-2.5V, ID=-1A 82 120 mΩ VDS=-5V, ID=-5A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance V 65 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA -1.3 54 Forward Transconductance Output Capacitance ±100 VGS=-4.5V, ID=-4A gFS Coss µA -1 TJ=125°C VSD IS Units -1 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=-24V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A 7 11 -0.75 S -1 V -2.2 A 954 pF 115 pF 77 pF 6.1 Ω 9.4 nC 2 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 6.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω 3.2 ns 38.2 ns 12 ns IF=-4A, dI/dt=100A/µs 20.2 Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 11.2 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 0.45 0.5 VR=30V VR=30V, TJ=125°C 0.007 0.05 Irm 3.2 10 VR=30V, TJ=150°C 12 37 20 CT Maximum reverse leakage current Junction Capacitance VR=15V V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AO8701, AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 -10V VDS=-5V -4.5V 20 8 6 15 -ID(A) -ID (A) -3V -2.5V 10 VGS=-2V 5 125°C 4 25°C 2 0 0 0 1 2 3 4 5 0 120 Normalized On-Resistance RDS(ON) (mΩ) 1 1.6 100 VGS=-2.5V 80 60 VGS=-4.5V 40 VGS=-10V 20 1.5 2 2.5 3 ID=-5A VGS=-4.5V VGS=-10V 1.4 1.2 VGS=-2.5V ID=-2A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 170 1.0E+00 ID=-2A 1.0E-01 90 125°C 70 50 30 -IS (A) 130 110 50 75 100 125 150 175 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 190 150 RDS(ON) (mΩ) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 25°C 1.0E-05 1.0E-06 10 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING -VSD (Volts) -V (Volts) OUT OF SUCH APPLICATIONS ORGS USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 3/5 www.freescale.net.cn AO8701, AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-15V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 1 Coss 200 0 0 0 2 4 6 8 10 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10.0 5 10 15 TJ(Max)=150°C TA=25°C 40 RDS(ON) limited 100µs 10µs 25 30 TJ(Max)=150°C TA=25°C 30 1ms 0.1s 20 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) Crss 10ms 1.0 20 10 1s 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT 0.00001 0.0001 DEVICES 0.001 0.01 ARE NOT 0.1 10 ASSUME100 1000 COMPONENTS IN LIFE SUPPORT OR SYSTEMS AUTHORIZED.1AOS DOES NOT ANY LIABILITY ARISING PulseRESERVES Width (s) THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS Figure 11: Normalized Maximum Transient Thermal Impedance FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 4/5 www.freescale.net.cn AO8701,AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 Leakage Current (mA) 100 0.6 VF (Volts) 5 IF=3A 0.5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance 5/5 www.freescale.net.cn