SHENZHENFREESCALE AON6407

AON6407
30V P-Channel MOSFET
General Description
The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
-30
ID (at VGS= -10V)
-85A
RDS(ON) (at VGS= -10V)
< 4.5mΩ
RDS(ON) (at VGS = -6V)
< 6.0mΩ
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
A
-32
A
-25.5
Avalanche Current C
IAS
45
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
101
mJ
Power Dissipation B
Junction and Storage Temperature Range
7.3
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
TA=25°C
Power Dissipation A
1/6
V
-67
IDSM
TA=70°C
±25
-200
IDM
TA=25°C
Units
V
-85
ID
TC=100°C
C
Maximum
-30
-55 to 150
Typ
14
40
1.1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
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AON6407
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.6
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-200
TJ=55°C
nA
V
3.3
4.5
4.9
6.5
VGS=-6V, ID=-20A
4.4
6
mΩ
65
-1
V
-85
A
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
Gate Source Charge
Qgd
A
-0.69
VGS=-10V, VDS=-15V, ID=-20A
mΩ
S
3505
pF
900
pF
650
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
µA
-2.6
gFS
Crss
-5
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-2.1
VGS=-10V, ID=-20A
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
pF
4.6
9.2
Ω
75
105
nC
13
nC
Gate Drain Charge
23
nC
tD(on)
Turn-On DelayTime
14
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
VGS=-10V, VDS=-15V,
RL=0.75Ω, RGEN=3Ω
16
ns
94
ns
Turn-Off Fall Time
75
ns
IF=-20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
35
ns
nC
75
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides IaASsingle pulse rating.
G. The maximum current rating is package limited.
EAS
H. These tests are performed with the device mounted on 1 in2 FR-4 board with
2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON6407
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
-5V
VDS=-5V
-4V
80
-10V
60
60
-ID(A)
-ID (A)
80
-6V
40
125°C
40
-3.5V
20
20
25°C
VGS=-3.0V
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
1
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
7
Normalized On-Resistance
1.8
6
RDS(ON) (mΩ
Ω)
2
VGS=-6V
5
4
3
VGS=-10V
2
VGS=-10V
ID=-20A
1.6
1.4
1.2
VGS=-6V
ID=-20A
1
17
5
2
10
0.8
1
0
5
0
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=-20A
1.0E+01
10
40
EAS
4
-IS (A)
RDS(ON) (mΩ
Ω)
125°C
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
1.0E-05
0
2
3/6
1.0E+00
IAS
8
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6407
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=-15V
ID=-20A
4000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
3000
2000
2
1000
0
0
Coss
Crss
0
10
20
30
40
50
60
70
80
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
400
1000.0
TJ(Max)=150°C
TC=25°C
350
RDS(ON)
limited
10.0
300
100µs
250
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
1.0
10µs
Power (W)
10µs
100.0
-ID (Amps)
30
17
5
2
10
200
150
100
0.1
50
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
01
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
IAS
1
EAS
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON6407
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
100
TA=100°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
1
80
60
40
20
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
100
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
10000
TA=25°C
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0
0.0001
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.01
1
100
10000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
IAS
EAS
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON6407
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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