STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE � � � � � � 20V/5.0A, RDS(ON) = 50mΩ @VGS = 4.5V 20V/4.0A, RDS(ON) = 65mΩ @VGS = 2.5V 20V/2.8A, RDS(ON) = 90mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STN9926S8RG SOP-8 STN9926 STN9926S8TG SOP-8 STN9926 ※ Process Code : A ~ Z ; a ~ z ※ STN9926S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN9926S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 5.0 4.0 A IDM 30 A IS 1.6 A PD 2.8 1.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA 20 VGS(th) VDS=VGS,ID=250 uA 0.4 IGSS Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 1.0 V VDS=0V,VGS=±12V ±100 nA IDSS TJ=55℃ VDS=20V,VGS=0V 1 VDS=20V,VGS=0V 5 ID(on) VDS≦5V,VGS=4.5V Drain-source On-Resistance RDS(on) VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A VGS=1.8V,ID=2.8A Forward Tran Conductance gfs VDS=5.0V,ID=3.6A 10 Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.8 1.2 4.8 8.0 Gate Leakage Current 6 uA 0 0.004 0.050 0.055 0.065 0.075 0.090 A Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time td(on) Turn-Off Time tr td(off) VDS=6.0V,VGS=4.5V ID≡2.8A 1.0 nC 1.0 485 VDS=6.0V,VGS=0V f=1MHz 85 pF 40 VDD=15V,RL=15Ω ID=1A,VGEN=10V RG=6Ω tf 12 20 10 20 30 36 15 17 nS 3 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A TYPICAL CHARACTERICTICS (25℃ Unless Note) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A TYPICAL CHARACTERICTICS (25℃ Unless Note) 5 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A TYPICAL CHARACTERICTICS (25℃ Unless Note) TYPICAL CHARACTERICTICS (P MOS) 6 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1 STN9926 Dual N Channel Enhancement Mode MOSFET 5A SOP-8 PACKAGE OUTLINE 7 120 Bentley Square, Mountain View, Ca 94040 USA www.syonsontech.com Copyright © 2007, Stanson Corp. STN9926 2007. V1