STANSON STN9926

STN9926
Dual N Channel Enhancement Mode MOSFET
5A
DESCRIPTION
The STN9926 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer
power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION
SOP-8
FEATURE
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20V/5.0A, RDS(ON) = 50mΩ
@VGS = 4.5V
20V/4.0A, RDS(ON) = 65mΩ
@VGS = 2.5V
20V/2.8A, RDS(ON) = 90mΩ
@VGS = 1.8V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
Part Marking
STN9926S8RG
SOP-8
STN9926
STN9926S8TG
SOP-8
STN9926
※ Process Code : A ~ Z ; a ~ z
※ STN9926S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STN9926S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
1
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
5.0
4.0
A
IDM
30
A
IS
1.6
A
PD
2.8
1.8
W
TJ
-55/150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
105
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS=0V,ID=250uA
20
VGS(th)
VDS=VGS,ID=250 uA
0.4
IGSS
Zero Gate Voltage Drain
Current
On-State Drain Current
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V
1.0
V
VDS=0V,VGS=±12V
±100
nA
IDSS
TJ=55℃
VDS=20V,VGS=0V
1
VDS=20V,VGS=0V
5
ID(on)
VDS≦5V,VGS=4.5V
Drain-source On-Resistance
RDS(on)
VGS=4.5V, ID=5.0A
VGS=2.5V, ID=4.0A
VGS=1.8V,ID=2.8A
Forward Tran Conductance
gfs
VDS=5.0V,ID=3.6A
10
Diode Forward Voltage
VSD
IS=1.6A,VGS=0V
0.8
1.2
4.8
8.0
Gate Leakage Current
6
uA
0
0.004 0.050
0.055 0.065
0.075 0.090
A
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse TransferCapacitance
Crss
Turn-On Time
td(on)
Turn-Off Time
tr
td(off)
VDS=6.0V,VGS=4.5V
ID≡2.8A
1.0
nC
1.0
485
VDS=6.0V,VGS=0V
f=1MHz
85
pF
40
VDD=15V,RL=15Ω
ID=1A,VGEN=10V
RG=6Ω
tf
12
20
10
20
30
36
15
17
nS
3
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
4
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
5
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
TYPICAL CHARACTERICTICS (P MOS)
6
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1
STN9926
Dual N Channel Enhancement Mode MOSFET
5A
SOP-8 PACKAGE OUTLINE
7
120 Bentley Square, Mountain View, Ca 94040 USA
www.syonsontech.com
Copyright © 2007, Stanson Corp.
STN9926 2007. V1