STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z z z z z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STN4920S8RG SOP-8 STN4920 STN4920S8TG SOP-8 STN4920 ※ Process Code : A ~ Z ; a ~ z ※ STN4920S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN4920S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 7.2 6.0 A IDM 20 A IS 1.7 A PD 2.8 1.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 65 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250 uA 1.0 IGSS Zero Gate Voltage Drain Current On-State Drain Current Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 3.0 V VDS=0V,VGS=±20V ±100 nA IDSS TJ=55℃ VDS=30V,VGS=0V 1 VDS=30V,VGS=0V 5 ID(on) VDS≥5V,VGS=4.5V Drain-source On-Resistance RDS(on) VGS=10V, ID=7.2A VGS=4.5V, ID=6.0A Forward Tran Conductance gfs VDS=15.0V,ID=6.2A 13 Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 Gate Leakage Current uA A 20 0.022 0.028 0.030 0.036 Ω S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.5 Input Capacitance Ciss 450 Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time td(on) Turn-Off Time tr td(off) VDS=15V,VGS=10V ID=7.2A VDS=15.0V,VGS=0V f=1MHz 30 7.5 nC pF 240 38 VDD=15V,RL=15Ω ID=1A,VGEN=10V RG=6Ω tf 12 20 10 20 60 90 15 30 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1