SPN6001 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6001 is the N-Channel enhancement mode field effect transistors that are produced using high cell density DMOS technology. APPLICATIONS High efficiency SMPS AC adapter Electronic Lamp Ballast FEATURES 600V/1.0A , RDS(ON)= 15Ω@VGS=10V TO-92 package design Fast switch, Low Ciss, Low gate charge PIN CONFIGURATION(TO-92) PART MARKING 2012/07/12 Ver.1 Page 1 SPN6001 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D Drain 3 S Source Part Number Package Part Marking SPN6001T92AGB TO-92 SPN6001 ORDERING INFORMATION ※ Week Code : 01~53 ※ SPN6001T92AGB : Tape Ammo ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 600 V Gate –Source Voltage - Continuous VGSS ±20 V Gate –Source Voltage - Non Repetitive ( tp < 50µs) VGSS ±40 V ID 1 A IDM 2.5 A PD 3 W TJ -55 ~ 150 ℃ Storage Temperature Range TSTG -55 ~ 150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W Continuous Drain Current(TJ=150℃) TA=25℃ Pulsed Drain Current (∗ ∗) Power Dissipation TA=25℃ Operating Junction Temperature (∗ ∗) Pulse width limited by safe operating area 2012/07/12 Ver.1 Page 2 SPN6001 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Conditions Min. V(BR)DSS VGS=0V,ID=250uA 600 Symbol Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2.0 4.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=480V, VGS=0V 10 uA 15 Ω 1 V Drain-Source On-Resistance RDS(on) VGS=10V, ID=500mA Forward On Voltage VSD VGS=0V, ID=500mA Forward Transconductance Gfs VDS = 40 V, ID = 500 mA 0.8 S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss 6.1 VDD = 480 V, ID = 1 A, VGS = 10 V 3.0 VDS = 25 V, f = 1 MHz, VGS = 0 178 221 19 27 4.8 Coss Reverse Transfer Capacitance Crss 3.7 td(on) 15 Turn-Off Time tr td(off) nC 1.0 Output Capacitance Turn-On Time 7.2 VDD = 300 V, ID = 1 A RG = 25Ω tf 46 ns 26 37 (1) Pulsed: Pulse duration = 300 µs, duty cycle 2 %. (2) Pulse width limited by maximum junction temperature. 2012/07/12 Ver.1 pF Page 3 SPN6001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 1 Typical Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 BVdss vs Junction Temperature Fig. 4 On-Resistance vs Junction Temperature Fig. 5 Forward Characteristic of Reverse Diode Fig. 6 On-Resistance vs Drain Current 2012/07/12 Ver.1 Page 4 SPN6001 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Fig. 7 Gate Charge Characteristics Fig. 8 Typical Capacitance Characteristics Fig. 9 Maximum Safe Operation Area Fig. 10 Effective Transient Thermal Impedance 2012/07/12 Ver.1 Page 5 SPN6001 N-Channel Enhancement Mode MOSFET TO-92 PACKAGE OUTLINE Dimension in mm 2012/07/12 Ver.1 Page 6 SPN6001 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2011 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1 Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/07/12 Ver.1 Page 7