2SD1913 2SD1913 - Thinki Semiconductor Co.,Ltd.

2SD1913
®
Pb
2SD1913
Pb Free Plating Product
60V/3A NPN Low-Frequency Epitaxial Planar Silicon Transistor
TO-220FH/ITO-220AB
DESCRIPTION
·Complements the 2SB1274.
・High reliability.
・High breakdown voltage.
・Low saturation voltage.
・Wide area of safe operation.
Unit:mm
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
3
12
TO-220FH
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3
A
ICM
Collector current-peak
8
A
PC
Collector dissipation
TC=25℃
20
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
2SD1913
®
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
60
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
60
V
V(BR)EBO
Base-emitter breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=2A ; IB=0.2A
0.4
1.0
V
VBE
Base-emitter voltage
IC=0.5A ; VCE=5V
0.8
1.0
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V;IC=0
0.1
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
70
hFE-2
DC current gain
IC=3A ; VCE=5V
20
fT
Transition frequency
IC=0.5A ; VCE=5V
100
MHz
Cob
Output capacitance
IE=0 ; VCB=10V; f=1MHz
40
pF
VCEsat
280
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/