Product specification IRFML8244TRPbF VDS 25 V VGS Max ± 20 V 24 m 41 m RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET® Power MOSFET * ' 6 Micro3TM (SOT-23) IRFML8244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low RDS(on) ( 24m) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 25 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 5.8 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.6 IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation 1.25 PD @TA = 70°C Maximum Power Dissipation 0.80 A 24 W Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRFML8244TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current 25 ––– ––– ––– 0.02 ––– ––– 20 24 ––– 32 41 1.35 1.7 2.35 ––– ––– 1.0 ––– ––– 150 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA m V μA VGS = 4.5V, ID VDS = VGS, ID = 10μA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.6 ––– gfs Qg Forward Transconductance 10 ––– ––– S ––– 5.4 ––– Qgs Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 0.81 ––– VGS = 10V td(on) Turn-On Delay Time ––– 2.7 ––– VDD tr Rise Time ––– 2.1 ––– td(off) Turn-Off Delay Time ––– 9.0 ––– tf Fall Time ––– 2.9 ––– Ciss Input Capacitance ––– 430 ––– Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 49 ––– Total Gate Charge nA d = 4.6A d VGS = 10V, ID = 5.8A VGS = 20V VGS = -20V VDS = 10V, ID = 5.8A ID = 5.8A nC ns VDS =13V d d =13V ID = 1.0A RG = 6.8 VGS = 10V VGS = 0V pF VDS = 10V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min. Typ. Max. Units ––– ––– 1.25 A ––– 24 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.2 V trr Reverse Recovery Time ––– 11 17 ns Qrr Reverse Recovery Charge ––– 4.2 6.3 nC http://www.twtysemi.com [email protected] Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 5.8A, VGS = 0V TJ = 25°C, VR = 20V, IF=5.8A di/dt = 100A/μs d d 2 of 2