Product specification IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS(on) max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET® Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 5.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.3 IDM Pulsed Drain Current 21 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 20 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML0030TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS 30 ––– ––– ––– 0.02 ––– ––– 33 40 ––– 22 27 1.3 1.7 2.3 ––– ––– 1 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Drain-to-Source Leakage Current V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ V μA nA d = 5.2A d VGS = 4.5V, ID = 4.2A VGS = 10V, ID VDS = VGS, ID = 25μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.3 ––– Ω gfs Qg Forward Transconductance 9.5 ––– ––– S Total Gate Charge ––– 2.6 ––– Qgs Gate-to-Source Charge ––– 0.8 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 ––– td(on) Turn-On Delay Time ––– 5.2 ––– VDD tr Rise Time ––– 4.4 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 7.4 ––– tf Fall Time ––– 4.4 ––– VGS = 4.5V Ciss Input Capacitance ––– 382 ––– VGS = 0V Coss Output Capacitance ––– 84 ––– Crss Reverse Transfer Capacitance ––– 39 ––– VDS = 10V, ID = 5.2A ID = 5.2A nC VDS =15V d d =15V VGS = 4.5V ns pF RG = 6.8Ω VDS = 15V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current c Min. Typ. Max. Units ––– ––– 1.6 A ––– 21 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V trr Reverse Recovery Time ––– 11 17 ns Qrr Reverse Recovery Charge ––– 4.0 6.0 nC http://www.twtysemi.com [email protected] Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 1.6A, VGS = 0V d TJ = 25°C, VR = 15V, IF=1.6A di/dt = 100A/μs d 2 of 2