KEXIN KDS8928A

Transistors
IC
SMD Type
Dual N & P-Channel Enhancement
Mode Field Effect Transistor
KDS8928A
Features
N-Channel
5.5 A, 30 V
RDS(ON) = 0.030
RDS(ON) = 0.038
@ VGS = 4.5V
@ VGS =2.5V
P-Channel
-4 A, -20 V RDS(ON) = 0.055
RDS(ON) = 0.070
@ VGS =- 4.5 V
@ VGS =-2.5V
High density cell design for extremely low RDS(ON).
High power and handling capability in a widely
used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package.
Absolute Maximum Ratings Ta = 25
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
Parameter
VDSS
30
30
V
Gate to Source Voltage
VGS
8
-8
V
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation
PD
A
-20
A
2
PD
1
TJ, TSTG
-55 to 150
W
W
0.9
(Note 1c)
Operating and Storage Temperature
-4
20
1.6
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
5.5
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
78
/W
Thermal Resistance Junction to Case
R
JC
40
/W
(Note 1)
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Transistors
IC
SMD Type
KDS8928A
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
VGS(th)
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Testconditons
Symbol
A, Referenced to 25
Static Drain-Source On-Resistance
RDS(on)
On-State Drain Current
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
2
ID(on)
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Qgd
-20
N-Ch
32
P-Ch
-23
mV/
1
P-Ch
-1
VGS =
8V, VDS = 0 V
N-Ch
100
VGS =
8 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
A
A, Referenced to 25
A, Referenced to 25
VGS = 4.5 V, ID =5.5A
N-Ch
0.4
0.67
P-Ch
-0.4
-0.6
N-Ch
-3
P-Ch
4
0.025
N-Ch
VGS = 2.5 V, ID = 4.5A
VGS = -4.5 V, ID =-4 A
VGS = -2.5 V, ID =-3.4 A
.059
N-Ch
20
VGS = -4.5 V, VDS = -5V
P-Ch
-20
0.03
VDS = 5V, ID = 5.5A
N-Ch
20
P-Ch
13
N-Channel
N-Ch
900
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
P-Ch
1130
0.072
S
pF
N-Ch
410
P-Channel
P-Ch
480
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
110
P-Ch
120
N-Channel
N-Ch
6
12
VDD = 6 V, ID = 1 A,
P-Ch
8
16
pF
pF
N-Ch
19
31
P-Ch
23
37
P-Channel
N-Ch
42
67
VDD = -10 V, ID = -1 A,
P-Ch
260
360
N-Ch
13
24
P-Ch
90
125
N-Channel
N-Ch
19.8
28
VDS =10V,ID=5.5A,VGS=4.5V(Note 2)
P-Ch
20
28
VGS = -4.5 V, RGEN = 6
(Note 2)
(Note 2)
m
A
VDS = -5V, ID = -4A
VGS = 4.5 V, RGEN = 6
nA
mV/
0.043 0.055
VGS = 4.5 V, VDS = 5V
A
V
0.031 0.038
P-Ch
Unit
V
N-Ch
ID = -250
RDS(on)
30
P-Ch
Max
VDS = -16 V, VGS = 0 V
ID = 250
Static Drain-Source On-Resistance
N-Ch
Typ
VDS = 24V, VGS = 0 V
VDS = VGS, ID = -250
Gate Threshold Voltage Temperature
Coefficient
Min
N-Ch
2
P-Channel
P-Ch
2.8
VDS=-5V,ID=-4A,VGS=-5V(Note 2)
N-Ch
6.3
P-Ch
3.2
ns
ns
ns
ns
nC
nC
nC
Transistors
IC
SMD Type
KDS8928A
Electrical Characteristics Ta = 25
Parameter
Symbol
Maximum Continuous Drain-Source
Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
Testconditons
Min
Typ
Max
N-Ch
1.3
P-Ch
-1.3
VGS = 0 V, IS = 1.3A (Not 2)
N-Ch
0.68
1.2
VGS = 0 V, IS = -1.3A (Not 2)
P-Ch
-0.7
-1.2
Unit
A
V
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