Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 30 30 V Gate to Source Voltage VGS 8 -8 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation PD A -20 A 2 PD 1 TJ, TSTG -55 to 150 W W 0.9 (Note 1c) Operating and Storage Temperature -4 20 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) 5.5 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W (Note 1) www.kexin.com.cn 1 Transistors IC SMD Type KDS8928A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol A, Referenced to 25 Static Drain-Source On-Resistance RDS(on) On-State Drain Current Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge 2 ID(on) www.kexin.com.cn Qgd -20 N-Ch 32 P-Ch -23 mV/ 1 P-Ch -1 VGS = 8V, VDS = 0 V N-Ch 100 VGS = 8 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A A A, Referenced to 25 A, Referenced to 25 VGS = 4.5 V, ID =5.5A N-Ch 0.4 0.67 P-Ch -0.4 -0.6 N-Ch -3 P-Ch 4 0.025 N-Ch VGS = 2.5 V, ID = 4.5A VGS = -4.5 V, ID =-4 A VGS = -2.5 V, ID =-3.4 A .059 N-Ch 20 VGS = -4.5 V, VDS = -5V P-Ch -20 0.03 VDS = 5V, ID = 5.5A N-Ch 20 P-Ch 13 N-Channel N-Ch 900 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 1130 0.072 S pF N-Ch 410 P-Channel P-Ch 480 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 110 P-Ch 120 N-Channel N-Ch 6 12 VDD = 6 V, ID = 1 A, P-Ch 8 16 pF pF N-Ch 19 31 P-Ch 23 37 P-Channel N-Ch 42 67 VDD = -10 V, ID = -1 A, P-Ch 260 360 N-Ch 13 24 P-Ch 90 125 N-Channel N-Ch 19.8 28 VDS =10V,ID=5.5A,VGS=4.5V(Note 2) P-Ch 20 28 VGS = -4.5 V, RGEN = 6 (Note 2) (Note 2) m A VDS = -5V, ID = -4A VGS = 4.5 V, RGEN = 6 nA mV/ 0.043 0.055 VGS = 4.5 V, VDS = 5V A V 0.031 0.038 P-Ch Unit V N-Ch ID = -250 RDS(on) 30 P-Ch Max VDS = -16 V, VGS = 0 V ID = 250 Static Drain-Source On-Resistance N-Ch Typ VDS = 24V, VGS = 0 V VDS = VGS, ID = -250 Gate Threshold Voltage Temperature Coefficient Min N-Ch 2 P-Channel P-Ch 2.8 VDS=-5V,ID=-4A,VGS=-5V(Note 2) N-Ch 6.3 P-Ch 3.2 ns ns ns ns nC nC nC Transistors IC SMD Type KDS8928A Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD Testconditons Min Typ Max N-Ch 1.3 P-Ch -1.3 VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.68 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch -0.7 -1.2 Unit A V www.kexin.com.cn 3