Transistors IC SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532ADY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range 10 sec 30 Unit Steady State -30 V 20 20 V 4.9 3.7 -3.9 -3 A 3.9 2.9 -3.1 -2.4 A 1.7 0.94 -1.7 -1 A 2 1.13 2 1.2 W 1.3 0.73 1.3 0.76 W 20 IDM Continuous Source Current (Diode Conduction)* P-Channel Steady State A -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Symbol t Maximum Junction-to-Ambient* 10 sec RthJA Steady State Maximum Junction-to-Foot Steady State RthJc N-Channel P-Channel Typ Max Typ Max 55 62.5 54 62.5 90 110 87 105 40 50 34 45 Unit /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI4532ADY Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time 2 IDSS ID(on) On State Drain Currenta * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol trr Min VDS = VGS, ID = 250 A N-Ch 1 VDS = VGS, ID = -250 P-Ch -1 A Typ Max V VDS = 0 V VGS = 20 V N-Ch 100 VDS = 0 V VGS = 20 V P-Ch 100 VDS = 30V, VGS = 0 V N-Ch 1 VDS = -30V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -30V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 20 VDS -5 V, VGS = -10 V P-Ch -20 N-Ch VGS = -10 V, ID = -3.9A P-Ch 0.062 0.080 VGS = 4.5 V, ID = 4.1A N-Ch 0.062 0.075 VGS = -4.5 V, ID = -3.0A P-Ch 0.105 0.135 VDS = 15 V, ID = 4.9A N-Ch 11 VDS = -15 V, ID = -2.5A P-Ch 5 IS = 1.7A, VGS = 0 V N-Ch 0.80 1.2 IS = -1.7A, VGS = 0 V P-Ch -0.82 -1.2 N-Channel N-Ch 8 16 VDS = 10 V, VGS = 10V, ID = 4.9A P-Ch 10 20 N-Ch 1.4 P-Channel P-Ch 2 VDS = -10 V, VGS = -10 V, ID = -3.9A N-Ch 1.2 P-Ch 1.9 N-Ch 12 20 15 S P-Ch 8 N-Ch 10 20 P-Ch 9 18 P-Channel N-Ch 23 45 VDD = -10 V, RL = 10 P-Ch 21 40 ID= -1 A, VGEN = -10 V, Rg = 6 N-Ch 8 15 P-Ch 10 20 N-Ch 25 40 P-Ch 27 40 IF = -1.7 A, di/dt = 100 A/ 300 s, duty cycle 2%. s V nC VDD = 10 V, RL = 10 s A 0.044 0.053 ID= 1A, VGEN = 10V, Rg = 6 IF = 1.7 A, di/dt = 100 A/ nA A VGS = 10 V, ID = 4.9A N Channel Unit ns