KEXIN KI4532ADY

Transistors
IC
SMD Type
N- and P-Channel 30-V (D-S) MOSFET
KI4532ADY
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
10 sec
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 70
Pulsed Drain Current
Maximum Power Dissipation*
TA = 25
IS
PD
TA = 70
Operating Junction and Storage Temperature Range
10 sec
30
Unit
Steady State
-30
V
20
20
V
4.9
3.7
-3.9
-3
A
3.9
2.9
-3.1
-2.4
A
1.7
0.94
-1.7
-1
A
2
1.13
2
1.2
W
1.3
0.73
1.3
0.76
W
20
IDM
Continuous Source Current (Diode Conduction)*
P-Channel
Steady State
A
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings TA = 25
Parameter
Symbol
t
Maximum Junction-to-Ambient*
10 sec
RthJA
Steady State
Maximum Junction-to-Foot
Steady State
RthJc
N-Channel
P-Channel
Typ
Max
Typ
Max
55
62.5
54
62.5
90
110
87
105
40
50
34
45
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
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1
Transistors
IC
SMD Type
KI4532ADY
Electrical Characteristics TJ = 25
Parameter
VGS( th)
Gate Threshold Voltage
IGSS
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain Source On State Resistance*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
Rise Time
tr
Turn Off Delay Time
td( off)
Fall Time
tf
Source-Drain Reverse Recovery Time
2
IDSS
ID(on)
On State Drain Currenta
* Pulse test; pulse width
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Testconditons
Symbol
trr
Min
VDS = VGS, ID = 250 A
N-Ch
1
VDS = VGS, ID = -250
P-Ch
-1
A
Typ
Max
V
VDS = 0 V VGS = 20 V
N-Ch
100
VDS = 0 V VGS = 20 V
P-Ch
100
VDS = 30V, VGS = 0 V
N-Ch
1
VDS = -30V, VGS = 0 V
P-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55
N-Ch
5
VDS = -30V, VGS = 0 V, TJ = 55
P-Ch
-5
VDS
5 V, VGS = 10 V
N-Ch
20
VDS
-5 V, VGS = -10 V
P-Ch
-20
N-Ch
VGS = -10 V, ID = -3.9A
P-Ch
0.062 0.080
VGS = 4.5 V, ID = 4.1A
N-Ch
0.062 0.075
VGS = -4.5 V, ID = -3.0A
P-Ch
0.105 0.135
VDS = 15 V, ID = 4.9A
N-Ch
11
VDS = -15 V, ID = -2.5A
P-Ch
5
IS = 1.7A, VGS = 0 V
N-Ch
0.80
1.2
IS = -1.7A, VGS = 0 V
P-Ch
-0.82
-1.2
N-Channel
N-Ch
8
16
VDS = 10 V, VGS = 10V, ID = 4.9A
P-Ch
10
20
N-Ch
1.4
P-Channel
P-Ch
2
VDS = -10 V, VGS = -10 V, ID = -3.9A
N-Ch
1.2
P-Ch
1.9
N-Ch
12
20
15
S
P-Ch
8
N-Ch
10
20
P-Ch
9
18
P-Channel
N-Ch
23
45
VDD = -10 V, RL = 10
P-Ch
21
40
ID= -1 A, VGEN = -10 V, Rg = 6
N-Ch
8
15
P-Ch
10
20
N-Ch
25
40
P-Ch
27
40
IF = -1.7 A, di/dt = 100 A/
300 s, duty cycle 2%.
s
V
nC
VDD = 10 V, RL = 10
s
A
0.044 0.053
ID= 1A, VGEN = 10V, Rg = 6
IF = 1.7 A, di/dt = 100 A/
nA
A
VGS = 10 V, ID = 4.9A
N Channel
Unit
ns