IC
IC
SMD Type
HEXFET Power MOSFET
KRF7307
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25
ID
5.7
-4.7
Continuous Drain Current VGS @ 4.5V Ta = 25
ID
5.2
-4.3
Continuous Drain Current VGS @ 4.5V Ta = 70
ID
4.1
-3.4
Pulsed Drain Current *1
IDM
21
Power Dissipation
PD
@Ta= 25
W
0.016
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
5.0
R
W/
-5.0
12
V/ ns
V
-55 to + 150
TJ, TSTG
Maximum Junction-to-Ambient*3
A
-17
2.0
Linear Derating Factor (PCB Mount)
Unit
62.5
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
P-Channel ISD
2.6A, di/dt
-2.2A, di/dt
100A/
s, VDD
V(BR)DSS, TJ
150
50A/
s, VDD
V(BR)DSS, TJ
150
*3 Surface mounted on FR-4 board, t
10sec.
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IC
IC
SMD Type
KRF7307
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Testconditons
Symbol
VGS = 0V, ID = 250 A
N-Ch
20
P-Ch
-20
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.044
TJ
ID = -1mA,Reference to 25
P-Ch
-0.012
RDS(on)
VGS = 2.7V, ID = 2.2A*1
VGS = -4.5V, ID = -2.2A*1
VGS = -2.7V, ID = -1.8A*1
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
VGS(th)
gfs
IDSS
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
2
IGSS
tr
td(off)
Fall Time
tf
Internal Drain Inductace
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
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Max
V/
0.050
N-Ch
0.070
0.090
P-Ch
0.140
N-Ch
0.70
VDS = VGS, ID = -250 A
P-Ch
-0.70
VDS =15V, ID = 2.6A*1
N-Ch
8.30
VDS = -15V, ID = -2.2A*1
P-Ch
4.00
VDS = 16V, VGS = 0V
N-Ch
1.0
VDS = -16V, VGS = 0V
P-Ch
-1.0
VDS = 16V, VGS = 0V, TJ = 125
N-Ch
25
P-Ch
-25
VGS =
12V
V
S
N-Ch
100
P-Ch
100
N-Channel
N-Ch
20
ID =2.6A,VDS = 16V,VGS =4.5V *1
P-Ch
22
N-Ch
2.2
P-Channel
P-Ch
3.3
ID = -2.2A,VDS = -16V,VGS = -4.5V *1
N-Ch
8.0
P-Ch
9.0
N-Channel
N-Ch
9.0
VDD = 10V,ID = 2.6A,RG = 6.0
P-Ch
8.4
RD = 3.8
N-Ch
42
P-Channel
P-Ch
26
VDD = -10V,ID = -2.2A,RG = 6.0
N-Ch
32
P-Ch
51
*1
RD = 4.5 1*1
Unit
V
VDS = VGS, ID = 250 A
VDS = -16V, VGS = 0V, TJ = 125
Gate-to-Source Forward Leakage
Typ
VGS = 0V, ID = -250 A
V(BR)DSS
VGS = 4.5V, ID = 2.6A*1
Static Drain-to-Source On-Resistance
Min
N-Ch
51
P-Ch
33
N-Ch
4.0
Between lead tip
P-Ch
4.0
and center of die contact
N-Ch
6.0
P-Ch
6.0
N-Channel
N-Ch
660
VGS = 0V,VDS = 15V,f = 1.0MHz *1
P-Ch
610
N-Ch
280
P-Channel
P-Ch
310
VGS = 0V,VDS = -15V,f = 1.0MHz *1
N-Ch
140
P-Ch
170
A
nA
nC
ns
nH
pF
IC
IC
SMD Type
KRF7307
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
Forward Turn-On Time
ton
300 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
2.5
P-Ch
-2.5
N-Ch
21
P-Ch
-17
TJ = 25 , IS = 1.8A, VGS = 0V*1
N-Ch
1.0
TJ = 25 , IS = -1.8A, VGS = 0V*1
P-Ch
-1.0
N-Channel
N-Ch
29
44
TJ = 25 , IF =2.6A,di/dt = 100A/
P-Ch
56
84
s*1
P-Channel
TJ=25 , IF=-2.2A,di/dt=-100A/
s*1
Intrinsic turn-on time is neglegible
(turn-on is dominated by LS+LD)
N-Ch
22
33
P-Ch
71
110
Unit
A
V
ns
nC
N-Ch
P-Ch
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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