Product specification QM3007K P-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3007K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM3007K meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDSON ID -30V 70mΩ -3.2A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge D z Excellent CdV/dt effect decline z Green Device Available G Absolute Maximum Ratings S Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ID@TA=25℃ ±20 V 1 -3.2 A 1 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V -2.5 A IDM Pulsed Drain Current2 -13 A 3 PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 http://www.twtysemi.com [email protected] 1 Typ. Max. Unit --- 125 ℃/W --- 80 ℃/W 1 of 2 Product specification QM3007K P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ VGS=-10V , ID=-3A --- 55 70 VGS=-4.5V , ID=-1.5A --- 90 120 -1.0 -1.5 -2.5 V --- 4.32 --- mV/℃ VGS=VDS , ID =-250uA mΩ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 4.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 48 Ω Qg Total Gate Charge (-4.5V) --- 5.22 7.3 Qgs Gate-Source Charge --- 1.25 1.8 Qgd Gate-Drain Charge --- 2.3 3.2 Turn-On Delay Time --- 18.4 37 Td(on) VDS=-20V , VGS=-4.5V , ID=-3A uA nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω --- 11.4 21 Turn-Off Delay Time ID=-1A --- 39.4 79 Fall Time --- 5.2 10.4 Ciss Input Capacitance --- 463 650 Coss Output Capacitance --- 82 115 Crss Reverse Transfer Capacitance --- 68 95 Min. Typ. Max. Unit --- --- -3.2 A --- --- -13 A --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current VSD 2,4 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.twtysemi.com [email protected] 2 of 2