Product specification WPM2026 Single P-Channel, -20V, -3.2A, Power MOSFET VDS (V) Rds(on) () 0.056@ VGS=̢4.5V 0.069@ VGS=̢2.5V -20 0.086@ VGS=̢1.8V SOT-23 Descriptions D 3 The WPM2026 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. 1 2 Standard Product WPM2026 is Pb-free. G S Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 W26* 2 1 W26 = Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device WPM2026-3/TR http://www.twtysemi.com [email protected] Package Shipping SOT-23 3000/Reel&Tape 1 of 3 Product specification WPM2026 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID PD ID PD Unit V -3.2 -2.9 -2.6 -2.3 0.9 0.8 0.6 0.5 -2.9 -2.7 -2.3 -2.1 0.7 0.6 0.5 0.4 A W A W Pulsed Drain Current c IDM -12 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State RJA RJA Typical Maximum 105 130 120 155 130 160 145 190 40 60 RJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. http://www.twtysemi.com [email protected] Unit °C/W 2 of 3 Product specification WPM2026 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±V ±100 nA VGS(TH) VGS = VDS, ID = -250uA -0.6 -1.0 V VGS = -4.5V, ID = -3.2A 56 65 VGS = -2.5V, ID = -2.8A 69 81 VGS = -1.8V, ID = -2.3A 86 110 VDS = -5 V, ID = -3.6A 10 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -0.35 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 11 Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.6 Gate-to-Source Charge QGS ID = -2.7A 1.3 Gate-to-Drain Charge QGD 2.7 Turn-On Delay Time td(ON) 16 Rise Time tr VGS = -4.5 V, VDD = -10 V, 20 Turn-Off Delay Time td(OFF) RL=3.5 , R G=6 65 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = -10 V 1130 pF 120 nC SWITCHING CHARACTERISTICS ns 15 BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = -1.0A [email protected] -0.62 -1.5 V 3 of 3