TYSEMI WPM2026-3

Product specification
WPM2026
Single P-Channel, -20V, -3.2A, Power MOSFET
VDS (V)
Rds(on) ()
[email protected] VGS=̢4.5V
[email protected] VGS=̢2.5V
-20
[email protected] VGS=̢1.8V
SOT-23
Descriptions
D
3
The WPM2026 is P-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
technology and design to provide excellent RDS
(ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
1
2
Standard Product WPM2026 is Pb-free.
G
S
Pin configuration (Top view)
Features
3
z
Trench Technology
z
Supper high density cell design
z
Excellent ON resistance for higher DC current
z
Extremely Low Threshold Voltage
z
Small package SOT-23
W26*
2
1
W26 = Device Code
*
= Month (A~Z)
Marking
Applications
Order information
z
Driver for Relay, Solenoid, Motor, LED etc.
z
DC-DC converter circuit
z
Power Switch
z
Load Switch
z
Charging
Device
WPM2026-3/TR
http://www.twtysemi.com
[email protected]
Package
Shipping
SOT-23 3000/Reel&Tape
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Product specification
WPM2026
Absolute Maximum ratings
Parameter
Symbol
10 S
Steady State
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±
TA=25°C
Continuous Drain Current a
TA=70°C
TA=25°C
Maximum Power Dissipation a
TA=70°C
TA=25°C
Continuous Drain Current b
TA=70°C
TA=25°C
Maximum Power Dissipation b
TA=70°C
ID
PD
ID
PD
Unit
V
-3.2
-2.9
-2.6
-2.3
0.9
0.8
0.6
0.5
-2.9
-2.7
-2.3
-2.1
0.7
0.6
0.5
0.4
A
W
A
W
Pulsed Drain Current c
IDM
-12
A
Operating Junction Temperature
TJ
150
°C
Lead Temperature
TL
260
°C
Storage Temperature Range
Tstg
-55 to 150
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
Symbol
t 10 s
Steady State
t 10 s
Steady State
Steady State
RJA
RJA
Typical
Maximum
105
130
120
155
130
160
145
190
40
60
RJC
a
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b
Surface mounted on FR4 board using minimum pad size, 1oz copper
c
Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d
Repetitive rating, pulse width limited by junction temperature TJ=150°C.
http://www.twtysemi.com
[email protected]
Unit
°C/W
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Product specification
WPM2026
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = -250uA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS =-16 V, VGS = 0V
-1
uA
Gate-to-source Leakage Current
IGSS
VDS = 0 V, VGS = ±V
±100
nA
VGS(TH)
VGS = VDS, ID = -250uA
-0.6
-1.0
V
VGS = -4.5V, ID = -3.2A
56
65
VGS = -2.5V, ID = -2.8A
69
81
VGS = -1.8V, ID = -2.3A
86
110
VDS = -5 V, ID = -3.6A
10
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
RDS(on)
gFS
-0.35
m
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
115
Total Gate Charge
QG(TOT)
11
Threshold Gate Charge
QG(TH)
VGS = -4.5 V, VDS = -10 V,
0.6
Gate-to-Source Charge
QGS
ID = -2.7A
1.3
Gate-to-Drain Charge
QGD
2.7
Turn-On Delay Time
td(ON)
16
Rise Time
tr
VGS = -4.5 V, VDD = -10 V,
20
Turn-Off Delay Time
td(OFF)
RL=3.5 , R G=6 65
Fall Time
tf
VGS = 0 V, f = 1.0 MHz, VDS =
-10 V
1130
pF
120
nC
SWITCHING CHARACTERISTICS
ns
15
BODY DIODE CHARACTERISTICS
Forward Voltage
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VSD
VGS = 0 V, IS = -1.0A
[email protected]ysemi.com
-0.62
-1.5
V
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