SMD Type Product specification NTR3162P Power MOSFET −20 V, −3.6 A, Single P−Channel, SOT−23 Features • • • • Low RDS(on) at Low Gate Voltage −0.3 V Low Threshold Voltage Fast Switching Speed This is a Pb−Free Device V(BR)DSS RDS(on) MAX ID MAX 70 mW @ −4.5 V −2.2 A 95 mW @ −2.5 V −1.9 A 120 mW @ −1.8 V −1.7 A Applications • Battery Management • Load Switch in PWM • Battery Protection −20 V SIMPLIFIED SCHEMATIC MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Value Unit VDSS −20 V Gate−to−Source Voltage VGS ±8 V Power Dissipation (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 85°C −2.2 ID 0.48 TA = 25°C Source A −3.6 PD (Top View) W MARKING DIAGRAM/ PIN ASSIGNMENT 1.25 t≤5s Pulsed Drain Current −1.6 IDM −10.7 A TJ, Tstg −55 to 150 °C Source Current IS −0.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL tp = 10 ms Operating Junction and Storage Temperature 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Drain 2 Continuous Drain Current (Note 1) Gate 3 Symbol 1 Parameter Drain−to−Source Voltage Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 3 3 Drain 1 TRDMG G 2 SOT−23 CASE 318 STYLE 21 1 1 Gate 2 Source TRD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTR3162PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NTR3162PT3G SOT−23 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification NTR3162P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = −250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V, TJ = 25°C VGS = 0 V, VDS = −16 V, TJ = 85°C −1.0 −5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "8 V $100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −1.0 V Negative Threshold Temperature Coefficient VGS(TH) /TJ Drain−to−Source On−Resistance RDS(on) Parameter Typ Max Units OFF CHARACTERISTICS V 14.5 mV/°C ON CHARACTERISTICS (Note 3) Forward Transconductance −0.3 −0.6 2.5 gFS mV/°C VGS = −4.5 V, ID = −2.2 A 48 70 mW VGS = −2.5 V, ID = −1.9 A 57 95 VGS = −1.8 V, ID = −1.7 A 72 120 VGS = −1.5 V, ID = −1.0 A 88 VDS = −5.0 V, ID = −2.2 A 9.0 S 940 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = −10 V 140 100 nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.7 RG 6.0 W td(on) 8.0 ns Gate Resistance 10.3 0.5 VGS = −4.5 V, VDS = −10 V, ID = −3.6 A 1.4 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) 15 VGS = −4.5 V, VDD = −10 V, ID = −3.6 A, RG = 6 W 31 tf 50 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A, TJ = 25°C 0.7 25 1.2 V ns 8.0 VGS = 0 V, ID = −1.0 A, dISD/dt = 100 A/ms 17 QRR 11 nC 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2