Product specification NTR4502P, NVTR4502P Power MOSFET V(BR)DSS −30 V, −1.95 A, Single, P−Channel, SOT−23 155 mW @ −10 V −30 V Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm) AEC Q101 Qualified − NVTR4502P These Devices are Pb−Free and are RoHS Compliant P−Channel MOSFET S G Applications • • • • D DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera’s, etc. Battery Charging Circuits MARKING DIAGRAM/ PIN ASSIGNMENT Drain 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Drain Current (Note 1) t < 10 s TA = 25°C Symbol Value Unit VDSS −30 V VGS ±20 V ID −1.95 A TA = 70°C Power Dissipation (Note 1) t < 10 s Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C −1.56 1.25 W ID −1.13 A PD 0.4 W tp = 10 ms IDM −6.8 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.25 A Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 300 °C/W Junction−to−Ambient – t = 10 s (Note 1) RqJA 100 Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter SOT−23 CASE 318 STYLE 21 TR2 M G 2 Source 1 Gate = Device Code = Date Code* = Pb−Free Package *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION −0.90 Steady State Pulsed Drain Current TR2 M G G (Note: Microdot may be in either location) PD TA = 70°C −1.95 A 240 mW @ −4.5 V Features • • • • • ID Max (Note 1) RDS(on) TYP Device Package Shipping† NTR4502PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NVTR4502PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). http://www.twtysemi.com [email protected] 1 of 2 Product specification NTR4502P, NVTR4502P Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = −250 mA −30 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = −30 V V TJ = 25°C −1 TJ = 55°C −10 IGSS VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −1.95 A mA ±100 nA −3.0 V 155 200 mW VGS = −4.5 V, ID = −1.5 A 240 350 gFS VDS = −10 V, ID=−1.25 A 3 S Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −15 V 200 pF Output Capacitance COSS 80 Reverse Transfer Capacitance CRSS 50 TY CHARACTERISTICS (Note 3) Forward Transconductance −1.0 CHARGES AND CAPACITANCES VGS = −10 V, VDS = −15 V; ID = −1.95 A 10 nC 5.2 10 ns 12 20 td(OFF) 19 35 tf 17.5 30 −1.2 Total Gate Charge QG(TOT) 6 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS 1 Gate−to−Drain Charge QGD 1.7 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS =−10 V, VDD = −15 V, ID = −1.95 A, RG = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage VSD VGS = 0 V, IS = −1.25 A −0.8 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.25 A 23 V ns 2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 2 of 2