UNITPOWER UD50N03

UD50N03
N-Ch 30V Fast Switching MOSFETs
GeneralDescription
Description
General
Product
Summery
Product
Summery
The UD50N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
30V
ID
RDS(ON)
12mΩ
51A
Applications
Applications
The UD50N03 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
 High Frequency Point-of-Load Synchronous Buck
Converter for MB/NB/UMPC/VGA
 Networking DC-DC Power System
 Load Switch
Features
Features





TO252
PinPin
Configuration
TO252
Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
D
Absolute Maximum Ratings
Absolute Maximum Ratings
G
S
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
51
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
30
A
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
1
11
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V
1
9
A
IDM
Pulsed Drain Current
112
A
EAS
Single Pulse Avalanche Energy
53
mJ
IAS
Avalanche Current
PD@TC=25℃
2
3
22
A
Total Power Dissipation
4
37.5
W
PD@TA=25℃
Total Power Dissipation
4
2.42
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal
Data
Thermal
Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-Ambient
RθJC
Thermal Resistance Junction-Case
1
1
1
Typ.
Max.
Unit
---
62
℃/W
---
4
℃/W
UD50N03
N-Ch 30V Fast Switching MOSFETs
Electrical
℃, unless
ElectricalCharacteristics
Characteristics(T(TJ=25
, unlessotherwise
otherwisenoted)
noted)
J=25
Symbol
BVDSS
Parameter
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.0193
---
V/℃
VGS=10V , ID=30A
---
10
12
mΩ
VGS=4.5V , ID=15A
---
15
18
VGS=VDS , ID =250uA
1.2
1.5
2.5
V
---
-3.97
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
uA
Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
VDS=24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
34
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.8
3.6

Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=15A
---
9.8
13.7
nC
Qgs
Gate-Source Charge
---
4.2
5.88
Qgd
Gate-Drain Charge
---
3.6
5.0
Td(on)
Turn-On Delay Time
---
4
8.0
---
8
14
---
31
62
Tr
Td(off)
Tf
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
Rise Time
Turn-Off Delay Time
Fall Time
ns
---
4
8
---
940
1316
Output Capacitance
---
131
183
Reverse Transfer Capacitance
---
109
153
Min.
Typ.
Max.
Unit
24.6
---
---
mJ
Min.
Typ.
Max.
Unit
Ciss
Input Capacitance
Coss
Crss
VDS=15V , VGS=0V , f=1MHz
pF
Guaranteed Avalanche Characteristics
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Conditions
1,6
VG=VD=0V , Force Current
---
---
43
A
---
---
112
A
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
IF=30A , dI/dt=100A/µs , TJ=25℃
---
8.5
---
nS
---
2.2
---
nC
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,I AS=22A
4.The power dissipation is limited by 175 ℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.
2
UD50N03
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Typical Characteristics
120
20
18
VGS=5V
80
RDSON (mΩ)
ID Drain Current (A)
ID=30A
VGS=10V
VGS=7V
100
VGS=4.5V
60
15
40
VGS=3V
13
20
0
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
10
3
4
Fig.1
Fig.1 Typical
Typical Output
Output Characteristics
Characteristics
6
VGS (V)
8
10
Fig.2
G-S Voltage
Fig.2 On-Resistance
On-Resistance vs.
vs. Gate-Source
12
IS Source Current(A)
10
8
6
TJ=175℃
TJ=25℃
4
2
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
1.2
Fig.4 Gate-Charge Characteristics
Fig.4 Gate-Charge Characteristics
Fig.3
Forward
Characteristics
of Reverse
diode
Fig.3
Forward
Characteristics
of Reverse
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
25
100
TJ ,Junction Temperature ( ℃)
-50
175
25
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
Fig.6 Normalized RDSON
vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
Fig.5 Normalized VGS(th)
vs. TJ
3
175
UD50N03
N-Ch 30V Fast Switching MOSFETs
10000
1000.00
F=1.0MHz
10us
Ciss
1000
100us
10.00
1ms
ID (A)
Capacitance (pF)
100.00
10ms
100ms
DC
1.00
Coss
100
Crss
0.10
TC=25℃
Single Pulse
0.01
10
1
5
9
13
17
VDS Drain to Source Voltage(V)
21
0.1
25
1
10
100
1000
VDS (V)
Fig.7 Capacitance
Fig.7 Capacitance
Fig.8 Safe
Safe Operating
Operating Area
Area
Fig.8
Normalized Thermal Response (R θJC)
1
DUTY=0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P DM
SINGLE
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized
Normalized Maximum
Maximum Transient
Transient Thermal
Thermal Impedance
Impedance
Fig.9
EAS=
VDS
90%
BVDSS
Td(on)
Tr
Ton
Td(off)
BVDSS
BVDSS-VDD
VDD
IAS
10%
VGS
1
L x I AS2 x
2
Tf
VGS
Toff
Fig.11 Unclamped Inductive Switching Waveform
Fig.11 Unclamped Inductive Switching Waveform
Fig.11 Unclamped Inductive Switching Waveform
FFFwaveform
Fig.10 Switching Time Waveform
Fig.10 Switching Time Waveform
4