UM3301 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UM3301 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM3301 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 20mΩ 10A -30V 45mΩ 6A Applications z Power management in half bridge and inverters z DC-DC Converter z Load Switch Features SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM N-Channel P-Channel 30 -30 V ±20 ±20 V 1 10 -6 A 1 6 -4 A 20 -12 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 2 3 EAS Single Pulse Avalanche Energy 72 59 mJ IAS Avalanche Current 21 -19 A 4 PD@TC=25℃ Total Power Dissipation 2.5 2.08 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Max. Unit --- 85 ℃/W --- 50 ℃/W Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 1 1 UM3301 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=10A --- 15 20 VGS=4.5V , ID=8A --- 22 30 1.0 1.5 2.5 V --- -5.8 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=10A --- 10 --- S Rg Gate Resistance VDS=24V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- 7.2 --- Qgs Gate-Source Charge --- 1.4 --- Qgd Gate-Drain Charge --- 2.2 --- Td(on) VDS=20V , VGS=4.5V , ID=10A nC --- 4.1 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 9.8 --- Turn-Off Delay Time ID=5A --- 15.5 --- Fall Time --- 6.0 --- Ciss Input Capacitance --- 550 --- Coss Output Capacitance --- 68 --- Crss Reverse Transfer Capacitance --- 55 --- Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ --- --- 10 A --- --- 20 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM3301 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.085 --- V/℃ VGS=-10V , ID=-6A --- 35 45 VGS=-4.5V , ID=-3A --- 65 85 -1.0 -1.5 -2.5 V --- 0.375 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-6A --- 6 --- S Qg Total Gate Charge (-4.5V) --- 6.4 --- Qgs Gate-Source Charge --- 2.7 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-6A nC --- 9 --- Rise Time VDD=-12V , VGS=-10V , RG=3.3Ω, --- 16.6 --- Turn-Off Delay Time ID=-5A --- 21 --- Fall Time --- 21.6 --- Ciss Input Capacitance --- 645 --- Coss Output Capacitance --- 272 --- Crss Reverse Transfer Capacitance --- 105 --- Min. Typ. Max. Unit 16 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-6A , TJ=25℃ --- --- -6 A --- --- -12 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UM3301 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 27 10 ID=10A VGS=10V VGS=3V 24 VGS=7V VGS=5V 6 RDSON (mΩ) ID Drain Current (A) 8 VGS=4.5V 21 4 18 2 15 0 0 0.5 1 2 1.5 VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 6 10 VDS=20V VGS , Gate to Source Voltage (V) IS -Source Current(A) 8 ID=10A 4.5 6 TJ=150℃ TJ=25℃ 4 3 1.5 2 0 0 0.3 0.6 0 0.9 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 2.5 5 7.5 QG , Total Gate Charge (nC) 10 Fig.4 Gate-charge Characteristics 2.1 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1.5 1.2 1 0.9 0.6 0.6 0.3 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UM3301 N-Ch and P-Ch Fast Switching MOSFETs 100 1000 F=1.0MHz 100 ID (A) 10 Coss Crss 10us 100us 1 10ms 100ms 0 DC TC=25℃ Single Pulse 10 1 5 9 13 17 21 0 25 0.1 VDS Drain to Source Voltage (V) 1 Fig.7 Capacitance 10 VDS (V) 100 Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) Capacitance (pF) Ciss DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 T ON T D = TON/T TJpeak = TC+PDMXRθJC 0.001 0.001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 5 1000 UM3301 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Typical Characteristics 10 144 8 VGS=-10V 117 VGS=-7V 6 RDSON (mΩ) -ID Drain Current (A) ID=-10A VGS=-5V 4 VGS=-4.5V VGS=-3V 63 2 0 0 0.5 1 1.5 90 36 2 2 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 8 10 10 -VGS Gate to Source Voltage (V) 8 -IS Source Current(A) 6 -VGS (V) Fig.2 On-Resistance vs. Gate-Source 10 TJ=150℃ TJ=25℃ 6 4 2 VDS=-20V ID=-6A 8 6 4 2 0 0 0.2 0.4 0.6 0.8 0 1 4 8 12 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 2.0 Normalized On Resistance 1.8 1.4 Normalized -VGS(th) 4 1.5 1 1.0 0.6 0.5 0.2 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 Fig.5 Normalized VGS(th) vs. TJ 25 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 6 175 UM3301 N-Ch and P-Ch Fast Switching MOSFETs 1000 100 F=1.0MHz Ciss Capacitance (pF) 10 100 -ID (A) Coss Crss 100us 1 1ms 10ms 0 100ms DC TC=25℃ Single Pulse 0 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 -VDS (V) 10 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 PDM 0.02 T D = TON/T TJpeak = TC + PDM x RθJC 0.01 SINGLE PULSE 0.01 0.00001 TON 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 7 10