XINDEYI UT4N60F

UT4N60F
N-Ch 600V Fast Switching MOSFETs
General Description
The UT4N60F is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UT4N60F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Product Summery
BVDSS
RDS(ON)
ID
600V
2.2 Ω
4A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
TO220F Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
Dv/Dt
PD
TJ1TSTG
TL
G
Parameter
Drain-source Voltage
Drain current -Continuous (Tc=25℃)
-Continuous (Tc=100℃)
Drain current - pulsed
(Note1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note2)
Peak Diode Recovery Dv/Dt
(Note3)
Power Dissipation (Tc=25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum Lead temperature for soldering
purposes, 1/8" from case for seconds
D
S
TO220F
600
4
2.8
16
±30
8.8
4.5
33
0.26
-55-150
Unites
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
300
℃
Thermal Data
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-case
RθJA
Thermal Resistance, Junction-to-Ambient
1
Type
---
Max
3.8
6.5
Units
℃/W
℃/W
UT4N60F
N-Ch 600V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
2
UT4N60F
N-Ch 600V Fast Switching MOSFETs
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
3
UT4N60F
N-Ch 600V Fast Switching MOSFETs
Gate Charge Test Circuit & Waveform
4
UT4N60F
N-Ch 600V Fast Switching MOSFETs
Gate Charge Test Circuit & Waveform
5