UT4N60F N-Ch 600V Fast Switching MOSFETs General Description The UT4N60F is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UT4N60F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Product Summery BVDSS RDS(ON) ID 600V 2.2 Ω 4A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO220F Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS Dv/Dt PD TJ1TSTG TL G Parameter Drain-source Voltage Drain current -Continuous (Tc=25℃) -Continuous (Tc=100℃) Drain current - pulsed (Note1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note2) Peak Diode Recovery Dv/Dt (Note3) Power Dissipation (Tc=25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum Lead temperature for soldering purposes, 1/8" from case for seconds D S TO220F 600 4 2.8 16 ±30 8.8 4.5 33 0.26 -55-150 Unites V A A A V mJ V/ns W W/℃ ℃ 300 ℃ Thermal Data Symbol Parameter RθJC Thermal Resistance, Junction-to-case RθJA Thermal Resistance, Junction-to-Ambient 1 Type --- Max 3.8 6.5 Units ℃/W ℃/W UT4N60F N-Ch 600V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) 2 UT4N60F N-Ch 600V Fast Switching MOSFETs Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 3 UT4N60F N-Ch 600V Fast Switching MOSFETs Gate Charge Test Circuit & Waveform 4 UT4N60F N-Ch 600V Fast Switching MOSFETs Gate Charge Test Circuit & Waveform 5