WEITRON MJP122

MJP122
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
2.COLLECTOR
3.EMITTER
Features:
TO-251
* High DC current gain
* Electrically similar to popular TIP122
* Built-in a damper diode at E-C
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
IC
5.0
A
PD
20.0
1.5
W
Tj
+150
˚C
Tstg
-55 to +150
˚C
Collector Current
Collector Power Dissipation
@TC=25°C
@TA=25°C
Junction Temperature
Storage Temperature Range
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MJP122
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
BVCBO
100
-
-
V
BVCEO
100
-
-
V
BVEBO
5.0
-
-
V
ICBO
-
-
10
µA
ICEO
-
-
10
µA
IEBO
-
-
2
mA
-
Collector-Base Breakdown Voltage
IC=1mA
Collector-Emitter Breakdown Voltage
IC=30mA
Emitter-Base Breakdown Voltage
IE=3mA
Collector Cutoff Current
VCB=100V
Collector Emitter Cutoff Current
VCE =50V
Emitter Cutoff Current
VEB =5.0V
ON CHARACTERISTICS
DC Current Gain
VCE=4V, IC=4A
VCE=4V, IC=8A
hFE(1)
hFE(2)
1000
100
-
12000
-
VCE(sat)
-
-
2.0
4.0
V
VBE(sat)
-
-
4.5
V
Base-Emitter On Voltage
VCE =4A, IC=4A
V(on)
-
-
2.8
V
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
Cob
-
200
-
pF
Collector-Emitter Saturation Voltage
IC =4A, IB =16mA
IC =8A, IB =80mA
Base-Emitter Saturation Voltage
IC =8A, IB =80mA
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MJP122
Typical Characteristics
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MJP122
TO-251 Outline Dimensions
unit:mm
E
A
G
4
H
B
1
2
Dim
A
B
C
D
E
G
H
J
K
L
M
N
J
3
N
M
K
D
C
L
TO-251
M in
6 .4 0
6 .8 0
0 .5 0
2 .2 0
0 .4 5
1 .0 0
5 .4 0
0 .4 5
0 .9 0
6 .5 0
-
M ax
6 .8 0
7 .2 0
0 .8 0
2 .3 0
2 .5 0
0 .5 5
1 .6 0
5 .8 0
0 .6 9
1 .5 0
0 .9 0
1 . Em it t er
2 . Base
3 . Collect or
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