RoHS MMST3906 D T ,. L TRANSISTOR (PNP) SOT-323 1. BASE 2. EMITTER 1. 25¡ À0. 05 PCM: 0.2 1. 01 REF 3. COLLECTOR W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: -0.2 A Collector-base voltage V(BR) CBO: -40 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage R T Collector cut-off current V(BR)EBO C O 2. 00¡ À0. 05 FEATURES Power dissipation 0. 30 MMST3906 Unit: mm unless otherwise specified) Test O conditions N MIN MAX UNIT Ic= -10µA, IE=0 -40 V Ic= -1mA, IB=0 -40 V IE= -10µA, IC=0 -5 V VCB= -40V, IE=0 -0.1 µA VCE= -40V, IB=0 -0.1 µA IEBO VEB= -5V, IC=0 -0.1 µA hFE(1) VCE=- 1V, IC= -10mA 100 hFE(2) VCE= -1V, IC=- 50mA 60 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5mA -0.95 V ICBO Collector cut-off current C E L Emitter cut-off current DC current gain J E E ICEO Transition frequency fT Output Capacitance Cob W VCE= -20V, IC= -10mA f=100MHz VCB=-5V, IE= 0 f=1MHz Delay time td VCC=-3V, IC=-10mA Rise time tr VBE(off)=-0.5V, IB1=-1mA Storage time tS VCC=-3V, IC=-10mA Fall time tf IB1= IB2= -1mA Marking 300 300 MHz 4.5 pF 35 nS 35 nS 225 nS 75 nS K5N WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]