RoHS PZT3904 PZT3904 FEATURES Power dissipation W (Tamb=25℃) PCM: 1 Collector current A ICM: 0.2 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 1. BASE 2. COLLECTOR 3. EMITTER unless Test V(BR)CBO Ic=10µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 Collector cut-off current ICBO VCB=60V,IE=0 Emitter cut-off current IEBO VEB=5V,IC=0 E Base-emitter saturation voltage J E MIN TYP MAX UNIT 60 V 40 V 6 V 0.1 µA 0.1 µA VCE=10V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat) IC=10mA,IB=1mA 0.2 V VCE(sat) IC=50mA,IB=5mA 0.3 V VBE(sat) IC=10mA,IB=1mA 0.85 V VBE(sat) IC=50mA,IB=5mA 0.95 V fT Collector output capacitance Cob Noise figure NF W O IC N C O specified) hFE(1) C E L Collector-emitter saturation voltage Transition frequency R T otherwise conditions Collector-base breakdown voltage DC current gain D T ,. L SOT-223 TRANSISTOR (NPN) 0.65 VCE=20V,IC=10mA,f=100MHz VCB=5V,IE=0,f=1MHz VCE=5V,Ic=0.1mA, f=10HZ to 15.7KHz,Rg=1KΩ 300 300 MHz 4 pF 5 dB Delay time td VCC=3V, 35 nS Rise time tr IC=10mA,VBE(off)=0.5V,IB1=1mA 35 nS Storage time tS VCC=3V, IC=10mA 200 nS Fall time tf IB1= IB2= 1mA 50 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]