RoHS PZT4401 PZT4401 FEATURES Power dissipation 1. BASE 1 PCM: D T ,. L SOT-223 TRANSISTOR (NPN) W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: 0.6 A Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise N conditions O C O specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 Collector cut-off current ICBO VCB=60V,IE=0 50 nA Emitter cut-off current IEBO VEB=6V,IC=0 50 nA hFE(1) VCE=1V,IC=0.1mA 20 hFE(2) VCE=1V,IC=1mA 40 hFE(3) VCE=1V,IC=10mA 80 hFE(4) VCE=1V,IC=150mA 100 hFE(5) VCE=2V,IC=500mA 40 E Collector-emitter saturation voltage J E R T C E L DC current gain Base-emitter saturation voltage Ic=100µA,IE=0 60 V 40 V 6 V 300 VCE(sat) IC=150mA,IB=15mA 0.4 V VCE(sat) IC=500mA,IB=50mA 0.75 V VBE(sat) IC=150mA,IB=15mA 0.95 V VBE(sat) IC=500mA,IB=50mA 1.2 V Transition frequency fT VCE=10V,IC=20mA,f=100MHz Collector capacitance CC VCB=5V,IE=0,f=1MHz 8 pF Emitter capacitance CE VEB=0.5V,IC=0,f=1MHz 30 pF Delay time td 15 nS Rise time tr VCC=29.5V, IC=150mA 20 nS Storage time tS VBB=3.5V,IB1=- IB2=15mA 200 nS Fall time tf 60 nS W WEJ ELECTRONIC CO. Http:// www.wej.cn 200 MHz E-mail:[email protected]