DINTEK DTS03K16

DTS,
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N-Channel16 −V (D−S) MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS
Min (V)
16
D TrenchFETr Power MOSFET
ID (A)
rDS(on)
DS( )
Max (W)
VGS(th) (V)
1.0 @ VGS = 10 V
DTS03K16 DTS03K16A
1 0 to 3
1.0
3.0
0
1.4 @ VGS = 4.5 V
0.42
0.64
0.35
0.53
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
G
D
1
3
S
D
G
2
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Symbol
DTS03K16
DTS03K16A
Drain-Source Voltage
VDS
16
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)
TA= 25_C
TA= 70_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
ID
IDM
TA= 25_C
TA= 70_C
PD
RthJA
TJ, Tstg
V
0.42
0.64
0.33
0.51
0.8
1.5
0.35
0.8
0.22
0.51
357
156
−55 to 150
Unit
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
1
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SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 10 mA
16
VGS(th)
VDS = VGS, ID = 0.25 mA
1.0
2.0
3.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 55_C
10
On State Drain Currenta
On-State
ID(on)
D( )
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistancea
VDS = 10 V
V, VGS = 8
10VV
Diode Forward Voltage
0.5
DTS03K16A
0.8
nA
mA
A
VGS = 4.5 V, ID = 0.1 A
0.8
1.4
VGS = 10 V, ID = 0.3 A
0.47
1.0
gfs
VDS = 10 V, ID = 0.3 A
550
VSD
IS = 0.3 A, VGS = 0 V
0.85
1.2
1000
1500
rDS(on)
Forward Transconductancea
DTS03K16
V
W
mS
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
200
Gate Resistance
Rg
48
VDS = 16 V, VGS = 10 V
ID ^ 0.3 A
205
td(on)
On Time
Turn-On
Turn
VDD = 15 V, RL = 50 W
ID ^ 0
0.3
3A
A, VGEN = 10 V
RG = 6 W
tr
td(off)
Turn-Off Time
tf
pC
W
4.5
8
8
15
9
15
6.3
12
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0
0.8
VGS = 10 thru 5 V
0.7
4V
0.8
I D − Drain Current (A)
I D − Drain Current (A)
0.6
0.5
0.4
0.3
0.2
3V
0.6
0.4
TJ = 125_C
0.2
0.1
0.0
0.0
25_C
2V
0.4
0.8
1.2
1.6
VDS − Drain-to-Source Voltage (V)
2
−55_C
0.0
2.0
0
1
2
3
4
VGS − Gate-to-Source Voltage (V)
5
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
50
1.2
40
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
On-Resistance vs. Drain Current
1.5
VGS = 4.5 V
0.9
VGS = 8 V
0.6
0.3
0.0
0.0
Ciss
30
Coss
20
Crss
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.8
ID − Drain Current (A)
Gate Charge
20
On-Resistance vs. Junction Temperature
VDS = 16 V
ID = 0.3 A
r DS(on) − On-Resistance ( W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
16
1.6
8
6
4
2
VGS = 8 V
ID = 0.3 A
1.4
1.2
VGS = 4.5 V
ID = 0.1 A
1.0
0.8
0
0.0
0.4
0.2
0.6
0.8
0.6
−50
1.0
−25
0
Qg − Total Gate Charge (nC)
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
3
1
TJ = 150_C
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
12
VDS − Drain-to-Source Voltage (V)
10
0.1
0.01
0.001
0.0
8
4
TJ = 25_C
2.0
1.6
ID = 0.3 A
1.2
0.8
0.4
0.0
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
1.2
1.4
0
4
8
12
14
16
VGS − Gate-to-Source Voltage (V)
3
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
V GS(th) Variance (V)
0.2
ID = 250 mA
−0.0
−0.2
−0.4
−0.6
−50
−25
0
25
50
75
100
125
150
TJ − Temperature (_C)
Safe Operating Area (TO-236, DTS03K16 Only)
Safe Operating Area (TO-226AA, DTS03K16A Only)
10
10
IDM
Limited
rDS(on) Limited
rDS(on) Limited
10 ms
0.1
ID(on)
Limited
100 ms
1s
10 s
dc
TA = 25_C
Single Pulse
0.01
BVDSS Limited
0.001
0.1
1
1 ms
1
1 ms
I D − Drain Current (A)
I D − Drain Current (A)
1
IDM
Limited
0.1
0.01
10 ms
ID(on)
Limited
10
100
1s
dc
TA = 25_C
Single Pulse
BVDSS Limited
0.001
0.1
VDS − Drain-to-Source Voltage (V)
100 ms
10 s
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, DTS03K16 Only)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, DTS03K16A Only)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
5
Package Information
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
INCHES
Min
Max
Min
Max
A
0.89
1.12
0.035
0.044
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
www.GD\VHPLMS
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Application Note
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
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