DTS, www.daysemi.jp N-Channel16 −V (D−S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 16 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V DTS03K16 DTS03K16A 1 0 to 3 1.0 3.0 0 1.4 @ VGS = 4.5 V 0.42 0.64 0.35 0.53 APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) G D 1 3 S D G 2 S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit Parameter Symbol DTS03K16 DTS03K16A Drain-Source Voltage VDS 16 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 70_C PD RthJA TJ, Tstg V 0.42 0.64 0.33 0.51 0.8 1.5 0.35 0.8 0.22 0.51 357 156 −55 to 150 Unit A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. 1 DTS, www.daysemi.jp SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 mA 16 VGS(th) VDS = VGS, ID = 0.25 mA 1.0 2.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 55_C 10 On State Drain Currenta On-State ID(on) D( ) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea VDS = 10 V V, VGS = 8 10VV Diode Forward Voltage 0.5 DTS03K16A 0.8 nA mA A VGS = 4.5 V, ID = 0.1 A 0.8 1.4 VGS = 10 V, ID = 0.3 A 0.47 1.0 gfs VDS = 10 V, ID = 0.3 A 550 VSD IS = 0.3 A, VGS = 0 V 0.85 1.2 1000 1500 rDS(on) Forward Transconductancea DTS03K16 V W mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 200 Gate Resistance Rg 48 VDS = 16 V, VGS = 10 V ID ^ 0.3 A 205 td(on) On Time Turn-On Turn VDD = 15 V, RL = 50 W ID ^ 0 0.3 3A A, VGEN = 10 V RG = 6 W tr td(off) Turn-Off Time tf pC W 4.5 8 8 15 9 15 6.3 12 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.0 0.8 VGS = 10 thru 5 V 0.7 4V 0.8 I D − Drain Current (A) I D − Drain Current (A) 0.6 0.5 0.4 0.3 0.2 3V 0.6 0.4 TJ = 125_C 0.2 0.1 0.0 0.0 25_C 2V 0.4 0.8 1.2 1.6 VDS − Drain-to-Source Voltage (V) 2 −55_C 0.0 2.0 0 1 2 3 4 VGS − Gate-to-Source Voltage (V) 5 DTS, www.daysemi.jp TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 50 1.2 40 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 1.5 VGS = 4.5 V 0.9 VGS = 8 V 0.6 0.3 0.0 0.0 Ciss 30 Coss 20 Crss 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 16 V ID = 0.3 A r DS(on) − On-Resistance ( W) (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 8 6 4 2 VGS = 8 V ID = 0.3 A 1.4 1.2 VGS = 4.5 V ID = 0.1 A 1.0 0.8 0 0.0 0.4 0.2 0.6 0.8 0.6 −50 1.0 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 3 1 TJ = 150_C r DS(on) − On-Resistance ( W ) I S − Source Current (A) 12 VDS − Drain-to-Source Voltage (V) 10 0.1 0.01 0.001 0.0 8 4 TJ = 25_C 2.0 1.6 ID = 0.3 A 1.2 0.8 0.4 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) 1.2 1.4 0 4 8 12 14 16 VGS − Gate-to-Source Voltage (V) 3 DTS, www.daysemi.jp TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 V GS(th) Variance (V) 0.2 ID = 250 mA −0.0 −0.2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Safe Operating Area (TO-236, DTS03K16 Only) Safe Operating Area (TO-226AA, DTS03K16A Only) 10 10 IDM Limited rDS(on) Limited rDS(on) Limited 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s dc TA = 25_C Single Pulse 0.01 BVDSS Limited 0.001 0.1 1 1 ms 1 1 ms I D − Drain Current (A) I D − Drain Current (A) 1 IDM Limited 0.1 0.01 10 ms ID(on) Limited 10 100 1s dc TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 VDS − Drain-to-Source Voltage (V) 100 ms 10 s 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, DTS03K16 Only) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 DTS, www.daysemi.jp TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, DTS03K16A Only) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 5 Package Information SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 www.GD\VHPLMS 1 Application Note 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE www.daysemi.jp 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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