http://www.fujielectric.com/products/semiconductor/ 2MBI800U4G-120 IGBT Modules IGBT MODULE (U series) 1200V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) M6 Screw torque M8 Terminals (*3) M4 Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 1200 800 2400 1600 800 1600 4800 150 -40 ~ +125 4000 5.75 10 2.5 Units V V A W °C VAC Nm Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : Mounting 4.25~5.75 Nm (M6) Note *3: Recommendable Value : Main Terminals 8~10 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 800mA Collector-Emitter saturation voltage Input capacitance Turn-on Turn-off Forward on voltage Reverse recovery Lead resistance, terminal-chip VGE = 15V IC = 800A VCE = 10V, VGE = 0V, f = 1MHz RG on = 5.6Ω VCC = 600V RG off = 1.5Ω IC = 800A VGE = ±15V Tj = 125ºC VGE = 0V IF = 800A IF = 800A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 1.0 1600 5.5 6.5 7.5 2.12 2.29 2.32 1.90 2.05 2.10 90 1.35 0.65 0.80 0.20 1.87 2.04 1.97 1.65 1.80 1.75 0.45 0.27 Characteristics min. typ. max. 0.026 0.045 0.006 - Units mA nA V V nF µs V µs mΩ Units °C/W 2MBI800U4G-120 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25ºC,chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C, chip 1800 1800 VGE=20V 12V VGE=20V 1600 1400 Collector current : Ic [A] 1200 1000 10V 800 600 400 12V 1400 1200 1000 10V 800 600 400 200 200 8V 0 0.0 1.0 2.0 3.0 4.0 8V 0 0.0 5.0 1.0 Collector-Emitter voltage : VCE [V] 3.0 4.0 5.0 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25ºC,chip 10 1800 Tj=125°C Collector - Emitter voltage : VCE [ V ] Tj=25°C 1600 Collector current : Ic [A] 2.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip 1400 1200 1000 800 600 400 200 8 6 4 Ic=1600A Ic=800A Ic=400A 2 0 0 0 1 2 3 4 5 5 10 15 20 Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) VCC=600V, IC=800A, Tj= 25°C 1000 Collector-Emitter voltage : VCE[V] 1000 Cies 100 10 Cres Coes 25 800 20 VGE VCE 600 15 400 10 200 5 0 1 0 10 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 15V 0 30 1000 2000 3000 Gate charge : Qg [ nC ] Collector-Emitter voltage : VCE [V] 2 0 4000 Gate-Emitter voltage:VGE[V] Collector current : Ic [A] 1600 15V 2MBI800U4G-120 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Vcc=600V, VGE=±15V, RGon=5.6Ω, RGoff=1.5Ω, Tj= 125°C Vcc=600V, Ic=800A,VGE=±15V, Tj= 125°C 6.0 1.6 Switching time : ton, tr, to tf [ us ] Switching time : ton, tr, toff, tf [ us ] 1.8 1.4 1.2 ton 1.0 toff 0.8 0.6 0.4 tf 0.2 tr ton 5.0 4.0 3.0 tr 2.0 toff 1.0 tf 0.0 0.0 0 200 400 600 800 1000 1200 0 1400 4 Switching loss vs. Collector current (typ.) Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eoff 250 200 Eon Err 50 24 28 700 Eon 600 500 400 Eoff 300 200 100 Err 0 0 0 0 200 400 600 800 1000 1200 1400 Collector current : Ic [ A ] , Forward current : IF [ A ] Reverse bias safe operating area (max.) ± VGE=15V ,Tj = 125°C / chip 1800 1600 Collector current : Ic [ A ] 20 Vcc=600V, Ic=800A,VGE=±15V, Tj= 125°C 350 100 16 Switching loss vs. Gate resistance (typ.) Vcc=600V, VGE=±15V, RGon=5.6Ω, RGoff=1.5Ω, Tj= 125°C 150 12 Gate resistance : RG [ Ω ] Collector current : Ic [ A ] 300 8 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 3 4 8 12 16 20 Gate resistance : RG [ Ω ] 24 28 2MBI800U4G-120 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) chip Vcc=600V, VGE=±15V, RGon=5.6Ω, Tj=125°C Tj=25ºC Forward current : IF [ A ] 1600 Reverse recovery current : Irr [ A ] 600 Tj=125ºC 1400 1200 1000 800 600 400 200 0 0.0 1.0 2.0 3.0 4.0 Irr 500 0.100 FWD IGBT 0.010 0.010 0.100 1.000 Pulse width : PW [ sec ] 4 1.1 1.0 450 0.9 400 0.8 350 0.7 300 trr 250 0.6 0.5 200 0.4 150 0.3 100 0.2 50 0.1 0 Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [ °C/W ] 550 0 Forward on voltage : VF [ V ] 0.001 0.001 1.2 200 400 600 800 1000 1200 Forward current : IF [ A ] 0.0 1400 Reverse recovery time : trr [us] 1800 2MBI800U4G-120 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic main emitter main collector sense emitter sense collector gate gate sense emitter sense collector main collector main emitter 5 2MBI800U4G-120 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. 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It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. 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