2SB624 TRANSISTOR(PNP) SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700 mA PD Total Device Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN TYP MAX UNIT -30 V IC= -1mA, IB=0 -25 V IE= -100μA, IC=0 -5 V IE=0 Collector cut-off current ICBO VCB=-30 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V , -0.1 μA hFE(1)* VCE= -1V, IC= -100mA 110 hFE(2)* VCE=-1V, IC= -700mA 50 DC current gain IC=0 Collector-emitter saturation voltage VCE(sat) * IC=-700 mA, IB= -70mA Base-emitter voltage VBE* VCE=-6V, IC=-10mA Transition frequency fT VCE= -6V, Cob Collector Output Capacitance 400 -0.6 -0.6 V -0.7 V IC= -10mA 160 MHz VCB=-6V,IE=0,f=1MHZ 17 pF * Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. CLASSIFICATION OF hFE(1) Marking Range BV1 BV2 BV3 BV4 BV5 110-180 135-220 170-270 200-320 250-400 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB624 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５