DSEP2x31-06A V RRM = 600 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x31-06A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved max. Unit V VR = 600 V 250 µA VR = 600 V TVJ = 150 °C 1 mA IF = 30 A TVJ = 25 °C 1.58 V IF = 60 A 1.88 V IF = 30 A IF = 60 A rectangular TVJ = 150 °C d = 0.5 1.23 V 1.48 V TC = 95°C 30 A TVJ = 150°C 0.98 V 8.2 mΩ 1.15 K/W 150 °C TC = 25 °C 100 W TVJ = 45°C 250 A -40 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 600 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 30 A; VR = 300 V -di F /dt = 400 A/µs VR = 400 V; f = 1 MHz TVJ = 25 °C 12 A TVJ = 100°C 20 A TVJ = 25 °C 30 ns TVJ = 100°C 90 ns TVJ = 25 °C 26 pF Data according to IEC 60747and per diode unless otherwise specified 20100531a DSEP2x31-06A Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 °C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSEP2x31-06A Similar Part DSEP2x31-06B IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Marking on Product DSEP2x31-06A Package SOT-227B (minibloc) Delivering Mode Tube Base Qty Code Key 10 473928 Voltage Class 600 Data according to IEC 60747and per diode unless otherwise specified 20100531a DSEP2x31-06A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100531a DSEP2x31-06A 3000 70 60 50 TVJ = 100°C TVJ = 100°C VR = 300 V 2500 VR = 300 V 40 50 IF = 60 A 2000 IF 40 Qr TVJ = 150°C IF = 60 A 1500 100°C 25°C [A] 30 30 30 A 15 A [nC] [A] 1000 20 0 0.0 0.5 1.0 1.5 0 10 0 2.0 0 1000 VF [V] 0 200 -diF /dt [A/µs] Fig. 1 Forward current IF vs. VF 130 IF = 60 A 110 30 A 15 A IRM 1000 20 1.2 15 0.9 VFR trr TVJ = 100°C 10 100 [ns] 800 VR = 300 V 1.5 Kf 1.0 600 Fig. 3 Peak reverse current IRM versus -diF /dt TVJ = 100°C 120 trr 400 -diF /dt [A/µs] Fig. 2 Reverse recovery charge Qr versus -diF /dt 2.0 0.5 20 10 500 10 30 A 15 A IRM 0.6 IF = 30 A [V] [µs] 90 5 0.3 VFR 80 tfr Qr 0.0 70 0 40 80 120 160 0 0 200 400 TVJ [°C] 600 800 1000 0 200 400 800 0.0 1000 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 Fig. 6 Peak forward voltage VFR and tfr versus diF /dt Fig. 5 Recovery time trr versus -diF /dt 2 1 Constants for ZthJC calculation: 0.1 i ZthJC [K/W] 0.01 0.001 0.0001 Rthi (K/W) ti (s) 1 0.436 0.0055 2 0.482 0.0092 3 0.117 0.0007 4 0.115 0.0418 DSEP 2x31-06A 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100531a