AO4402 20V N-Channel MOSFET General Description The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 20V 20A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 5.5mΩ RDS(ON) (at VGS=2.5V) < 7mΩ SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current C ±12 V 16 IDM A 140 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 162 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 20 ID TA=70°C Maximum 20 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4402 20V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 TJ=55°C 5 100 nA 1.6 V 4.6 5.5 5.8 7 VGS=2.5V, ID=18A 5.5 7 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge µA 1 VGS=4.5V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=10V, ID=20A mΩ mΩ S 1 V 4 A 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 nC 7 9 11 nC 7 12 17 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 7 ns 8 ns 70 ns 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.Maximum avalanche current limited by tester capability. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/6 www.freescale.net.cn AO4402 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 VDS=5V 80 60 ID(A) ID (A) 60 40 40 125°C 20 0 0 0 1 2 3 4 0.5 5 10 Normalized On-Resistance VGS=2.5V RDS(ON) (mΩ ) 1.5 2 2.5 1.4 8 6 4 VGS=4.5V 2 1.2 17 5 2 10 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 0 18 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 1.0E+02 ID=20A 9 1.0E+01 40 1.0E+00 8 7 IS (A) RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 6 1.0E-02 5 1.0E-03 1.0E-04 4 25°C 1.0E-05 3 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 25°C 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4402 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) 6000 VDS=10V ID=20A 8 6 4 2 5000 4000 3000 2000 Coss 1000 Crss 0 0 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1000.0 100.0 ID (Amps) IAR (A) Peak Avalanche Current 5 100.0 10.0 1.0 10ms 0.1 0.0 10.0 0.01 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 100 VDS (Volts) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4402 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4402 20V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn