AO4240 40V N-Channel MOSFET General Description The AO4240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of R DS(ON) and Crss. In addition,switching behavior is wellcontrolled with a "Schottky style" soft recovery body diode. Features VDS 40V ID (at VGS=10V) 24A RDS(ON) (at VGS=10V) < 3.3mΩ RDS(ON) (at VGS=4.5V) < 4.3mΩ SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C ±20 V 19 A 170 IDM Avalanche Current C IAS 75 A Avalanche energy L=0.1mH C TA=25°C EAS 281 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 24 ID TA=70°C Maximum 40 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4240 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 170 TJ=55°C 5 100 nA 2.3 V 2.7 3.3 4 4.9 VGS=4.5V, ID=20A 3.4 4.3 mΩ 90 1 V 4.5 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance A 0.67 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA 1.7 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz mΩ S 4245 pF 1170 pF 69 pF 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 87 nC Qg(4.5V) Total Gate Charge 28 40 Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 0.5 nC 8 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 74 VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω nC 10.5 9 ns 11.5 ns 42 ns 21 ns 23 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/6 www.freescale.net.cn AO4240 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 80 80 10V 60 ID(A) ID (A) 60 3V 125°C 40 40 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 6 2 3 4 5 6 Normalized On-Resistance 1.8 5 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=4.5V 3 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 17 5 2 VGS=4.5V10 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 8 1.0E+02 ID=20A 1.0E+01 40 125°C 4 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 6 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4240 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=20V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 Coss 2000 1000 0 Crss 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 1000 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 1000.0 TA=100°C TA=25°C 100 TA=150°C TA=125°C 100.0 ID (Amps) IAR (A) Peak Avalanche Current Ciss RDS(ON) limited 10µs 10.0 100µs 1.0 10 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4240 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4240 40V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn