SHENZHENFREESCALE AO4830

AO4830
80V Dual N-channel MOSFET
General Description
The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This
device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 80V
ID = 3.5A
RDS(ON) < 75mΩ
(VGS = 10V)
(VGS = 10V)
SOIC-8
D1
D2
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
TA=25°C
Power Dissipation B
TA=70°C
C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
1/6
Units
V
±30
V
A
2.9
IDM
18
IAR
16
A
EAR
12.8
mJ
2
PD
Junction and Storage Temperature Range
Maximum
80
3.5
ID
Pulsed Drain Current C
S2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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AO4830
80V Dual N-channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±30V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
3.5
VGS=10V, VDS=5V
18
TJ=55°C
gFS
Forward Transconductance
VDS=5V, ID=3.5A
IS=1A,VGS=0V
TJ=125°C
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
ISM
Pulsed Body-diode Current
100
nA
4.2
5
V
62
75
113.0
135
A
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
0.77
1
V
2.5
A
18
A
510
640
770
pF
28
40
52
pF
12
20
30
pF
0.9
1.8
2.7
Ω
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8
11
13
Qg(4.5V) Total Gate Charge
4
5.5
7
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=40V, ID=3.5A
4
5
6
nC
0.7
1.2
1.7
nC
VGS=10V, VDS=40V, RL=8Ω,
RGEN=3Ω
IF=3.5A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs
mΩ
15
C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
5
VGS=10V, ID=3.5A
Static Drain-Source On-Resistance
Units
1
Zero Gate Voltage Drain Current
RDS(ON)
Max
80
VDS=80V, VGS=0V
IDSS
ID(ON)
Typ
7.2
ns
2.2
ns
17
ns
2
ns
14
20
26
35
50
65
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2/6
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AO4830
80V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
7V
16
16
6V
12
ID(A)
ID (A)
12
8
8
125°C
5.5V
4
4
25°C
5V
0
0
0
1
2
3
4
3
5
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
Normalized On-Resistance
RDS(ON) (mΩ )
6
7
2.2
90
80
70
VGS=10V
60
2
VGS=10V
ID=3.5A
1.8
1.6
17
5
2
10
1.4
1.2
1
0.8
50
0
4
8
12
16
0
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
150
1.0E+02
ID=3.5A
1.0E+01
130
40
1.0E+00
125°C
125°C
110
IS (A)
RDS(ON) (mΩ )
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.0E-01
1.0E-02
90
25°C
1.0E-03
70
25°C
1.0E-04
1.0E-05
50
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4830
80V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=40V
ID=3.5A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
Coss
200
2
Crss
0
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
40
60
VDS (Volts)
Figure 8: Capacitance Characteristics
80
100.0
100
ID(A), Peak Avalanche Current
0
12
TA=25°C
TA=100°C
10
TA=150°C
1
0.000001
0.00001
TA=125°C
10ms
100ms
0.0001
ID (Amps)
10.0
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
100m
DC
10s
0.0
0.1
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
4/6
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AO4830
80V Dual N-channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
1
0.1
PD
Single Pulse
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
5/6
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AO4830
80V Dual N-channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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