AO4830 80V Dual N-channel MOSFET General Description The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 80V ID = 3.5A RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) SOIC-8 D1 D2 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead 1/6 Units V ±30 V A 2.9 IDM 18 IAR 16 A EAR 12.8 mJ 2 PD Junction and Storage Temperature Range Maximum 80 3.5 ID Pulsed Drain Current C S2 -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4830 80V Dual N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min ID=250µA, VGS=0V V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 3.5 VGS=10V, VDS=5V 18 TJ=55°C gFS Forward Transconductance VDS=5V, ID=3.5A IS=1A,VGS=0V TJ=125°C VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current ISM Pulsed Body-diode Current 100 nA 4.2 5 V 62 75 113.0 135 A Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 0.77 1 V 2.5 A 18 A 510 640 770 pF 28 40 52 pF 12 20 30 pF 0.9 1.8 2.7 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 11 13 Qg(4.5V) Total Gate Charge 4 5.5 7 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=40V, ID=3.5A 4 5 6 nC 0.7 1.2 1.7 nC VGS=10V, VDS=40V, RL=8Ω, RGEN=3Ω IF=3.5A, dI/dt=300A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=300A/µs mΩ 15 C DYNAMIC PARAMETERS Ciss Input Capacitance µA 5 VGS=10V, ID=3.5A Static Drain-Source On-Resistance Units 1 Zero Gate Voltage Drain Current RDS(ON) Max 80 VDS=80V, VGS=0V IDSS ID(ON) Typ 7.2 ns 2.2 ns 17 ns 2 ns 14 20 26 35 50 65 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2/6 www.freescale.net.cn AO4830 80V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 7V 16 16 6V 12 ID(A) ID (A) 12 8 8 125°C 5.5V 4 4 25°C 5V 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance RDS(ON) (mΩ ) 6 7 2.2 90 80 70 VGS=10V 60 2 VGS=10V ID=3.5A 1.8 1.6 17 5 2 10 1.4 1.2 1 0.8 50 0 4 8 12 16 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 150 1.0E+02 ID=3.5A 1.0E+01 130 40 1.0E+00 125°C 125°C 110 IS (A) RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.0E-01 1.0E-02 90 25°C 1.0E-03 70 25°C 1.0E-04 1.0E-05 50 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4830 80V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=40V ID=3.5A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 200 2 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 100.0 100 ID(A), Peak Avalanche Current 0 12 TA=25°C TA=100°C 10 TA=150°C 1 0.000001 0.00001 TA=125°C 10ms 100ms 0.0001 ID (Amps) 10.0 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 100m DC 10s 0.0 0.1 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C Power (W) 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4830 80V Dual N-channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 1 0.1 PD Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4830 80V Dual N-channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn